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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Memristor modeling: challenges in theories, simulations, and device variability
Lili Gao, Qingying Ren, Jiawei Sun, et al.
Journal of Materials Chemistry C (2021) Vol. 9, Iss. 47, pp. 16859-16884
Closed Access | Times Cited: 111

Showing 1-25 of 111 citing articles:

Memristor-based neural networks: a bridge from device to artificial intelligence
Zelin Cao, Bai Sun, Guangdong Zhou, et al.
Nanoscale Horizons (2023) Vol. 8, Iss. 6, pp. 716-745
Closed Access | Times Cited: 68
Binary metal oxide-based resistive switching memory devices: A status review
Amitkumar R. Patil, Tukaram D. Dongale, Rajanish K. Kamat, et al.
Materials Today Communications (2023) Vol. 34, pp. 105356-105356
Closed Access | Times Cited: 66
Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing
Tsung‐Kai Su, Wei‐Kai Cheng, Cheng‐Yueh Chen, et al.
ACS Nano (2022) Vol. 16, Iss. 8, pp. 12979-12990
Closed Access | Times Cited: 38
Reconfigurable Low-Power TiO2 Memristor for Integration of Artificial Synapse and Nociceptor
Mousam Charan Sahu, Anjan Kumar Jena, Sameer Kumar Mallik, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 21, pp. 25713-25725
Closed Access | Times Cited: 33
Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor
Jiangqiu Wang, Bai Sun, Guangdong Zhou, et al.
Journal of Alloys and Compounds (2023) Vol. 939, pp. 168761-168761
Closed Access | Times Cited: 23
Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing
Kumar Kaushlendra, Davinder Kaur
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 6, pp. 3362-3372
Closed Access | Times Cited: 22
Slow Migration-Controlled Resistive Switching in Stable Dion–Jacobson Hybrid Perovskites for Flexible Memristive Applications
Mansi Patel, Jeny Gosai, Aziz Lokhandwala, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 1, pp. 587-598
Closed Access | Times Cited: 8
Hysteresis, Rectification, and Relaxation Times of Nanofluidic Pores for Neuromorphic Circuit Applications
Juan Bisquert
Advanced Physics Research (2024) Vol. 3, Iss. 8
Open Access | Times Cited: 8
Synthetic Powder-Based Thin (<0.1 μm) Cs3Bi2Br9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory
Soyeon Kim, Dong-Am Park, Nam‐Gyu Park
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 5, pp. 2388-2395
Closed Access | Times Cited: 32
A Modified SiO2-Based Memristor with Reliable Switching and Multifunctional Synaptic Behaviors
Nasir Ilyas, Chunmei Li, Jinyong Wang, et al.
The Journal of Physical Chemistry Letters (2022) Vol. 13, Iss. 3, pp. 884-893
Closed Access | Times Cited: 31
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
Chaeun Kim, Yunseok Lee, Sunghun Kim, et al.
Materials Science in Semiconductor Processing (2023) Vol. 157, pp. 107314-107314
Closed Access | Times Cited: 21
Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing
Chang-Hsun Huang, Chen-Yuan Weng, Kuan‐Hung Chen, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 21, pp. 25838-25848
Closed Access | Times Cited: 16
Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application
Amitkumar R. Patil, Tukaram D. Dongale, Rupesh S. Pedanekar, et al.
Journal of Colloid and Interface Science (2024) Vol. 669, pp. 444-457
Closed Access | Times Cited: 5
Multi-factor-controlled ReRAM devices and their applications
Bai Sun, Guangdong Zhou, Yu Tian, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 23, pp. 8895-8921
Closed Access | Times Cited: 27
Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues
Fei Qin, Yuxuan Zhang, Han Wook Song, et al.
Materials Advances (2023) Vol. 4, Iss. 8, pp. 1850-1875
Open Access | Times Cited: 15
Emerging higher-order memristors for bio-realistic neuromorphic computing: A review
Rajneesh Chaurasiya, Li‐Chung Shih, Kuan‐Ting Chen, et al.
Materials Today (2023) Vol. 68, pp. 356-376
Open Access | Times Cited: 15
A More Random and Secure Image Encryption Method: A Novel True Random Number Generator Based on W / Ta2O5 / Ag Memristor
Yucheng Wang, Wenjing Duan, Jie Meng, et al.
Journal of Materials Chemistry C (2025)
Closed Access
Evolution of Performance Parameters of Perovskite Solar Cells with Current–Voltage Scan Frequency
Enrique Hernández‐Balaguera, Juan Bisquert
Energy & Fuels (2025)
Closed Access
Development of a SPICE Model for Fabricated PLA/Al/Egg Albumin/Al Memristors Using Joglekar’s Approach
Hirakjyoti Choudhury, Pallab Kumar Gogoi, Ramon van der Knaap, et al.
Electronics (2025) Vol. 14, Iss. 5, pp. 838-838
Open Access
Interface engineering for enhanced memristive devices and neuromorphic computing applications
Ming Xiao, Daozhi Shen, Jijie Huang
International Materials Reviews (2025)
Closed Access
Introduction to neuromorphic functions of memristors: The inductive nature of synapse potentiation
Soyeon Kim, Heyi Zhang, Gonzalo Rivera-Sierra, et al.
Journal of Applied Physics (2025) Vol. 137, Iss. 11
Open Access
Optimization of Developed Memristive Silicon Nanowire using Heuristic Search Algorithms
Hossein Rezaei Estakhroyeh, Mahdiyeh Mehran, Esmat Rashedi
Silicon (2025)
Closed Access
Highly durable and energy‐efficient probabilistic bits based on h‐BN/SnS2 interface for integer factorization
Joon‐Kyu Han, Jun‐Young Park, Shania Rehman, et al.
InfoMat (2025)
Open Access
Low-Variance Memristor-Based Multi-Level Ternary Combinational Logic
Xiaoyuan Wang, Chuan-Tao Dong, Pengfei Zhou, et al.
IEEE Transactions on Circuits and Systems I Regular Papers (2022) Vol. 69, Iss. 6, pp. 2423-2434
Closed Access | Times Cited: 21
Combining negative photoconductivity and resistive switching towards in-memory logic operations
Subham Paramanik, Amlan J. Pal
Nanoscale (2023) Vol. 15, Iss. 10, pp. 5001-5010
Closed Access | Times Cited: 12
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