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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films
Zhenhai Li, Tianyu Wang, Yongkai Liu, et al.
IEEE Electron Device Letters (2022) Vol. 44, Iss. 1, pp. 56-59
Closed Access | Times Cited: 12

Showing 12 citing articles:

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
Qingxuan Li, Siwei Wang, Zhenhai Li, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 17
The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices
Zhenhai Li, Jinchen Wei, Jialin Meng, et al.
Nano Letters (2023) Vol. 23, Iss. 10, pp. 4675-4682
Closed Access | Times Cited: 16
DFT Study of Electronic, Optical, Thermoelectric, and Thermodynamic Properties of the HfO2 Material
S. Benyoussef, A. Jabar, N. Tahiri, et al.
Brazilian Journal of Physics (2024) Vol. 54, Iss. 3
Closed Access | Times Cited: 5
Probing Hf0.5Zr0.5O2 Ferroelectricity: Neutron Reflectivity Reveals Critical Interface Effects
Hsing-Yang Chen, Chi-Lin Mo, Jing‐Jong Shyue, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic system
Yongjin Park, Jihyung Kim, Sunghun Kim, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 40, pp. 13886-13896
Closed Access | Times Cited: 12
3D Vertical Ferroelectric Capacitors with Excellent Scalability
Eunjin Lim, Yongjin Park, Chaewon Youn, et al.
Nano Letters (2025)
Closed Access
Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer
Yongkai Liu, Tianyu Wang, Zhenhai Li, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 9
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Zhaohao Zhang, Guoliang Tian, Jiali Huo, et al.
Science China Information Sciences (2023) Vol. 66, Iss. 10
Open Access | Times Cited: 6
Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction With Different Bottom Electrodes
Zhenhai Li, Jialin Meng, Jiajie Yu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 6, pp. 947-950
Closed Access | Times Cited: 5
Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays
Guo Shu-ming, Jiajie Yu, Hao Wang, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 6, pp. 3645-3650
Closed Access | Times Cited: 1
Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Zhenhai Li, Sen Tang, Tianyu Wang, et al.
Advanced Science (2024)
Closed Access
2023 Index IEEE Electron Device Letters Vol. 44

IEEE Electron Device Letters (2023) Vol. 44, Iss. 12, pp. 2075-2182
Open Access
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