OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity
Yin-Chi Liu, Yuchun Li, Ze-Yu Gu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 7, pp. 1116-1119
Closed Access | Times Cited: 9
Yin-Chi Liu, Yuchun Li, Ze-Yu Gu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 7, pp. 1116-1119
Closed Access | Times Cited: 9
Showing 9 citing articles:
Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films
Kangli Xu, Tianyu Wang, Yongkai Liu, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 2, pp. 1055-1062
Closed Access | Times Cited: 3
Kangli Xu, Tianyu Wang, Yongkai Liu, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 2, pp. 1055-1062
Closed Access | Times Cited: 3
Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition
Jaewook Lee, Se Hyun Kim, Hyojun Choi, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 4, pp. 2690-2695
Closed Access | Times Cited: 3
Jaewook Lee, Se Hyun Kim, Hyojun Choi, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 4, pp. 2690-2695
Closed Access | Times Cited: 3
Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles Under Low-Voltage Operation
Yin-Chi Liu, Ji-Ning Yang, Yuchun Li, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 388-391
Closed Access | Times Cited: 5
Yin-Chi Liu, Ji-Ning Yang, Yuchun Li, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 388-391
Closed Access | Times Cited: 5
High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator
Samiran Roy, Md Mobaidul Islam, Arqum Ali, et al.
physica status solidi (a) (2024)
Open Access | Times Cited: 1
Samiran Roy, Md Mobaidul Islam, Arqum Ali, et al.
physica status solidi (a) (2024)
Open Access | Times Cited: 1
Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films
Kangli Xu, Tianyu Wang, Yongkai Liu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 9, pp. 1472-1475
Closed Access | Times Cited: 2
Kangli Xu, Tianyu Wang, Yongkai Liu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 9, pp. 1472-1475
Closed Access | Times Cited: 2
Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing
Shuxian Lyu, Wei Wei, Yang Yang, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 348-351
Closed Access | Times Cited: 2
Shuxian Lyu, Wei Wei, Yang Yang, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 348-351
Closed Access | Times Cited: 2
Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2 interfacial layer
Wei Zhang, Yuxuan Shi, Bowen Zhang, et al.
Nanotechnology (2024) Vol. 35, Iss. 43, pp. 435703-435703
Closed Access
Wei Zhang, Yuxuan Shi, Bowen Zhang, et al.
Nanotechnology (2024) Vol. 35, Iss. 43, pp. 435703-435703
Closed Access
Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process
Yinchi Liu, Jining Yang, Hao Zhang, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 11, pp. 8507-8512
Closed Access
Yinchi Liu, Jining Yang, Hao Zhang, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 11, pp. 8507-8512
Closed Access
Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Devices Enabled by Microwave Annealing
Yinchi Liu, Hao Zhang, Jining Yang, et al.
Chip (2024), pp. 100120-100120
Open Access
Yinchi Liu, Hao Zhang, Jining Yang, et al.
Chip (2024), pp. 100120-100120
Open Access
