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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

MA2Z4 family heterostructures: Promises and prospects
Che Chen Tho, San‐Dong Guo, Shi‐Jun Liang, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 4
Open Access | Times Cited: 59

Showing 1-25 of 59 citing articles:

Tunable valley-spin splitting in a Janus XMSiN2 monolayer (X=S, Se; M
Jun Zhao, Yunxi Qi, Can Yao, et al.
Physical review. B./Physical review. B (2024) Vol. 109, Iss. 3
Closed Access | Times Cited: 20
Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer
Jun Zhao, Yunxi Qi, Can Yao, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 9
Closed Access | Times Cited: 14
Strain-induced tunable valley polarization and topological phase transition in SVSiN2 monolayer
Yunxi Qi, Can Yao, Jun Zhao, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 12, pp. 4417-4425
Closed Access | Times Cited: 13
A new family of septuple-layer 2D materials of MoSi2N4-like crystals
Tatiana Latychevskaia, D. A. Bandurin, Kostya S. Novoselov
Nature Reviews Physics (2024) Vol. 6, Iss. 7, pp. 426-438
Closed Access | Times Cited: 12
Spin-dependent multilevel interactions at a nonmagnetic/magnetic MoSe2/VSe2 van der Waals interface and multifunctional properties
Meng-Xue Ren, Yuejiao Zhang, Yumeng Gao, et al.
Physical review. B./Physical review. B (2024) Vol. 109, Iss. 4
Closed Access | Times Cited: 7
Ultrathick MA2N4(M'N) Intercalated Monolayers with Sublayer‐Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Liemao Cao, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 7
Open Access | Times Cited: 6
Controllable electronic properties, contact barriers and contact types in a TaSe2/WSe2 metal–semiconductor heterostructure
Son T. Nguyen, Cuong Q. Nguyen, Nguyen N. Hieu, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 12, pp. 9657-9664
Closed Access | Times Cited: 4
First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure
Son T. Nguyen, Nguyen N. Hieu, Huy Le‐Quoc, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 14, pp. 3624-3631
Open Access | Times Cited: 4
Interlayer coupling dependent spin and valley polarization in a two-dimensional metal-semiconductor contact heterostructure
Zongyu Huang, Zongyu Huang, Xi Chen, et al.
Physical review. B./Physical review. B (2025) Vol. 111, Iss. 7
Closed Access
Achieving n- and p-type Ohmic Contacts in Vertical Graphene/CrSi2N4 Heterostructure: Role of Electric Field
Meng Chen, Shuo Liu, Mengying Zhao, et al.
Physica E Low-dimensional Systems and Nanostructures (2025) Vol. 170, pp. 116201-116201
Closed Access
Optical anisotropy in WS2/ReS2 heterostructure with one-dimensional moiré pattern
Wentao Yu, Shuxian Wang, Zhaoming Liang, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 5
Closed Access
Discovering XSiGeN4: 2D Janus layers with ultra-high carrier mobility and pathways to future electronics
Bo Zhang, Huai‐Qian Wang, Huifang Li, et al.
Surfaces and Interfaces (2025), pp. 106025-106025
Closed Access
Designing the weak Fermi pinning and p-type Ohmic contacts to monolayer halide perovskite Cs3Bi2I9
Wei Tan, Yu-Fei Lang, Y.D. Li, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 6
Closed Access
Distinctive Electronic and Spin Properties Driven by Strong Interlayer Hybridization in the α-Tellurene/GaTe Bilayer
Yujin Liu, Zhixiang Pan, Guoxing Chen, et al.
Langmuir (2025)
Closed Access
Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor
Che Chen Tho, Shibo Fang, Yee Sin Ang
(2025) Vol. 1, Iss. 1
Open Access
First-Principles Investigation of MoS2/MoSe2-Janus XMoSiZ2 (X = S, Se, Te; Z = N, P) Heterostructures as Photocatalysts for Water Splitting
Yuan Zhao, Zheng Dai, Xixi Jia, et al.
ACS Applied Nano Materials (2025)
Closed Access
Superconductor-semiconductor-superconductor lateral heterojunction diodes based on MSi2N4 ( M
Xiaozheng Fan, Ruqian Wu, Chun-Lan Ma, et al.
Physical Review Applied (2025) Vol. 23, Iss. 3
Closed Access
Tunable abundant valley Hall effect and chiral spin–valley locking in Janus monolayer VCGeN4
Jia Kang, Xiao-Jing Dong, Sheng-shi Li, et al.
Nanoscale (2024) Vol. 16, Iss. 17, pp. 8639-8649
Closed Access | Times Cited: 4
Exploration of the Two-Dimensional Ising Magnetic Materials in the Triangular Prismatic Crystal Field
Shuhang Chen, Wenjing Xu, Yueyue Ning, et al.
The Journal of Physical Chemistry C (2024) Vol. 128, Iss. 1, pp. 556-562
Open Access | Times Cited: 3
Enhancing the electronic and optical properties of the metal/semiconductor NbS2/BSe nanoheterostructure towards advanced electronics
SonBinh T. Nguyen, T. T. T. Huong, Nguyễn Xuân Ca, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 5, pp. 1565-1572
Open Access | Times Cited: 3
First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX2 (X = N, P, As) monolayers
Wantao Gan, Xinguo Ma, Jiajun Liao, et al.
New Journal of Chemistry (2024) Vol. 48, Iss. 15, pp. 6780-6788
Closed Access | Times Cited: 3
First-Principles Prediction of 2D Semiconductors MAN3 (M = V, Nb, Ta; A = Si, Ge) from the MA2N4 Family: Implication for Optoelectronics Applications
Ying Zhu, Peiyue Li, Jun‐Hui Yuan, et al.
ACS Applied Nano Materials (2024) Vol. 7, Iss. 7, pp. 7300-7311
Closed Access | Times Cited: 3
First-principles study on graphene/WSi2N4 van der Waals heterostructure: Tuning the Schottky barrier
Jiahui Li, Hong Li, Zhonghao Bai, et al.
Physica B Condensed Matter (2024) Vol. 683, pp. 415926-415926
Closed Access | Times Cited: 3
Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi2N4 (X = Mo, W) Monolayers
Abdul Jalil, Tingkai Zhao, Ammara Firdous, et al.
Langmuir (2024) Vol. 40, Iss. 16, pp. 8463-8473
Closed Access | Times Cited: 3
Electric field and strain tunable band gap and band alignments of MoSi2N4/MSe (M = In, Ga) van der Waals heterostructures
Jin Quan Ng, Qingyun Wu, Yee Sin Ang, et al.
RSC Applied Interfaces (2024) Vol. 1, Iss. 6, pp. 1156-1165
Open Access | Times Cited: 3
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