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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics
Seong‐In Cho, Jae Bum Jeon, Joo Hyung Kim, et al.
Journal of Materials Chemistry C (2021) Vol. 9, Iss. 32, pp. 10243-10253
Closed Access | Times Cited: 32

Showing 1-25 of 32 citing articles:

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing
Yuseong Jang, Junhyeong Park, Jimin Kang, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 4, pp. 1427-1448
Closed Access | Times Cited: 72
Bio‐Inspired 3D Artificial Neuromorphic Circuits
Xuhai Liu, Fengyun Wang, Jie Su, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 22
Closed Access | Times Cited: 70
Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications
Yunchae Jeon, Dong-Hyun Lee, Hocheon Yoo
Coatings (2022) Vol. 12, Iss. 2, pp. 204-204
Open Access | Times Cited: 43
Low-power-consumption and excellent-retention-characteristics carbon nanotube optoelectronic synaptic transistors for flexible artificial visual systems
Dan Zhang, Yinxiao Li, Nianzi Sui, et al.
Applied Materials Today (2024) Vol. 38, pp. 102234-102234
Closed Access | Times Cited: 8
A synaptic transistor with a stacked layer of SiNx and SiO2 deposited from hexamethyldisiloxane/O2
Chong Peng, Yiming Liu, C. X. Yu, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 2
Closed Access | Times Cited: 1
Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations
Ruqi Yang, Lei Yin, Jianguo Lü, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 41, pp. 46866-46875
Closed Access | Times Cited: 35
Artificial Tactile Recognition Enabled by Flexible Low-Voltage Organic Transistors and Low-Power Synaptic Electronics
Xin Wang, Wanlong Lu, Peng Wei, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 43, pp. 48948-48959
Closed Access | Times Cited: 30
BCM Learning Rules Emulated by a-IGZO-Based Photoelectronic Neuromorphic Transistors
Shuo Ke, Chuanyu Fu, Xinhuang Lin, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 8, pp. 4646-4650
Closed Access | Times Cited: 28
Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing
Yixin Zhu, Huiwu Mao, Ying Zhu, et al.
IEEE Electron Device Letters (2022) Vol. 43, Iss. 4, pp. 651-654
Closed Access | Times Cited: 27
IGZO nanofiber photoelectric neuromorphic transistors with indium ratio tuned synaptic plasticity
Yixin Zhu, Baocheng Peng, Li Zhu, et al.
Applied Physics Letters (2022) Vol. 121, Iss. 13
Closed Access | Times Cited: 23
Roll-to-roll gravure printed large-area flexible carbon nanotube synaptic photogating transistor arrays for image recognitions
Suyun Wang, Qinan Wang, Min Li, et al.
Nano Energy (2023) Vol. 115, pp. 108698-108698
Closed Access | Times Cited: 15
Integrated Opto-Synaptic IGZO Transistors for Image Recognition Fabricated at Room Temperature
Shu Ming Qi, Jia Cheng Li, Yudong Xia, et al.
ACS Photonics (2025)
Closed Access
Self-powered multisensory neuromorphic device with auditory and rotational perception integration inspired by the labyrinth of the inner ear
Feiyu Wang, Jia‐Han Zhang, Shuo Ke, et al.
Chemical Engineering Journal (2025), pp. 161620-161620
Closed Access
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs
Seong‐In Cho, Namgyu Woo, Hyun‐Jun Jeong, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 4, pp. 650-653
Closed Access | Times Cited: 10
用于低功率神经形态晶体管的金属氧化物半导体纳米纤维中阳离子比例的合理调整
Haofei Cong, Yu Chang, Ruifu Zhou, et al.
Science China Materials (2023) Vol. 66, Iss. 8, pp. 3251-3260
Open Access | Times Cited: 10
Adaptively Responsive Self-Powered Bionic Auditory Device for Sleep Health Monitoring
Feiyu Wang, Shuo Ke, Jiean Li, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 8, pp. 1348-1351
Closed Access | Times Cited: 8
Triboelectric potential tuned oxide artificial tactile sensory platform with ultra-low power consumption
Xin Li Chen, Xin Huang, Yan Li, et al.
Applied Materials Today (2023) Vol. 36, pp. 102034-102034
Closed Access | Times Cited: 8
Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors
Yue Chen, Weijian Zhang, Yuezhen Lu, et al.
Applied Physics Reviews (2024) Vol. 11, Iss. 4
Closed Access | Times Cited: 2
Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses
Xiao Feng, Yu Zhang, Xinming Zhuang, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 2
In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses
Yuseong Jang, Soo‐Yeon Lee
ACS Applied Electronic Materials (2022) Vol. 5, Iss. 1, pp. 509-519
Closed Access | Times Cited: 12
Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT
Namgyu Woo, Seong‐In Cho, Sang‐Hee Ko Park
Advanced Materials Interfaces (2023) Vol. 10, Iss. 12
Open Access | Times Cited: 6
Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator
Dong‐Hee Kim, Young-Ha Kwon, Nak‐Jin Seong, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 47, pp. 54622-54633
Closed Access | Times Cited: 6
Improvement in energy consumption and operational stability of electrolyte-gated synapse transistors using atomic-layer-deposited HfO2 thin films
Dong‐Hee Kim, Sung‐Min Yoon
Materials Science in Semiconductor Processing (2022) Vol. 153, pp. 107182-107182
Closed Access | Times Cited: 8
Polyvinyl alcohol electrolyte-gated oxide transistors with tetanization activities for neuromorphic computing
You Jie Huang, Jia Kang Di, Yan Li, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 14, pp. 5166-5174
Closed Access | Times Cited: 1
In2O3/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses
S. W. Sun, Minghao Zhang, Jing Bian, et al.
Nanotechnology (2024) Vol. 35, Iss. 36, pp. 365602-365602
Closed Access | Times Cited: 1
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