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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Quantum engineering of transistors based on 2D materials heterostructures
Giuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Nature Nanotechnology (2018) Vol. 13, Iss. 3, pp. 183-191
Open Access | Times Cited: 388

Showing 1-25 of 388 citing articles:

Graphene and two-dimensional materials for silicon technology
Deji Akinwande, Cedric Huyghebaert, Ching-Hua Wang, et al.
Nature (2019) Vol. 573, Iss. 7775, pp. 507-518
Closed Access | Times Cited: 1314
Transistors based on two-dimensional materials for future integrated circuits
Saptarshi Das, Amritanand Sebastian, Eric Pop, et al.
Nature Electronics (2021) Vol. 4, Iss. 11, pp. 786-799
Closed Access | Times Cited: 623
Production and processing of graphene and related materials
Claudia Backes, Amr M. Abdelkader, Concepción Alonso, et al.
2D Materials (2020) Vol. 7, Iss. 2, pp. 022001-022001
Open Access | Times Cited: 426
2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges
Phuong V. Pham, Srikrishna Chanakya Bodepudi, Khurram Shehzad, et al.
Chemical Reviews (2022) Vol. 122, Iss. 6, pp. 6514-6613
Open Access | Times Cited: 395
Two-dimensional conjugated metal–organic frameworks (2D c-MOFs): chemistry and function for MOFtronics
Mingchao Wang, Renhao Dong⧫, Xinliang Feng
Chemical Society Reviews (2021) Vol. 50, Iss. 4, pp. 2764-2793
Open Access | Times Cited: 378
Metrology for the next generation of semiconductor devices
Ndubuisi G. Orji, Mustafa Badaroglu, Brian M. Barnes, et al.
Nature Electronics (2018) Vol. 1, Iss. 10, pp. 532-547
Open Access | Times Cited: 349
Logic-in-memory based on an atomically thin semiconductor
Guilherme Migliato Marega, Yanfei Zhao, Ahmet Avşar, et al.
Nature (2020) Vol. 587, Iss. 7832, pp. 72-77
Open Access | Times Cited: 338
Nonvolatile Memories Based on Graphene and Related 2D Materials
Simone Bertolazzi, Paolo Bondavalli, Stephan Roche, et al.
Advanced Materials (2019) Vol. 31, Iss. 10
Open Access | Times Cited: 270
Engineered 2D Transition Metal Dichalcogenides—A Vision of Viable Hydrogen Evolution Reaction Catalysis
Liangxu Lin, Peter C. Sherrell, Yuqing Liu, et al.
Advanced Energy Materials (2020) Vol. 10, Iss. 16
Open Access | Times Cited: 269
Progress and Prospects in Transition-Metal Dichalcogenide Research Beyond 2D
Tomojit Chowdhury, Erick C. Sadler, Thomas J. Kempa
Chemical Reviews (2020) Vol. 120, Iss. 22, pp. 12563-12591
Closed Access | Times Cited: 242
High-performance sub-10 nm monolayer Bi2O2Se transistors
Ruge Quhe, Junchen Liu, Jinxiong Wu, et al.
Nanoscale (2018) Vol. 11, Iss. 2, pp. 532-540
Closed Access | Times Cited: 215
Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility
Tong Yu, Ziyuan Zhao, Yuanhui Sun, et al.
Journal of the American Chemical Society (2019) Vol. 141, Iss. 4, pp. 1599-1605
Closed Access | Times Cited: 162
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
Maheswari Sivan, Yida Li, Hasita Veluri, et al.
Nature Communications (2019) Vol. 10, Iss. 1
Open Access | Times Cited: 152
Solution-processed two-dimensional materials for next-generation photovoltaics
Sebastiano Bellani, Antonino Bartolotta, Antonio Agresti, et al.
Chemical Society Reviews (2021) Vol. 50, Iss. 21, pp. 11870-11965
Open Access | Times Cited: 141
Sub-10 nm two-dimensional transistors: Theory and experiment
Ruge Quhe, Lin Xu, Shiqi Liu, et al.
Physics Reports (2021) Vol. 938, pp. 1-72
Closed Access | Times Cited: 127
Electrostatic gating and intercalation in 2D materials
Yecun Wu, Danfeng Li, Chun-Lan Wu, et al.
Nature Reviews Materials (2022) Vol. 8, Iss. 1, pp. 41-53
Open Access | Times Cited: 119
2D/2D Heterostructures: Rational Design for Advanced Batteries and Electrocatalysis
Jun Mei, Ting Liao, Ziqi Sun
Energy & environment materials (2021) Vol. 5, Iss. 1, pp. 115-132
Open Access | Times Cited: 107
The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms
Yang Shen, Zuoyuan Dong, Yabin Sun, et al.
Advanced Materials (2022) Vol. 34, Iss. 48
Closed Access | Times Cited: 82
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Theresia Knobloch, Burkay Uzlu, Yu. Yu. Illarionov, et al.
Nature Electronics (2022) Vol. 5, Iss. 6, pp. 356-366
Open Access | Times Cited: 78
Stack growth of wafer-scale van der Waals superconductor heterostructures
Zhenjia Zhou, Fuchen Hou, Xianlei Huang, et al.
Nature (2023) Vol. 621, Iss. 7979, pp. 499-505
Closed Access | Times Cited: 67
Helical Bilayer Nanographenes: Impact of the Helicene Length on the Structural, Electrochemical, Photophysical, and Chiroptical Properties
Patricia Izquierdo‐García, Jesús M. Fernández‐García, Samara Medina Rivero, et al.
Journal of the American Chemical Society (2023) Vol. 145, Iss. 21, pp. 11599-11610
Open Access | Times Cited: 53
Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study
Hengze Qu, Shengli Zhang, Jiang Cao, et al.
Science Bulletin (2024) Vol. 69, Iss. 10, pp. 1427-1436
Closed Access | Times Cited: 18
Magnetoresistance in 2D Magnetic Materials: From Fundamentals to Applications
Muhammad Younis, Muhammad Abdullah, Sichao Dai, et al.
Advanced Functional Materials (2025)
Closed Access | Times Cited: 3
Entanglement engineering of optomechanical systems by reinforcement learning
Lili Ye, Christian Arenz, Joseph M. Lukens, et al.
APL Machine Learning (2025) Vol. 3, Iss. 1
Open Access | Times Cited: 2
Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
Yee Sin Ang, Hui Ying Yang, L. K. Ang
Physical Review Letters (2018) Vol. 121, Iss. 5
Open Access | Times Cited: 147
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