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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Interlayer coupling and external electric field tunable electronic properties of a 2D type-I α-tellurene/MoS2 heterostructure
Wen-Li Zhang, Dahu Chang, Qiang Gao, et al.
Journal of Materials Chemistry C (2018) Vol. 6, Iss. 38, pp. 10256-10262
Closed Access | Times Cited: 63

Showing 1-25 of 63 citing articles:

Stacking impact on the optical and electronic properties of two-dimensional MoSe2/PtS2 heterostructures formed by PtS2 and MoSe2 monolayers
Ali Obies Muhsen Almayyali, Bahjat B. Kadhim, Hamad Rahman Jappor
Chemical Physics (2020) Vol. 532, pp. 110679-110679
Closed Access | Times Cited: 74
Surface modification of titanium carbide MXene monolayers (Ti2C and Ti3C2) via chalcogenide and halogenide atoms
Mehrdad Faraji, A. Bafekry, Mohamed M. Fadlallah, et al.
Physical Chemistry Chemical Physics (2021) Vol. 23, Iss. 28, pp. 15319-15328
Open Access | Times Cited: 65
Computational understanding of the structural and electronic properties of the GeS–graphene contact
Hong Chen, Jinfeng Zhao, Jindou Huang, et al.
Physical Chemistry Chemical Physics (2019) Vol. 21, Iss. 14, pp. 7447-7453
Closed Access | Times Cited: 67
Tuning the electronic and optical properties of Type-I PbI2/α-tellurene van der Waals heterostructure via biaxial strain and external electric field
Mohammed M. Obeid
Applied Surface Science (2019) Vol. 508, pp. 144824-144824
Closed Access | Times Cited: 59
Electric gating and interlayer coupling controllable electronic structure and Schottky contact of graphene/ BiI3 van der Waals heterostructure
Chương V. Nguyen
Physical review. B./Physical review. B (2021) Vol. 103, Iss. 11
Closed Access | Times Cited: 55
Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures
Xiaolin Cai, Xiaoyu Han, Chunxiang Zhao, et al.
Journal of Semiconductors (2020) Vol. 41, Iss. 8, pp. 081002-081002
Closed Access | Times Cited: 51
Thermoelectric generation via tellurene for wearable applications: recent advances, research challenges, and future perspectives
E. Liu, Ayman Negm, Matiar M. R. Howlader
Materials Today Energy (2021) Vol. 20, pp. 100625-100625
Closed Access | Times Cited: 51
A two-dimensional MoSe2/MoSi2N4 van der Waals heterostructure with high carrier mobility and diversified regulation of its electronic properties
Xiaolin Cai, Zhengwen Zhang, Yingying Zhu, et al.
Journal of Materials Chemistry C (2021) Vol. 9, Iss. 31, pp. 10073-10083
Closed Access | Times Cited: 48
Thickness-dependent polaron crossover in tellurene
Kunyan Zhang, Chu-Liang Fu, Shelly D. Kelly, et al.
Science Advances (2025) Vol. 11, Iss. 2
Open Access
Semiconductor-to-metal transition in 2D ferroelectric In2Se3/Te heterobilayers: applications for non‐volatile memory devices
Zhuang Ma, J Li, Hongquan Song, et al.
Journal of Physics D Applied Physics (2025) Vol. 58, Iss. 15, pp. 155303-155303
Closed Access
RETRACTED: Tunable electronic and optical properties of 2D PtS2/MoS2 van der Waals heterostructure
Ali Obies Muhsen Almayyali, Bahjat B. Kadhim, Hamad Rahman Jappor
Physica E Low-dimensional Systems and Nanostructures (2019) Vol. 118, pp. 113866-113866
Closed Access | Times Cited: 42
Type-I band alignment of BX–ZnO (X = As, P) van der Waals heterostructures as high-efficiency water splitting photocatalysts: a first-principles study
Thi-Nga Do, M. Idrees, Nguyễn Thị Thanh Bình, et al.
RSC Advances (2020) Vol. 10, Iss. 72, pp. 44545-44550
Open Access | Times Cited: 34
A novel Hf2CO2/WS2 van der Waals heterostructure as a potential candidate for overall water splitting photocatalyst
Bao Zhu, Fusheng Zhang, Jian Qiu, et al.
Materials Science in Semiconductor Processing (2021) Vol. 133, pp. 105947-105947
Closed Access | Times Cited: 29
Controlling electronic properties of PtS2/InSe van der Waals heterostructure via external electric field and vertical strain
Chuong V. Nguyen, H.D. Bui, Trinh Duy Nguyen, et al.
Chemical Physics Letters (2019) Vol. 724, pp. 1-7
Closed Access | Times Cited: 32
Two-dimensional Janus-In2STe/InSe heterostructure with direct gap and staggered band alignment
Xueping Li, Baoxing Zhai, Xiaohui Song, et al.
Applied Surface Science (2020) Vol. 509, pp. 145317-145317
Closed Access | Times Cited: 29
Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices
Son‐Tung Nguyen, Cuong Q. Nguyen, Nguyen N. Hieu, et al.
Langmuir (2023) Vol. 39, Iss. 48, pp. 17251-17260
Closed Access | Times Cited: 10
A design rule for two-dimensional van der Waals heterostructures with unconventional band alignments
Yuan Si, Hongyu Wu, Ji‐Chun Lian, et al.
Physical Chemistry Chemical Physics (2020) Vol. 22, Iss. 5, pp. 3037-3047
Closed Access | Times Cited: 24
Atomistic manipulation of interfacial properties in HfN2/MoTe2 van der Waals heterostructure via strain and electric field for next generation multifunctional nanodevice and energy conversion
Manish Kumar Mohanta, Ashima Rawat, Abir De Sarkar
Applied Surface Science (2021) Vol. 568, pp. 150928-150928
Closed Access | Times Cited: 20
Reconfigurable band alignment of m−GaS/n−XTe2 ( X=Mo , W) multilayer van der Waals …
Xueping Li, Ting Liu, Lin Li, et al.
Physical review. B./Physical review. B (2022) Vol. 106, Iss. 12
Closed Access | Times Cited: 15
Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi2Se3/MoS2 2D Heterostructures
Zachariah Hennighausen, Christopher Lane, Abdelkrim Benabbas, et al.
ACS Applied Materials & Interfaces (2019) Vol. 11, Iss. 17, pp. 15913-15921
Open Access | Times Cited: 24
Atomically thin van der Waals tunnel field-effect transistors and its potential for applications
Shih‐Hsien Yang, You-Teng Yao, Yong Xu, et al.
Nanotechnology (2018) Vol. 30, Iss. 10, pp. 105201-105201
Closed Access | Times Cited: 22
A type-II C2N/α-Te van der Waals heterojunction with improved optical properties by external perturbation
Zhuang Ma, Yusheng Wang, Yuting Wei, et al.
Physical Chemistry Chemical Physics (2019) Vol. 21, Iss. 39, pp. 21753-21760
Closed Access | Times Cited: 21
Emerging negative differential resistance effects and novel tunable electronic behaviors of the broken-gap KAgSe/SiC2 van der Waals heterojunction
Qiang Wang, Yan Liang, Hui Yao, et al.
Journal of Materials Chemistry C (2020) Vol. 8, Iss. 24, pp. 8107-8119
Closed Access | Times Cited: 20
Structural, electronic, optical, thermoelectric and photocatalytic properties of SiS/MXenes van der Waals heterostructures
Aqsa Abid, M. Idrees, H. U. Din, et al.
Materials Today Communications (2020) Vol. 26, pp. 101702-101702
Closed Access | Times Cited: 20
Optoelectronic and photocatalytic properties of GaN, GeS and SiS monolayers and their vdW heterostructures
Aqsa Abid, Muhammad Haneef, Sajjad Ali, et al.
Journal of Physics and Chemistry of Solids (2021) Vol. 161, pp. 110433-110433
Closed Access | Times Cited: 17
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