OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdO x Bilayer Gate Dielectrics
Leini Wang, Gang He, Shanshan Jiang, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 6, pp. 3169-3174
Closed Access | Times Cited: 12
Leini Wang, Gang He, Shanshan Jiang, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 6, pp. 3169-3174
Closed Access | Times Cited: 12
Showing 12 citing articles:
High-performance IGZO/In2O3 NW/IGZO phototransistor with heterojunctions architecture for image processing and neuromorphic computing
Can Fu, Zhiyuan Li, Yujiao Li, et al.
Journal of Material Science and Technology (2024) Vol. 196, pp. 190-199
Closed Access | Times Cited: 8
Can Fu, Zhiyuan Li, Yujiao Li, et al.
Journal of Material Science and Technology (2024) Vol. 196, pp. 190-199
Closed Access | Times Cited: 8
Reduction of SO2 into sulfur over Ce-based catalyst: Performance optimizations and reaction mechanisms
Mutao Xu, Liguo Chen, Xinpei Cheng, et al.
Journal of environmental chemical engineering (2024) Vol. 12, Iss. 5, pp. 114064-114064
Closed Access | Times Cited: 5
Mutao Xu, Liguo Chen, Xinpei Cheng, et al.
Journal of environmental chemical engineering (2024) Vol. 12, Iss. 5, pp. 114064-114064
Closed Access | Times Cited: 5
Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics
Mengchao Li, Qixin Zhuang, Shirong Lu, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 16
Closed Access | Times Cited: 10
Mengchao Li, Qixin Zhuang, Shirong Lu, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 16
Closed Access | Times Cited: 10
Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits
Leini Wang, Gang He, Wenhao Wang, et al.
Journal of Material Science and Technology (2023) Vol. 159, pp. 41-51
Closed Access | Times Cited: 7
Leini Wang, Gang He, Wenhao Wang, et al.
Journal of Material Science and Technology (2023) Vol. 159, pp. 41-51
Closed Access | Times Cited: 7
1/f noise of short-channel indium tin oxide transistors under stress
C.L. Gu, Qianlan Hu, Qijun Li, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 25
Closed Access | Times Cited: 3
C.L. Gu, Qianlan Hu, Qijun Li, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 25
Closed Access | Times Cited: 3
Ultralow-Voltage Eco-Friendly Water-Induced LiOx/AlOx Bilayer Dielectric-Based OFET
Prashant Kumar, Vishwambhar Nath Mishra, Rajiv Prakash
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 8, pp. 4345-4350
Closed Access | Times Cited: 3
Prashant Kumar, Vishwambhar Nath Mishra, Rajiv Prakash
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 8, pp. 4345-4350
Closed Access | Times Cited: 3
Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture
Bo He, Gang He, Shanshan Jiang, et al.
Advanced Electronic Materials (2022) Vol. 9, Iss. 2
Open Access | Times Cited: 5
Bo He, Gang He, Shanshan Jiang, et al.
Advanced Electronic Materials (2022) Vol. 9, Iss. 2
Open Access | Times Cited: 5
Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration
Yan Jin, Gang He, Bo He, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 11, pp. 6417-6422
Closed Access | Times Cited: 3
Yan Jin, Gang He, Bo He, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 11, pp. 6417-6422
Closed Access | Times Cited: 3
Investigation of W/L ratio on the performance of ZnO transistors and inverters
Jingye Xie, Qinyuan Wang, Dedong Han, et al.
Japanese Journal of Applied Physics (2024) Vol. 63, Iss. 11, pp. 11SP07-11SP07
Closed Access
Jingye Xie, Qinyuan Wang, Dedong Han, et al.
Japanese Journal of Applied Physics (2024) Vol. 63, Iss. 11, pp. 11SP07-11SP07
Closed Access
Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures
Kammutty Musliyarakath Abdul Shekkeer, Kuan Yew Cheong, Hock Jin Quah
Ceramics International (2024) Vol. 50, Iss. 14, pp. 25528-25540
Closed Access
Kammutty Musliyarakath Abdul Shekkeer, Kuan Yew Cheong, Hock Jin Quah
Ceramics International (2024) Vol. 50, Iss. 14, pp. 25528-25540
Closed Access
Design of different oxygen content and high performance bilayer In2O3 thin-film transistors at room temperature for flexible electronics
Maojun Zheng, Ablat Abliz, Da Wan
Applied Surface Science (2024) Vol. 681, pp. 161510-161510
Closed Access
Maojun Zheng, Ablat Abliz, Da Wan
Applied Surface Science (2024) Vol. 681, pp. 161510-161510
Closed Access
Effects of N2O plasma treatment on the performance and stability of high indium content InGaZnO thin-film transistors
Patigul Nurmamat, Rui Li, Linyu Yang, et al.
Journal of Physics D Applied Physics (2024) Vol. 58, Iss. 8, pp. 085308-085308
Closed Access
Patigul Nurmamat, Rui Li, Linyu Yang, et al.
Journal of Physics D Applied Physics (2024) Vol. 58, Iss. 8, pp. 085308-085308
Closed Access
