OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Oxygen relocation during HfO2 ALD on InAs
Giulio D’Acunto, Esko Kokkonen, Payam Shayesteh, et al.
Faraday Discussions (2022) Vol. 236, pp. 71-85
Open Access | Times Cited: 10
Giulio D’Acunto, Esko Kokkonen, Payam Shayesteh, et al.
Faraday Discussions (2022) Vol. 236, pp. 71-85
Open Access | Times Cited: 10
Showing 10 citing articles:
Operando study of HfO2 atomic layer deposition on partially hydroxylated Si(111)
Rosemary Jones, Giulio D’Acunto, Payam Shayesteh, et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024) Vol. 42, Iss. 2
Open Access | Times Cited: 6
Rosemary Jones, Giulio D’Acunto, Payam Shayesteh, et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024) Vol. 42, Iss. 2
Open Access | Times Cited: 6
Bimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO2
Giulio D’Acunto, Roman Tsyshevsky, Payam Shayesteh, et al.
Chemistry of Materials (2023) Vol. 35, Iss. 2, pp. 529-538
Open Access | Times Cited: 11
Giulio D’Acunto, Roman Tsyshevsky, Payam Shayesteh, et al.
Chemistry of Materials (2023) Vol. 35, Iss. 2, pp. 529-538
Open Access | Times Cited: 11
Time evolution of surface species during the ALD of high-k oxide on InAs
Giulio D’Acunto, Payam Shayesteh, Esko Kokkonen, et al.
Surfaces and Interfaces (2023) Vol. 39, pp. 102927-102927
Open Access | Times Cited: 6
Giulio D’Acunto, Payam Shayesteh, Esko Kokkonen, et al.
Surfaces and Interfaces (2023) Vol. 39, pp. 102927-102927
Open Access | Times Cited: 6
Photocatalytic setup for in situ and operando ambient-pressure X-ray photoelectron spectroscopy at MAX IV Laboratory
Alexander Klyushin, Manoj Kumar Ghosalya, Esko Kokkonen, et al.
Journal of Synchrotron Radiation (2023) Vol. 30, Iss. 3, pp. 613-619
Open Access | Times Cited: 5
Alexander Klyushin, Manoj Kumar Ghosalya, Esko Kokkonen, et al.
Journal of Synchrotron Radiation (2023) Vol. 30, Iss. 3, pp. 613-619
Open Access | Times Cited: 5
Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)
Giulio D’Acunto, Rosemary Jones, Lucía Pérez Ramírez, et al.
The Journal of Physical Chemistry C (2022) Vol. 126, Iss. 29, pp. 12210-12221
Open Access | Times Cited: 8
Giulio D’Acunto, Rosemary Jones, Lucía Pérez Ramírez, et al.
The Journal of Physical Chemistry C (2022) Vol. 126, Iss. 29, pp. 12210-12221
Open Access | Times Cited: 8
Ambient pressure x-ray photoelectron spectroscopy study on the initial atomic layer deposition process of platinum
Esko Kokkonen, Heta-Elisa Nieminen, Foqia Rehman, et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024) Vol. 42, Iss. 6
Open Access
Esko Kokkonen, Heta-Elisa Nieminen, Foqia Rehman, et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024) Vol. 42, Iss. 6
Open Access
Time-resolved ambient pressure x-ray photoelectron spectroscopy: advancing the operando study of ALD chemistry
Rosemary Jones, Esko Kokkonen, Calley Eads, et al.
Surface Science (2024), pp. 122656-122656
Open Access
Rosemary Jones, Esko Kokkonen, Calley Eads, et al.
Surface Science (2024), pp. 122656-122656
Open Access
Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires: Interface and Morphology Control for Optoelectronics and Quantum Technologies
S. Fatemeh Mousavi, Yen‐Po Liu, Giulio D’Acunto, et al.
ACS Applied Nano Materials (2022) Vol. 5, Iss. 12, pp. 17919-17927
Open Access | Times Cited: 1
S. Fatemeh Mousavi, Yen‐Po Liu, Giulio D’Acunto, et al.
ACS Applied Nano Materials (2022) Vol. 5, Iss. 12, pp. 17919-17927
Open Access | Times Cited: 1
Пассивация фтором границы раздела оксид/InAs(001)
М.С. Аксенов, В.A. Голяшов, О.Е. Терещенко
Письма в журнал технической физики (2023) Vol. 49, Iss. 5, pp. 6-6
Open Access
М.С. Аксенов, В.A. Голяшов, О.Е. Терещенко
Письма в журнал технической физики (2023) Vol. 49, Iss. 5, pp. 6-6
Open Access
Oxide/InAs(001) interface passivation with fluorine
M. S. Aksenov, Golyashov V.A., Tereshchenko O.E.
Письма в журнал технической физики (2023) Vol. 49, Iss. 3, pp. 4-4
Open Access
M. S. Aksenov, Golyashov V.A., Tereshchenko O.E.
Письма в журнал технической физики (2023) Vol. 49, Iss. 3, pp. 4-4
Open Access
