
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Ultrafast non-volatile flash memory based on van der Waals heterostructures
Lan Liu, Chunsen Liu, Lilai Jiang, et al.
Nature Nanotechnology (2021) Vol. 16, Iss. 8, pp. 874-881
Open Access | Times Cited: 184
Lan Liu, Chunsen Liu, Lilai Jiang, et al.
Nature Nanotechnology (2021) Vol. 16, Iss. 8, pp. 874-881
Open Access | Times Cited: 184
Showing 1-25 of 184 citing articles:
2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges
Phuong V. Pham, Srikrishna Chanakya Bodepudi, Khurram Shehzad, et al.
Chemical Reviews (2022) Vol. 122, Iss. 6, pp. 6514-6613
Open Access | Times Cited: 395
Phuong V. Pham, Srikrishna Chanakya Bodepudi, Khurram Shehzad, et al.
Chemical Reviews (2022) Vol. 122, Iss. 6, pp. 6514-6613
Open Access | Times Cited: 395
Two-dimensional devices and integration towards the silicon lines
Shuiyuan Wang, Xiaoxian Liu, Mingsheng Xu, et al.
Nature Materials (2022) Vol. 21, Iss. 11, pp. 1225-1239
Closed Access | Times Cited: 194
Shuiyuan Wang, Xiaoxian Liu, Mingsheng Xu, et al.
Nature Materials (2022) Vol. 21, Iss. 11, pp. 1225-1239
Closed Access | Times Cited: 194
The Road for 2D Semiconductors in the Silicon Age
Shuiyuan Wang, Xiaoxian Liu, Peng Zhou
Advanced Materials (2021) Vol. 34, Iss. 48
Closed Access | Times Cited: 144
Shuiyuan Wang, Xiaoxian Liu, Peng Zhou
Advanced Materials (2021) Vol. 34, Iss. 48
Closed Access | Times Cited: 144
Programmable black phosphorus image sensor for broadband optoelectronic edge computing
Seokhyeong Lee, Ruoming Peng, Changming Wu, et al.
Nature Communications (2022) Vol. 13, Iss. 1
Open Access | Times Cited: 139
Seokhyeong Lee, Ruoming Peng, Changming Wu, et al.
Nature Communications (2022) Vol. 13, Iss. 1
Open Access | Times Cited: 139
Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device
Xingxia Sun, Chenguang Zhu, Jiali Yi, et al.
Nature Electronics (2022) Vol. 5, Iss. 11, pp. 752-760
Closed Access | Times Cited: 109
Xingxia Sun, Chenguang Zhu, Jiali Yi, et al.
Nature Electronics (2022) Vol. 5, Iss. 11, pp. 752-760
Closed Access | Times Cited: 109
2D semiconductors for specific electronic applications: from device to system
Xiaohe Huang, Chunsen Liu, Peng Zhou
npj 2D Materials and Applications (2022) Vol. 6, Iss. 1
Open Access | Times Cited: 107
Xiaohe Huang, Chunsen Liu, Peng Zhou
npj 2D Materials and Applications (2022) Vol. 6, Iss. 1
Open Access | Times Cited: 107
Review of Semiconductor Flash Memory Devices for Material and Process Issues
Seung Soo Kim, Soo Kyeom Yong, Wha-Young Kim, et al.
Advanced Materials (2022) Vol. 35, Iss. 43
Closed Access | Times Cited: 104
Seung Soo Kim, Soo Kyeom Yong, Wha-Young Kim, et al.
Advanced Materials (2022) Vol. 35, Iss. 43
Closed Access | Times Cited: 104
Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics
Seokho Moon, Jiye Kim, Jeonghyeon Park, et al.
Advanced Materials (2022) Vol. 35, Iss. 4
Closed Access | Times Cited: 98
Seokho Moon, Jiye Kim, Jeonghyeon Park, et al.
Advanced Materials (2022) Vol. 35, Iss. 4
Closed Access | Times Cited: 98
Porous crystalline materials for memories and neuromorphic computing systems
Guanglong Ding, Jiyu Zhao, Kui Zhou, et al.
Chemical Society Reviews (2023) Vol. 52, Iss. 20, pp. 7071-7136
Closed Access | Times Cited: 92
Guanglong Ding, Jiyu Zhao, Kui Zhou, et al.
Chemical Society Reviews (2023) Vol. 52, Iss. 20, pp. 7071-7136
Closed Access | Times Cited: 92
Programmable van‐der‐Waals heterostructure‐enabled optoelectronic synaptic floating‐gate transistors with ultra‐low energy consumption
Yilin Sun, Mingjie Li, Yingtao Ding, et al.
InfoMat (2022) Vol. 4, Iss. 10
Open Access | Times Cited: 89
Yilin Sun, Mingjie Li, Yingtao Ding, et al.
InfoMat (2022) Vol. 4, Iss. 10
Open Access | Times Cited: 89
Electronic/Optoelectronic Memory Device Enabled by Tellurium‐based 2D van der Waals Heterostructure for in‐Sensor Reservoir Computing at the Optical Communication Band
Jiajia Zha, Shuhui Shi, Apoorva Chaturvedi, et al.
Advanced Materials (2023) Vol. 35, Iss. 20
Closed Access | Times Cited: 84
Jiajia Zha, Shuhui Shi, Apoorva Chaturvedi, et al.
Advanced Materials (2023) Vol. 35, Iss. 20
Closed Access | Times Cited: 84
Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
Yuting Huang, Nian‐Ke Chen, Zhen‐Ze Li, et al.
InfoMat (2022) Vol. 4, Iss. 8
Open Access | Times Cited: 72
Yuting Huang, Nian‐Ke Chen, Zhen‐Ze Li, et al.
InfoMat (2022) Vol. 4, Iss. 8
Open Access | Times Cited: 72
Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations
Ghulam Dastgeer, Sobia Nisar, Aamir Rasheed, et al.
Nano Energy (2023) Vol. 119, pp. 109106-109106
Closed Access | Times Cited: 58
Ghulam Dastgeer, Sobia Nisar, Aamir Rasheed, et al.
Nano Energy (2023) Vol. 119, pp. 109106-109106
Closed Access | Times Cited: 58
Manufacturing of graphene based synaptic devices for optoelectronic applications
Kui Zhou, Ziqi Jia, Xinqi Ma, et al.
International Journal of Extreme Manufacturing (2023) Vol. 5, Iss. 4, pp. 042006-042006
Open Access | Times Cited: 56
Kui Zhou, Ziqi Jia, Xinqi Ma, et al.
International Journal of Extreme Manufacturing (2023) Vol. 5, Iss. 4, pp. 042006-042006
Open Access | Times Cited: 56
An ultrafast bipolar flash memory for self-activated in-memory computing
Xiaohe Huang, Chunsen Liu, Zhaowu Tang, et al.
Nature Nanotechnology (2023) Vol. 18, Iss. 5, pp. 486-492
Closed Access | Times Cited: 48
Xiaohe Huang, Chunsen Liu, Zhaowu Tang, et al.
Nature Nanotechnology (2023) Vol. 18, Iss. 5, pp. 486-492
Closed Access | Times Cited: 48
Two-dimensional materials for future information technology: status and prospects
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits
Lei Yin, Ruiqing Cheng, J. Ding, et al.
ACS Nano (2024) Vol. 18, Iss. 11, pp. 7739-7768
Closed Access | Times Cited: 24
Lei Yin, Ruiqing Cheng, J. Ding, et al.
ACS Nano (2024) Vol. 18, Iss. 11, pp. 7739-7768
Closed Access | Times Cited: 24
Resistive Memory Devices at the Thinnest Limit: Progress and Challenges
Xiaodong Li, Nian‐Ke Chen, Bai‐Qian Wang, et al.
Advanced Materials (2024) Vol. 36, Iss. 15
Closed Access | Times Cited: 21
Xiaodong Li, Nian‐Ke Chen, Bai‐Qian Wang, et al.
Advanced Materials (2024) Vol. 36, Iss. 15
Closed Access | Times Cited: 21
Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region
Yuyan Zhu, Yang Wang, Xingchen Pang, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 19
Yuyan Zhu, Yang Wang, Xingchen Pang, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 19
Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate
Zhu Tao, Kai Liu, Yao Zhang, et al.
ACS Nano (2024) Vol. 18, Iss. 17, pp. 11462-11473
Closed Access | Times Cited: 18
Zhu Tao, Kai Liu, Yao Zhang, et al.
ACS Nano (2024) Vol. 18, Iss. 17, pp. 11462-11473
Closed Access | Times Cited: 18
Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications
Yilin Sun, Huaipeng Wang, Dan Xie
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 15
Yilin Sun, Huaipeng Wang, Dan Xie
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 15
Two-Dimensional Materials for Brain-Inspired Computing Hardware
Shreyash Hadke, Min‐A Kang, Vinod K. Sangwan, et al.
Chemical Reviews (2025)
Closed Access | Times Cited: 2
Shreyash Hadke, Min‐A Kang, Vinod K. Sangwan, et al.
Chemical Reviews (2025)
Closed Access | Times Cited: 2
Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems
Xiaodong Yan, Justin H. Qian, Vinod K. Sangwan, et al.
Advanced Materials (2021) Vol. 34, Iss. 48
Closed Access | Times Cited: 86
Xiaodong Yan, Justin H. Qian, Vinod K. Sangwan, et al.
Advanced Materials (2021) Vol. 34, Iss. 48
Closed Access | Times Cited: 86
Neuromorphic computing: Devices, hardware, and system application facilitated by two-dimensional materials
Jihong Bian, Zhenyuan Cao, Peng Zhou
Applied Physics Reviews (2021) Vol. 8, Iss. 4
Closed Access | Times Cited: 68
Jihong Bian, Zhenyuan Cao, Peng Zhou
Applied Physics Reviews (2021) Vol. 8, Iss. 4
Closed Access | Times Cited: 68
Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
Arnab Pal, Shuo Zhang, Tanmay Chavan, et al.
Advanced Materials (2022) Vol. 35, Iss. 27
Open Access | Times Cited: 63
Arnab Pal, Shuo Zhang, Tanmay Chavan, et al.
Advanced Materials (2022) Vol. 35, Iss. 27
Open Access | Times Cited: 63