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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure
Nour El Islam Boukortt, Trupti Ranjan Lenka, Salvatore Patanè, et al.
Electronics (2021) Vol. 11, Iss. 1, pp. 91-91
Open Access | Times Cited: 24

Showing 24 citing articles:

Investigation of Self‐Heating Effect in Inverters: Structural Design and Optimization Design of 14 nm Silicon‐on‐Insulator Fin Field‐Effect Transistor
Zhaohui Qin, Lan Chen, Renjie Lu, et al.
physica status solidi (a) (2025)
Closed Access
Impact of Variability on Novel Transistor Configurations in Adder Circuits at 7nm FinFET Technology
Umayia Mushtaq, M. W. Akram, Dinesh Prasad, et al.
Journal of Circuits Systems and Computers (2024) Vol. 33, Iss. 13
Closed Access | Times Cited: 3
A review on effect of various high-k dielectric materials on the performance of FinFET device
J Naveen Ananda Kumar, Shilpi Birla, Garima Agarwal
Materials Today Proceedings (2022) Vol. 79, pp. 297-302
Closed Access | Times Cited: 18
Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier
Jami Venkata Suman, Kusma Kumari Cheepurupalli, A. Haiter Lenin
International Journal of Polymer Science (2022) Vol. 2022, pp. 1-12
Open Access | Times Cited: 12
Review of the Nanoscale FinFET Device for the Applications in Nano-regime
Shams Ul Haq, Vijay Kumar Sharma
Current Nanoscience (2022) Vol. 19, Iss. 5, pp. 651-662
Closed Access | Times Cited: 12
Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications
Rajan Singh, G. Purnachandra Rao, Trupti Ranjan Lenka, et al.
International Journal of Numerical Modelling Electronic Networks Devices and Fields (2023) Vol. 37, Iss. 1
Closed Access | Times Cited: 5
FinFET-Based Low-Power Improved PDP 4:2 Approximate Compressor Design
Shams Ul Haq, Vijay Kumar Sharma
Journal of Circuits Systems and Computers (2024) Vol. 33, Iss. 14
Closed Access | Times Cited: 1
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*
Zhaohui Qin, Lan Chen, Renjie Lu, et al.
Semiconductor Science and Technology (2024) Vol. 39, Iss. 9, pp. 095008-095008
Closed Access | Times Cited: 1
Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
Koosha Karimi, Ali Fardoost, Mehdi Javanmard
Micromachines (2024) Vol. 15, Iss. 10, pp. 1187-1187
Open Access | Times Cited: 1
Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies
Sumit Choudhary, Midathala Yogesh, Daniel Schwarz, et al.
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2023) Vol. 41, Iss. 5
Closed Access | Times Cited: 3
Reliable and ultra-low power approach for designing of logic circuits
Shams Ul Haq, Vijay Kumar Sharma
Analog Integrated Circuits and Signal Processing (2023) Vol. 119, Iss. 1, pp. 85-95
Closed Access | Times Cited: 3
Impact & Analysis of Inverted-T shaped Fin on the Performance parameters of 14-nm heterojunction FinFET
Shekhar Verma, Suman Lata Tripathi
Silicon (2022) Vol. 14, Iss. 15, pp. 9441-9451
Closed Access | Times Cited: 5
DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric
Doğan Yılmaz, Oğuz Odabaşı, Gurur Salkım, et al.
Semiconductor Science and Technology (2022) Vol. 37, Iss. 8, pp. 085008-085008
Open Access | Times Cited: 4
Failure Probability due to Radiation-Induced Effects in FinFET SRAM Cells under Process Variations
Victor Champac, Hector Villacorta, R. Gómez-Fuentes, et al.
Journal of Electronic Testing (2024) Vol. 40, Iss. 1, pp. 75-86
Closed Access
Detection of defective FinFET logic ICs by using FFTs
W. Widianto, Robert Lis, Inda Rusdia Sofiani, et al.
AIP conference proceedings (2024)
Open Access
Effect of Various Structure Parameters on Electrical Characteristics of Double Gate FinFET
S.P.S. Saini, Hitender Kumar Tyagi
Lecture notes in networks and systems (2024), pp. 337-345
Closed Access
Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET
Priyanka Agrwal, Ajay Kumar
(2024), pp. 478-482
Closed Access
Design and Analysis of Ultra-low Power Voltage Controlled Oscillator in Nanoscale Technologies
Priyanka kumari B.S, Sobhit Saxena
International Journal of Electrical and Electronics Research (2024) Vol. 12, Iss. 1, pp. 12-19
Open Access
The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf0.5Zr0.5O2 Ferroelectric FinFET
Wenqi Zhang, Po-Tang Wu, Yuheng Lin, et al.
Crystals (2023) Vol. 13, Iss. 4, pp. 628-628
Open Access | Times Cited: 1
Integration of high bandwidth material engineering in the development of a futuristic gate FET: A Comparison study
Tejaswini Sahoo, Prasanna Kumar Sahu, Annada Shankar Lenka
2022 IEEE IAS Global Conference on Emerging Technologies (GlobConET) (2023), pp. 1-5
Closed Access | Times Cited: 1
Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations
Victor Champac, Hector Villacorta, R. Gómez-Fuentes, et al.
(2022) Vol. 11, pp. 1-6
Closed Access | Times Cited: 1
Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks
Yu-Lin Chen, Wen‐Kuan Yeh, Heng‐Tung Hsu, et al.
ECS Journal of Solid State Science and Technology (2023) Vol. 12, Iss. 3, pp. 035007-035007
Closed Access
Temperature analysis of TG FinFET on electrical, RF and distortion parameters for wireless applications
Mohd Umer Ansari, Pulkit Jha, Manan Sharma, et al.
Engineering Research Express (2023) Vol. 5, Iss. 4, pp. 045006-045006
Open Access
A Quantitative Comparison Between the Electrical Characteristics of Vertical Super Thin Body (VSTB) FET and Silicon on Insulator Vertical Super-Thin Body (SOI VSTB) FET
Vikas Kumar, Radhe Gobinda Debnath, Srimanta Baishya
Silicon (2022) Vol. 15, Iss. 7, pp. 3083-3090
Closed Access
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