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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Advanced artificial synaptic thin-film transistor based on doped potassium ions for neuromorphic computing via third-generation neural network
Yixin Cao, Tianshi Zhao, Chun Zhao, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 8, pp. 3196-3206
Open Access | Times Cited: 23

Showing 23 citing articles:

Donor Engineering Tuning the Analog Switching Range and Operational Stability of Organic Synaptic Transistors for Neuromorphic Systems
Yanfei Zhao, Chaohui Su, Guangyue Shen, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 36
Closed Access | Times Cited: 39
Emerging electrolyte-gated transistors for neuromorphic perception
Cui Sun, Xuerong Liu, Qian Jiang, et al.
Science and Technology of Advanced Materials (2023) Vol. 24, Iss. 1
Open Access | Times Cited: 24
Preparation and Performance Analysis of Thin-Film Artificial Intelligence Transistors Based on Integration of Storage and Computing
Peilong Xu, Incheol Shin
IEEE Access (2024) Vol. 12, pp. 30593-30603
Open Access | Times Cited: 10
Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications
Naif H. Al-Hardan, Muhammad Azmi Abdul Hamid, Azman Jalar, et al.
Materials Today Physics (2023) Vol. 38, pp. 101279-101279
Closed Access | Times Cited: 13
Quantum Dot‐Enhanced Dual‐Modality Heterojunction Optoelectronic Synapse for Neuromorphic Computing
Junyan Li, Lei Hao, Kanghong Wang, et al.
Advanced Optical Materials (2025)
Closed Access
Thermal Annealing-Driven Modulation of Charge Trapping and Synaptic Plasticity in a Sol–Gel AlOx-Based Floating Gate Transistor
S. M. Rathod R. B. Bhise, Youngseok Song, Daehong Kim, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Neuromorphic Vision Array Based on Full-Spectrum Perovskite Materials for Object Detection in Complex Environments
Yixin Cao, Yuxiao Fang, Li Yin, et al.
Nano Energy (2025), pp. 110901-110901
Closed Access
IO/IGZO heterojunction artificial synaptic transistors gated by LiZrO solid electrolyte for multifunctional neuromorphic applications
Minghao Zhang, Yan Wang, Hao Liu, et al.
Nanotechnology (2025) Vol. 36, Iss. 18, pp. 185705-185705
Closed Access
High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels
Siwei Wang, Xuemeng Hu, Baifan Qian, et al.
Advanced Electronic Materials (2025)
Open Access
Transparent and biocompatible In2O3 artificial synapses with lactose–citric acid electrolyte for neuromorphic computing
Haiyang Qiu, Dandan Hao, Hui Li, et al.
Applied Physics Letters (2022) Vol. 121, Iss. 18
Closed Access | Times Cited: 16
Artificial synaptic devices based on biomimetic electrochemistry: A review
Ji Hyun Baek, In Hyuk Im, Eun‐Mi Hur, et al.
Materials Research Bulletin (2024) Vol. 176, pp. 112803-112803
Closed Access | Times Cited: 3
Controlled Migration of Lithium Cations by Diamine Bridges in Water‐Processable Polymer‐Based Solid‐State Electrolyte Memory Layers for Organic Synaptic Transistors
Woongki Lee, Taehoon Kim, Hwajeong Kim, et al.
Advanced Materials (2024)
Closed Access | Times Cited: 3
A bi-functional three-terminal memristor applicable as an artificial synapse and neuron
Lingli Liu, Putu Andhita Dananjaya, Calvin Ching Ian Ang, et al.
Nanoscale (2023) Vol. 15, Iss. 42, pp. 17076-17084
Closed Access | Times Cited: 8
Perovskite-based optoelectronic systems for neuromorphic computing
Yixin Cao, Li Yin, Chun Zhao, et al.
Nano Energy (2023) Vol. 120, pp. 109169-109169
Closed Access | Times Cited: 7
Perspective on oxide-based three-terminal artificial synapses in physical neural networks
Kuan‐Ting Chen, Jen‐Sue Chen
Applied Physics Letters (2022) Vol. 121, Iss. 19
Closed Access | Times Cited: 9
Artificial synapses based on boron ions-modulated transistors for neuromorphic applications
Guangtan Miao, Qingliang Liu, Yepeng Shi, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 20
Closed Access | Times Cited: 1
Electro‐Optical InGaZnO Synaptic Transistor with Solid State Electrolyte for Pain Perception
Xiaoqian Li, Xingqi Ji, Xuemei Yin, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures
Dong-Hee Lee, Hwi-Su Kim, Ki-Woong Park, et al.
Biomimetics (2023) Vol. 8, Iss. 5, pp. 432-432
Open Access | Times Cited: 3
Electrostatic Tuning of Ionic Charge in SiO2 Dielectric Thin Films
Isabel Al‐Dhahir, Rachel Kealy, Samira Kelly, et al.
ECS Journal of Solid State Science and Technology (2022) Vol. 11, Iss. 6, pp. 063010-063010
Open Access | Times Cited: 3
Low-Voltage Synaptic Transistors Based on PrOx/ZrO2 Bilayer Dielectric for Neuromorphic Computing
Guangtan Miao, Limeng Chen, Ranran Ci, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 4, pp. 2702-2707
Closed Access
Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application
Yuling Peng, Wei Dou, P. Chen, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 9
Closed Access
Solution-processed LiGdO solid electrolyte for In2O3 synaptic transistor and its application in neuromorphic computing
Yingge Du, Wenlan Xiao, Guangtan Miao, et al.
Journal of Materials Chemistry C (2024)
Closed Access
Defect-engineered hexagonal boron nitride nanosheets as a new atomic-level directional ion conductor
Guoqing Wang, Xiaoyan Luo, Chen Chen, et al.
Ceramics International (2023) Vol. 49, Iss. 14, pp. 23391-23398
Closed Access | Times Cited: 1
High precision of sign language recognition based on In2O3 transistors gated by AlLiO solid electrolyte
Jing Bian, Sunyingyue Geng, Shijie Dong, et al.
Nanotechnology (2023) Vol. 35, Iss. 8, pp. 085201-085201
Closed Access
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