Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic Characteristics
A. D. Paul, S. Biswas, Avijit Dalal, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 4, pp. 1842-1848
Closed Access | Times Cited: 10

Showing 10 citing articles:

High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors
Zicong Guo, Rui Xiong, Yuanyuan Zhu, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 5
Closed Access | Times Cited: 13
Synaptic and resistive switching behaviors of Sm‐doped HfO2 films for bio‐inspired neuromorphic calculations
Jian‐Yuan Zhu, Jiajia Liao, Jian‐Hao Feng, et al.
International Journal of Applied Ceramic Technology (2024) Vol. 21, Iss. 3, pp. 2498-2509
Closed Access | Times Cited: 5
Resistive switching performance and synaptic behavior of La-doped HfO2 thin film
Wu-Wen-Bo Zhang, Yan‐Ping Jiang, Xin‐Gui Tang, et al.
Thin Solid Films (2023) Vol. 774, pp. 139842-139842
Closed Access | Times Cited: 11
An Analysis of Components and Enhancement Strategies for Advancing Memristive Neural Networks
Hyungjun Park, Joon‐Kyu Han, Seongpil Yim, et al.
Advanced Materials (2025)
Open Access
Resistive switching properties and photoelectric synaptic behavior of multilayer structured Au/Ce:HfO2/Al2O3/Ce:HfO2/FTO films
Jiayu Tang, Yan‐Ping Jiang, Yunfeng Su, et al.
Journal of Alloys and Compounds (2025), pp. 179114-179114
Closed Access
A Leaky Integrate-and-Fire Neuron Based on Hexagonal Boron Nitride (h-BN) Monocrystalline Memristor
Fangsheng Qian, Ruosi Chen, Ruopeng Wang, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 11, pp. 6049-6056
Closed Access | Times Cited: 13
Recent Advances in Flexible Resistive Random Access Memory
Peng Tang, Junlong Chen, Tian Qiu, et al.
Applied System Innovation (2022) Vol. 5, Iss. 5, pp. 91-91
Open Access | Times Cited: 10
Cycles Dependent Resistive Switching of Au/ZnO/ITO-Coated PET Flexible Resistive Memory Devices
S.M. Azhar, S. Biswas, A. D. Paul, et al.
(2024), pp. 1-3
Closed Access | Times Cited: 1
Complementary Digital and Analog Resistive Switching Based on AlOₓ Monolayer Memristors for Mixed-Precision Neuromorphic Computing
Chengcheng Wang, Bo Chen, Junyao Mei, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 8, pp. 4488-4492
Closed Access | Times Cited: 3
HfTaOx Rectifying Layer for HfOx-Based RRAM for High-Accuracy Neuromorphic Computing Applications
Ting-Jia Chang, Hoang‐Hiep Le, Cheng-Ying Li, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 5, pp. 2566-2573
Closed Access | Times Cited: 2
Page 1

Scroll to top