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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Self-Powered Broadband Photodetector Based on a Monolayer InSe p - i - n Homojunction
Lin Li, Peize Yuan, Ting Liu, et al.
Physical Review Applied (2023) Vol. 19, Iss. 1
Closed Access | Times Cited: 20

Showing 20 citing articles:

Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga2O3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application
Chao Wu, Guang Zhang, Jinhua Jia, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 14, pp. 3828-3834
Closed Access | Times Cited: 44
Design and analysis of monolayer GaN-boron phosphide lateral heterostructures for ultraviolet photodetection and rectification
Linwei Yao, Jiangni Yun, Hongyuan Zhao, et al.
Applied Surface Science (2025), pp. 162428-162428
Closed Access | Times Cited: 1
First-principles analysis of the photocurrent in a monolayer α-selenium p–n junction optoelectronic device
Yuqian Wang, Xiaoyong Xiong, Shibo Fang, et al.
Physical Chemistry Chemical Physics (2025)
Closed Access
Effect of nanopore on mechanical characteristics of indium selenide membrane
Thi-Nhai Vu, Van-Trung Pham, Duc-Binh Luu, et al.
Journal of the Brazilian Society of Mechanical Sciences and Engineering (2025) Vol. 47, Iss. 2
Closed Access
Extraordinary photoresponse in sub-5 nm 2D GaN tunneling field effect transistor for optical detection application
Hai-Qing Xie, Xinyue Wang, Kaiyue Cui, et al.
Physics Letters A (2025), pp. 130458-130458
Closed Access
Diverging shift current responses in the gapless limit of two-dimensional systems
Hiroki Yoshida, Shuichi Murakami
Physical review. B./Physical review. B (2025) Vol. 111, Iss. 15
Open Access
Large Switchable Circular Photogalvanic Effect in the Narrow-Band-Gap InSe / In2Se3 Ferroelectric Heterojunction
Guoli Lin, Yiqun Xie, Shu Li, et al.
Physical Review Applied (2023) Vol. 20, Iss. 3
Closed Access | Times Cited: 10
Theoretical Design of a Multifunctional Two-Dimensional HfGeTe4 -Based Optoelectronic Device Utilizing the Anisotropic Photogalvanic Effect
Degao Xu, Jindou Ru, Biao Cai, et al.
Physical Review Applied (2023) Vol. 20, Iss. 5
Closed Access | Times Cited: 10
Promising transport properties of multifunctional monolayer GeSe nanodevices
Xianghe Liu, Yuliang Mao
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 20, pp. 7252-7259
Closed Access | Times Cited: 3
Two-dimensional HfS2–ZrS2 lateral heterojunction FETs with high rectification and photocurrent
Lin Li, Peize Yuan, Zinan Ma, et al.
Nanoscale (2023) Vol. 15, Iss. 43, pp. 17633-17641
Closed Access | Times Cited: 5
High-performance self-driven ultraviolet-visible photodetector based on type-II WS2/ReSe2 van der Waals heterostructure
Changhui Du, Honglei Gao, Yurun Sun, et al.
Journal of Alloys and Compounds (2023) Vol. 976, pp. 173122-173122
Closed Access | Times Cited: 5
Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current
Xueping Li, Xiaojie Tang, Zhuojun Wang, et al.
Frontiers of Physics (2024) Vol. 19, Iss. 5
Closed Access | Times Cited: 1
Interface-controlled band alignments in Janus Ga2STe/MoSi2N4 vdWHs
Ting Liu, Mengjie He, Chenhai Shen, et al.
Physica B Condensed Matter (2023) Vol. 666, pp. 415061-415061
Closed Access | Times Cited: 2
Ultrafast charge transfer and optoelectronic performance of n−InSe/m−SnS (GeSe) van der Waals heterostructures
Xueping Li, Xuan Qin, Lin Li, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 16
Closed Access
InSe Nanosheets with In/Au Electrodes for Self-Driven, High Storage Performance Photodetectors
Meng Wang, Haiyan Nan, Xiaoyu Gao, et al.
ACS Applied Nano Materials (2024)
Closed Access
Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor
Caixia Guo, Wenlong Jiao, Tianxing Wang
Ferroelectrics (2024) Vol. 618, Iss. 4, pp. 1031-1043
Closed Access
Interface enhanced photogalvanic effects in the MoSi2N4 monolayer for spintronics
Yiming Wang, Yiqun Xie, Guoli Lin, et al.
Physical Review Materials (2024) Vol. 8, Iss. 7
Closed Access
Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): promising optoelectronic materials in photovoltaic photodetectors
Zhou Cui, Chen Yang Huang, Yadong Yu, et al.
Surfaces and Interfaces (2024), pp. 105160-105160
Closed Access
Adsorption behavior of Janus MoSiGeN4 monolayer for gas-sensing application with high sensitivity and reuse
Xueping Li, Ting Li, Jianye Wang, et al.
Physica E Low-dimensional Systems and Nanostructures (2023) Vol. 153, pp. 115777-115777
Closed Access | Times Cited: 1
Orientation-Dependent Transport and Photodetection in WSe2/MoSe2 Planar Heterojunction Transistors
Xueping Li, Zhuojun Wang, Lin Li, et al.
IEEE Transactions on Electron Devices (2023) Vol. 71, Iss. 2, pp. 1274-1279
Closed Access | Times Cited: 1
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