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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

HfO2-based resistive switching memory devices for neuromorphic computing
Stefano Brivio, Sabina Spiga, Daniele Ielmini
Neuromorphic Computing and Engineering (2022) Vol. 2, Iss. 4, pp. 042001-042001
Open Access | Times Cited: 47

Showing 1-25 of 47 citing articles:

In-memory computing with emerging memory devices: Status and outlook
Piergiulio Mannocci, Matteo Farronato, Nicola Lepri, et al.
APL Machine Learning (2023) Vol. 1, Iss. 1
Open Access | Times Cited: 56
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Jaewook Lee, Kun Yang, Ju Young Kwon, et al.
Nano Convergence (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 40
Heterogeneous Integration of Graphene and HfO2 Memristors
Urška Trstenjak, Kalle Goß, Alexander Gutsche, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 19
Open Access | Times Cited: 8
Roadmap to neuromorphic computing with emerging technologies
Adnan Mehonić, Daniele Ielmini, Kaushik Roy, et al.
APL Materials (2024) Vol. 12, Iss. 10
Open Access | Times Cited: 8
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
Markus Hellenbrand, Judith L. MacManus‐Driscoll
Nano Convergence (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 17
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Seyeong Yang, Taegyun Kim, Sunghun Kim, et al.
Advanced Materials Interfaces (2023) Vol. 10, Iss. 21
Open Access | Times Cited: 14
Dual-layer volatile memristor with ultralow voltage slope
Pengtao Li, Z. G. Wang, Shengpeng Xing, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 10
Closed Access | Times Cited: 4
Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
Muhammad Ismail, Sunghun Kim, Maria Rasheed, et al.
Journal of Alloys and Compounds (2024) Vol. 1003, pp. 175411-175411
Closed Access | Times Cited: 4
Process-dependent ferroelectric and memristive properties in polycrystalline Ca:HfO2-based devices
C. Ferreyra, Miguel Badillo, M. J. Sánchez, et al.
Frontiers in Materials (2025) Vol. 11
Open Access
Investigations on structural, electronic, magnetic, and optical response of HfXO2 (X = Al/Ga/In) novel materials for optoelectronic applications
M. Junaid Iqbal Khan, Asif Rasheed, Asma Iqbal, et al.
The European Physical Journal B (2025) Vol. 98, Iss. 1
Closed Access
High-Stability Resistive Switching Memristor with High-Retention Memory Window Response for Brain-Inspired Computing
Rajwali Khan, Shahid Iqbal, Kwun Nam Hui, et al.
Sensors and Actuators A Physical (2025), pp. 116316-116316
Open Access
Spatial Atomic Layer Deposition for Energy and Electronic Devices
Robert L. Z. Hoye, David Muñoz‐Rojas, Zhuotong Sun, et al.
PRX Energy (2025) Vol. 4, Iss. 1
Open Access
Resistive switching effect of HfO2/Nb:SrTiO3 under the influence of nanodefects and varying atmospheric conditions
Chengang Dong, Jianbo Liu, Dongqing Liu, et al.
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2025) Vol. 43, Iss. 2
Closed Access
Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic system
Yongjin Park, Jihyung Kim, Sunghun Kim, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 40, pp. 13886-13896
Closed Access | Times Cited: 12
Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Siqin Li, Jigang Du, Bojing Lu, et al.
Materials Horizons (2023) Vol. 10, Iss. 12, pp. 5643-5655
Closed Access | Times Cited: 11
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
H. García, Guillermo Vinuesa, E. García-Ochoa, et al.
Journal of Physics D Applied Physics (2023) Vol. 56, Iss. 36, pp. 365108-365108
Closed Access | Times Cited: 10
In-memory analog solution of compressed sensing recovery in one step
Shiqing Wang, Yubiao Luo, Pushen Zuo, et al.
Science Advances (2023) Vol. 9, Iss. 50
Open Access | Times Cited: 9
Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications
Hanbin Chen, Chia‐Hsun Hsu, Wan-Yu Wu, et al.
Applied Surface Science (2024) Vol. 665, pp. 160305-160305
Closed Access | Times Cited: 3
Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks
Hyeongwook Kim, Ji-Hwan Lee, Hyun Kim, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 44, pp. 51444-51452
Closed Access | Times Cited: 7
SHIP: a computational framework for simulating and validating novel technologies in hardware spiking neural networks
Emanuele Gemo, Sabina Spiga, Stefano Brivio
Frontiers in Neuroscience (2024) Vol. 17
Open Access | Times Cited: 2
Enhancing ferroelectricity in HfAlOx-based ferroelectric tunnel junctions: A comparative study of MFS and MFIS structures with ultrathin interfacial layers
Yongjin Park, Woo-Hyun Park, Sungjun Kim
Ceramics International (2024) Vol. 50, Iss. 15, pp. 26849-26857
Closed Access | Times Cited: 2
Emulation of neuron and synaptic functions in spin–orbit torque domain wall devices
Durgesh Kumar, Ramu Maddu, Hong Jing Chung, et al.
Nanoscale Horizons (2024) Vol. 9, Iss. 11, pp. 1962-1977
Open Access | Times Cited: 2
Dual in-memory computing of matrix-vector multiplication for accelerating neural networks
Shiqing Wang, Zhong Sun
Device (2024), pp. 100546-100546
Open Access | Times Cited: 2
Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons
Hongyi Dou, Zehao Lin, Zedong Hu, et al.
Nano Letters (2023) Vol. 23, Iss. 21, pp. 9711-9718
Open Access | Times Cited: 6
Nanoscale Ni/Mo/MoO3/Ni memristor for synaptic applications
M. Praveen, Atul Kumar Nishad, Vipul Kumar Nishad
Electronics Letters (2024) Vol. 60, Iss. 5
Open Access | Times Cited: 1
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