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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications
Ying Zhu, Yongli He, Shanshan Jiang, et al.
Journal of Semiconductors (2021) Vol. 42, Iss. 3, pp. 031101-031101
Closed Access | Times Cited: 73

Showing 1-25 of 73 citing articles:

A Low‐Toxic Colloidal Quantum Dots Sensitized IGZO Phototransistor Array for Neuromorphic Vision Sensors
Tong Chen, Shijie Zhan, Benxuan Li, et al.
Advanced Optical Materials (2024) Vol. 12, Iss. 11
Closed Access | Times Cited: 9
Monolithic Integration of GaN-Based Transistors and Micro-LED
Honghui He, Jinpeng Huang, Tao Tao, et al.
Nanomaterials (2024) Vol. 14, Iss. 6, pp. 511-511
Open Access | Times Cited: 8
Optimization of Co-sputtered Zinc Indium Tin Oxide-based MOSFET-type Sensor for Effective NO2 Gas Detection
Hunhee Shin, Jinwoo Park, Donghee Kim, et al.
Sensors and Actuators B Chemical (2025) Vol. 428, pp. 137262-137262
Closed Access | Times Cited: 1
Recent advances in emerging neuromorphic computing and perception devices
Yixin Zhu, Ying Zhu, Huiwu Mao, et al.
Journal of Physics D Applied Physics (2021) Vol. 55, Iss. 5, pp. 053002-053002
Closed Access | Times Cited: 42
BCM Learning Rules Emulated by a-IGZO-Based Photoelectronic Neuromorphic Transistors
Shuo Ke, Chuanyu Fu, Xinhuang Lin, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 8, pp. 4646-4650
Closed Access | Times Cited: 28
Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress
Anzhi Yan, Chunlin Wang, Jianlan Yan, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 3
Closed Access | Times Cited: 21
Advances in mobility enhancement of ITZO thin-film transistors: a review
Feilian Chen, Meng Zhang, Yunhao Wan, et al.
Journal of Semiconductors (2023) Vol. 44, Iss. 9, pp. 091602-091602
Open Access | Times Cited: 19
Strategies for Applications of Oxide-Based Thin Film Transistors
Lirong Zhang, Huaming Yu, Wenping Xiao, et al.
Electronics (2022) Vol. 11, Iss. 6, pp. 960-960
Open Access | Times Cited: 25
Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor
Tong Chen, Chunyun Wang, Guoshen Yang, et al.
Advanced Materials Technologies (2022) Vol. 8, Iss. 1
Closed Access | Times Cited: 23
Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics
Bo He, Gang He, Li Zhu, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 6
Closed Access | Times Cited: 14
An ultra-low power wake-Up timer compatible with n-FET based flexible technologies
D. Narbón, Juan Luis Soler-Fernández, Ana Isabel Santos, et al.
npj Flexible Electronics (2025) Vol. 9, Iss. 1
Open Access
Synthesis innovations for crystallizing covalent organic framework thin films on biological and non-biological substrates
Ashok Kumar Mahato, Satyadip Paul, Rahul Banerjee
Chemical Society Reviews (2025)
Open Access
Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Hongwei Tang, Harold Dekkers, Nouredine Rassoul, et al.
IEEE Transactions on Electron Devices (2023) Vol. 71, Iss. 1, pp. 567-573
Closed Access | Times Cited: 11
N‐Doped ZnSnO Optoelectronic Synaptic Thin Film Transistors with Enhanced Visible‐Light Response
Xiaohan Liu, Junyan Ren, Peixuan Hu, et al.
physica status solidi (RRL) - Rapid Research Letters (2024) Vol. 18, Iss. 5
Closed Access | Times Cited: 4
Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K
Jianjian Wang, Jinshun Bi, Gaobo Xu, et al.
Electronics (2024) Vol. 13, Iss. 8, pp. 1427-1427
Open Access | Times Cited: 4
Organic–Inorganic Hybrid Dielectric Layers for Low-Temperature Thin-Film Transistors Applications: Recent Developments and Perspectives
J. Meza-Arroyo, R. Ramı́rez-Bon
Technologies (2025) Vol. 13, Iss. 1, pp. 20-20
Open Access
High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes
Min-Woo Park, Sohyeon Kim, Steven F. Son, et al.
Materials (2025) Vol. 18, Iss. 2, pp. 216-216
Open Access
Impact of constant bias stress on reliability of IGZO thin-film transistors on softening polymer
Gerardo Gutiérrez‐Heredia, Ovidio Rodriguez‐Lopez, Pedro Emanuel Rocha-Flores, et al.
Microelectronic Engineering (2025), pp. 112331-112331
Closed Access
Low Input Impedance IZO TFT Transimpedance Amplifiers With Current Buffer for Sensing and Transfer Applications
Mingjian Zhao, Laiqing Li, Hanyu Lu, et al.
International Journal of Circuit Theory and Applications (2025)
Closed Access
Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors
Chunlan Wang, Yongle Song, Hao Huang
Nanomaterials (2022) Vol. 12, Iss. 18, pp. 3233-3233
Open Access | Times Cited: 18
Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems
Runxiao Shi, Tengteng Lei, Zhihe Xia, et al.
Journal of Semiconductors (2023) Vol. 44, Iss. 9, pp. 091601-091601
Closed Access | Times Cited: 10
Inkjet printed IGZO memristors with volatile and non-volatile switching
Miguel Franco, Asal Kiazadeh, Jonas Deuermeier, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access | Times Cited: 3
High-density integration of uniform sub-22 nm silicon nanowires for transparent thin film transistors on glass
Wei Liao, Ying Zhang, Dianlun Li, et al.
Applied Surface Science (2024) Vol. 679, pp. 161213-161213
Closed Access | Times Cited: 3
A Spiking Stochastic Neuron Based on Stacked InGaZnO Memristors
Huiwu Mao, Yongli He, Chunsheng Chen, et al.
Advanced Electronic Materials (2021) Vol. 8, Iss. 2
Closed Access | Times Cited: 22
Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors
Yilin Li, Xuan Zeng, Qiannan Ye, et al.
Surfaces and Interfaces (2022) Vol. 33, pp. 102184-102184
Closed Access | Times Cited: 15
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