OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Realizing multiple non-volatile resistance states in a two-dimensional domain wall ferroelectric tunneling junction
Minzhi Dai, Zhiyuan Tang, Xin Luo, et al.
Nanoscale (2023) Vol. 15, Iss. 20, pp. 9171-9178
Closed Access | Times Cited: 6
Minzhi Dai, Zhiyuan Tang, Xin Luo, et al.
Nanoscale (2023) Vol. 15, Iss. 20, pp. 9171-9178
Closed Access | Times Cited: 6
Showing 6 citing articles:
The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications
Qing Liu, Silin Cui, Renji Bian, et al.
ACS Nano (2024) Vol. 18, Iss. 3, pp. 1778-1819
Closed Access | Times Cited: 24
Qing Liu, Silin Cui, Renji Bian, et al.
ACS Nano (2024) Vol. 18, Iss. 3, pp. 1778-1819
Closed Access | Times Cited: 24
Nonvolatile Memory Device Based on the Ferroelectric Metal/Ferroelectric Semiconductor Junction
Yan Li, Yulin Yang, Hanzhang Zhao, et al.
Nano Letters (2025)
Closed Access | Times Cited: 1
Yan Li, Yulin Yang, Hanzhang Zhao, et al.
Nano Letters (2025)
Closed Access | Times Cited: 1
Ferroelectric tunnel junctions: promise, achievements and challenges
Sung Hyuk Park, Hyeon Ji Lee, Min Hyuk Park, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 25, pp. 253002-253002
Closed Access | Times Cited: 6
Sung Hyuk Park, Hyeon Ji Lee, Min Hyuk Park, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 25, pp. 253002-253002
Closed Access | Times Cited: 6
Two-dimensional van der Waals ferroelectrics: A pathway to next-generation devices in memory and neuromorphic computing
Hongyuan Zhao, Jiangni Yun, Zhen Li, et al.
Materials Science and Engineering R Reports (2024) Vol. 161, pp. 100873-100873
Closed Access | Times Cited: 3
Hongyuan Zhao, Jiangni Yun, Zhen Li, et al.
Materials Science and Engineering R Reports (2024) Vol. 161, pp. 100873-100873
Closed Access | Times Cited: 3
Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions
Jin Yuan, Jian‐Qing Dai, Yuzhu Liu, et al.
Surfaces and Interfaces (2024) Vol. 46, pp. 103977-103977
Closed Access | Times Cited: 1
Jin Yuan, Jian‐Qing Dai, Yuzhu Liu, et al.
Surfaces and Interfaces (2024) Vol. 46, pp. 103977-103977
Closed Access | Times Cited: 1
Tunneling Electroresistance Effect and Low On-State Resistance-Area Product in Monolayer-In2se3-Based Van Der Waals Ferroelectric Tunnel Junctions
Jin Yuan, Jian‐Qing Dai, Yuzhu Liu, et al.
(2023)
Closed Access
Jin Yuan, Jian‐Qing Dai, Yuzhu Liu, et al.
(2023)
Closed Access
