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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

An analysis of Schottky barrier in silicene/Ga2SeS heterostructures by employing electric field and strain
R. Caglayan, Hüseyin Güler, Y. Mogulkoc
Physical Chemistry Chemical Physics (2022) Vol. 24, Iss. 17, pp. 10210-10221
Closed Access | Times Cited: 33

Showing 1-25 of 33 citing articles:

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors
Waqas Ahmad, Liang Pan, Karim Khan, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 19
Closed Access | Times Cited: 43
Realization of controllable multifunctionality by interfacial engineering: the case of silicene/hBN van der Waals heterostructure
M.W. Younis, Masood Yousaf, Toheed Akhter, et al.
Modelling and Simulation in Materials Science and Engineering (2024) Vol. 32, Iss. 2, pp. 025006-025006
Closed Access | Times Cited: 9
Adsorption of small gas molecules onto the two-dimensional Janus SnSSe monolayer
Y. Zengin, R. Caglayan, Y. Mogulkoc
Computational Condensed Matter (2023) Vol. 36, pp. e00815-e00815
Closed Access | Times Cited: 13
Exploring electronic characteristics of bilayer HfS2 under mechanical strain and external electric field: A first-principles approach
Jinlin Bao, Guili Liu, Lü Yang, et al.
Chinese Journal of Physics (2024) Vol. 89, pp. 1415-1430
Closed Access | Times Cited: 5
A first-principles study of Ti2B2T2/MoSi2N4 (T = F, O, OH) van der Waals heterostructures: Response characteristics to external electric field and uniaxial strain
Zheng Dai, Lina Bai, Juan Wang, et al.
Surfaces and Interfaces (2024) Vol. 48, pp. 104305-104305
Closed Access | Times Cited: 4
Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties
Chu Viet Ha, R. Ponce‐Pérez, J. Guerrero-Sánchez, et al.
Advanced Theory and Simulations (2024) Vol. 7, Iss. 6
Closed Access | Times Cited: 4
Electrical contact between 2D material NbS2 and WSSe
Jingjun Chen, Zelong Ma, Danni Wang, et al.
Physica E Low-dimensional Systems and Nanostructures (2025), pp. 116179-116179
Closed Access
Performing of Spin‐Dependent Diodes in Co‐Doped SiC Bilayer by Fully Epitaxial Magnetic Tunnel Junctions
Xingkun Liang, Zhengxin Yan, Juntao Kong, et al.
Advanced Theory and Simulations (2025)
Closed Access
First-Principles Investigation of MXene/MoSi2N4 van der Waals Heterostructures: Strong Fermi Level Pinning Effect Resulting in Ohmic Contact with Low Contact Resistance
Jiahui Wang, Zijian Zhang, Jiaguo Shen, et al.
The Journal of Physical Chemistry C (2023) Vol. 127, Iss. 36, pp. 18067-18075
Closed Access | Times Cited: 9
Unveiling a novel silicene-like material: A DFT study on pentahexoctite-silicon and its optoelectronic characteristics
K. A. L. Lima, Luiz Antônio Ribeiro
Computational Condensed Matter (2024) Vol. 39, pp. e00897-e00897
Open Access | Times Cited: 3
Comprehensive study on electronic structures of SiGe/Ga$$_{2}$$SeTe vdW heterobilayer
Y. Mogulkoc, Hüseyin Güler, B. N. Tokmakci, et al.
Journal of Materials Science (2023) Vol. 58, Iss. 9, pp. 4020-4030
Closed Access | Times Cited: 8
Effects of charge rearrangement on interfacial contact resistance of TiO2/graphite from first-principles calculations
Hu Sun, Zhutian Xu, Di Zhang, et al.
Applied Surface Science (2023) Vol. 635, pp. 157640-157640
Closed Access | Times Cited: 8
Unexpected electro-catalytic activity of the CO reduction reaction on Cr-embedded poly-phthalocyanine realized by strain engineering: a computational study
Wenzhen Xu, Yunpeng Shu, Mengmeng Xu, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 18, pp. 12872-12881
Closed Access | Times Cited: 7
Novel two-dimensional Janus YMN (M= I, Br and N= Cl, Br) monolayers
Ceren Tayran, Y. Mogulkoc, M. Çakmak
Materials Science in Semiconductor Processing (2023) Vol. 166, pp. 107745-107745
Closed Access | Times Cited: 6
Interfacial electronic characteristics and tunable contact types in novel silicene/Janus Ga2STe heterobilayers
Huabing Shu, Xiaomei Liu
Surfaces and Interfaces (2022) Vol. 35, pp. 102451-102451
Closed Access | Times Cited: 8
Modulation of contact types and Schottky barrier in Ti3C2T2/TiSi2N4 (T = O or OH) van der Waals heterostructures by biaxial strain and external electric field
Zijian Zhang, Jiahui Wang, Zheng Dai, et al.
Chemical Physics (2023) Vol. 573, pp. 111996-111996
Closed Access | Times Cited: 4
Electronic and optical properties of MoSSe/borophene heterojunctions with the modulation of electric field and vacancy defects
Danni Wang, Yu Wang, Zelong Ma, et al.
Materials Science and Engineering B (2023) Vol. 300, pp. 117137-117137
Closed Access | Times Cited: 4
Possible room-temperature ferromagnetic semiconductor in monolayer MnSe2 through a metal-semiconductor transition
Jia-Wen Li, Gang Su, Bo Gu
Physical review. B./Physical review. B (2024) Vol. 109, Iss. 13
Open Access | Times Cited: 1
Theoretical study of HfS2 as anode material of zinc ion battery in sports wearable equipment
Jianghua Han
Computational and Theoretical Chemistry (2024), pp. 114869-114869
Closed Access | Times Cited: 1
Interfacial characteristics, metal-semiconductor contact and optical properties of CSe and BX (X=B, As and Sb) monolayers
M. Idrees, M.W. Khurami, B. Amin, et al.
Materials Science in Semiconductor Processing (2023) Vol. 163, pp. 107593-107593
Closed Access | Times Cited: 3
Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures
Pan Zhang, Pan Li, Qing-Min Ma, et al.
Applied Surface Science (2023) Vol. 623, pp. 157022-157022
Closed Access | Times Cited: 3
Schottky diodes based on blue phosphorene nanoribbon homojunctions
Yue-Hong Liu, Xiangqian Lu, Mi‐Mi Dong, et al.
Physical Chemistry Chemical Physics (2022) Vol. 24, Iss. 47, pp. 29057-29063
Closed Access | Times Cited: 5
Strain induced modification in thermal properties of monolayer 1T-HfS2 and HfS2/HfSe2 heterojunction
Jinlin Bao, Lü Yang, Guili Liu, et al.
Chemical Physics (2023) Vol. 575, pp. 112003-112003
Closed Access | Times Cited: 2
Analytical Current Transport Model of Silicene-based TFETs
Farhana Afrin, Sabbir Hossain, Md. Tabil Ahammed
2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT) (2022), pp. 1529-1533
Closed Access | Times Cited: 3
Electric-field-controlled Schottky barriers in BSe/M2CF2 (M = Ta, W) van der Waals heterostructures: A computational study
Li-Ting Zhang, Lixin Xia, Xianfeng Yu, et al.
Micro and Nanostructures (2024) Vol. 191, pp. 207842-207842
Closed Access
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