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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
Ewelina Nowak, Edyta Chłopocka, Mirosław Szybowicz
Crystals (2023) Vol. 13, Iss. 3, pp. 416-416
Open Access | Times Cited: 22

Showing 22 citing articles:

Synthesis and Characterizations of Fe-Doped NiO Nanoparticles and Their Potential Photocatalytic Dye Degradation Activities
Sivalingam Minisha, Jerald B. Johnson, Saikh Mohammad Wabaidur, et al.
Sustainability (2023) Vol. 15, Iss. 19, pp. 14552-14552
Open Access | Times Cited: 25
Ferroelectric MXene-assisted BiFeO3 based free-standing memristors for multifunctional non-volatile memory storage
Kubra Sattar, Rabia Tahir, Houbing Huang, et al.
Carbon (2024) Vol. 221, pp. 118931-118931
Closed Access | Times Cited: 11
Spinel ferrites for resistive random access memory applications
Ketankumar Gayakvad, Kaushik Somdatta, V. L. Mathe, et al.
Emergent Materials (2023) Vol. 7, Iss. 1, pp. 103-131
Open Access | Times Cited: 13
High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure
Dongsheng Cui, Zhenhua Lin, Mengyang Kang, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 12
Open Access | Times Cited: 5
Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing
Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah, et al.
Journal of Materials Science Materials in Electronics (2024) Vol. 35, Iss. 16
Closed Access | Times Cited: 5
The time dependence of electrical current of Ar ion-etched ZnO
Cong Liu
AIP Advances (2025) Vol. 15, Iss. 2
Open Access
Surface-Modified TiO2 Nanorods Using Oxygen Plasma for Optical Synaptic Performance and Neuromorphic Computing Applications
A. Sharon, P. S. Subin, G. Arun, et al.
Surfaces and Interfaces (2025), pp. 106357-106357
Closed Access
Site-Selective Nanowire Synthesis and Fabrication of Printed Memristor Arrays with Ultralow Switching Voltages on Flexible Substrate
Luca De Pamphilis, Sihang Ma, Abhishek Singh Dahiya, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 44, pp. 60394-60403
Open Access | Times Cited: 3
Improvement of capacitive and resistive memory in WO3 thin film with annealing
Rajshree Rajkumari, Mir Waqas Alam, Basma Souayeh, et al.
Journal of Materials Science (2024) Vol. 59, Iss. 8, pp. 3270-3283
Closed Access | Times Cited: 2
Border Trap-Enhanced Ga2O3 Nonvolatile Optoelectronic Memory
Yonghui Zhang, Rui Zhu, Wenxing Huo, et al.
Nano Letters (2024) Vol. 24, Iss. 45, pp. 14398-14404
Closed Access | Times Cited: 2
2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems
Hyojung Kim, Daijoon Hyun, Muhammad Hilal, et al.
Electronics (2024) Vol. 13, Iss. 17, pp. 3572-3572
Open Access | Times Cited: 1
Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor
Akendra Singh Chabungbam, Dong‐Eun Kim, Yue Wang, et al.
Applied Surface Science Advances (2024) Vol. 25, pp. 100675-100675
Open Access | Times Cited: 1
Support Vector Regression Model for Determining Optimal Parameters of HfAlO-Based Charge Trapping Memory Devices
Yifan Hu, Fucheng Wang, Jingwen Chen, et al.
Electronics (2023) Vol. 12, Iss. 14, pp. 3139-3139
Open Access | Times Cited: 3
Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory
Jinyan Pan, Hongyang He, Tiejun Li, et al.
physica status solidi (a) (2023) Vol. 220, Iss. 23
Closed Access | Times Cited: 3
Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System
Chia Feng Hsu, Yu‐Chun Huang, Shyh-Jer Huang, et al.
ECS Journal of Solid State Science and Technology (2023) Vol. 12, Iss. 12, pp. 127004-127004
Closed Access | Times Cited: 2
Ferroelectric Mxene-Assisted Bifeo3 Based Free-Standing Memristors for Multifunctional Non-Volatile Memory Storage
Kubra Sattar, Rabia Tahir, Houbing Huang, et al.
(2024)
Closed Access
Nano-ZnO-Decorated lotus fibers for nonvolatile memristors
Ngoc Hong Nguyen, Hau Huu Do Ho, Hieu Thi Le, et al.
Applied Surface Science (2024) Vol. 665, pp. 160366-160366
Closed Access
Resistive switching behavior and thermal stability in the flexible BEFO/ZnO/LSMO heterostructure for flexible/wearable electronics
Di Li, WenLong Liu, Jin Zong, et al.
Ceramics International (2024) Vol. 50, Iss. 20, pp. 39391-39397
Closed Access
Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors
Xiongfeng Wang, Zhenyi Guo, Weiying Zheng, et al.
APL Materials (2024) Vol. 12, Iss. 11
Open Access
Transition Metal Oxide Based Resistive Random-Access Memory: An Overview of Materials and Device Performance Enhancement Techniques
Disha Yadav, Amit Krishna Dwivedi, Shammi Verma, et al.
Journal of Science Advanced Materials and Devices (2024), pp. 100813-100813
Open Access
Metal Oxides: Crystal Structure, Synthesis and Characterization
Karolina Siedliska
Crystals (2024) Vol. 14, Iss. 11, pp. 991-991
Open Access
Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications
R V Tominov, З. Е. Вакулов, V I Avilov, et al.
Nanomaterials (2023) Vol. 13, Iss. 10, pp. 1583-1583
Open Access | Times Cited: 1
Implementation of Stable Nonvolatile Resistive Switching Behaviors in TiO2 Nanoparticle‐Incorporated 2D Layered Halide Perovskite‐Based Devices
Yuanyuan Zhu, Mengyao Chen, Lixin Wang, et al.
physica status solidi (a) (2023) Vol. 220, Iss. 23
Closed Access
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