
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge
Jaeseoung Park, Ashwani Kumar, Yucheng Zhou, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 24
Jaeseoung Park, Ashwani Kumar, Yucheng Zhou, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 24
Showing 24 citing articles:
Correlation between linear conductance variability and accuracy in neuromorphic computing using AuNP-DNA/HfO2 bilayer memristor devices
Myoungsu Chae, Doowon Lee, H.W. Lee, et al.
Measurement (2025), pp. 116960-116960
Closed Access | Times Cited: 1
Myoungsu Chae, Doowon Lee, H.W. Lee, et al.
Measurement (2025), pp. 116960-116960
Closed Access | Times Cited: 1
Threshold trigger embedded gas sensor for low-power and real-time atmospheric NO2 monitoring using drones
Myoungsu Chae, IkGeun Kwon, Doowon Lee, et al.
Chemical Engineering Journal (2025), pp. 160605-160605
Closed Access | Times Cited: 1
Myoungsu Chae, IkGeun Kwon, Doowon Lee, et al.
Chemical Engineering Journal (2025), pp. 160605-160605
Closed Access | Times Cited: 1
Sophisticated Conductance Control and Multiple Synapse Functions in TiO2‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems
Hyojin So, Hyeonseung Ji, Sungjun Kim, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 4
Hyojin So, Hyeonseung Ji, Sungjun Kim, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 4
Exploring Multilevel Properties of GeTe-Based Phase Change Memory Devices for Programmable Synaptic Activity
Amiya Mishra, Anushmita Pathak, Shivendra Kumar Pandey
ACS Applied Electronic Materials (2025)
Closed Access
Amiya Mishra, Anushmita Pathak, Shivendra Kumar Pandey
ACS Applied Electronic Materials (2025)
Closed Access
Kelvin Probe Force Microscopy Imaging of Plasticity in Hydrogenated Perovskite Nickelate Multilevel Neuromorphic Devices
Tamal Dey, Xinyuan Lai, Sukriti Manna, et al.
ACS Nano (2025)
Closed Access
Tamal Dey, Xinyuan Lai, Sukriti Manna, et al.
ACS Nano (2025)
Closed Access
Enhancing Stability and Performance of Conductive Bridge Random Access Memory: Use of a Copper-Doped ZnO Nanorod-Embedded Switching Layer
Po‐Tsun Liu, Yu-Chuan Chiu, Chih-Chieh Hsu, et al.
ACS Applied Materials & Interfaces (2025)
Open Access
Po‐Tsun Liu, Yu-Chuan Chiu, Chih-Chieh Hsu, et al.
ACS Applied Materials & Interfaces (2025)
Open Access
2D Vacancy Confinement in Anatase TiO2 for Enhanced Photocatalytic Activities
Minhan Yoon, Yunkyu Park, Hyeji Sim, et al.
Advanced Materials (2025)
Closed Access
Minhan Yoon, Yunkyu Park, Hyeji Sim, et al.
Advanced Materials (2025)
Closed Access
Evaluation of fluxon synapse device based on superconducting loops for energy efficient neuromorphic computing
Ashwani Kumar, Uday S. Goteti, Ertugrul Cubukcu, et al.
Frontiers in Neuroscience (2025) Vol. 19
Open Access
Ashwani Kumar, Uday S. Goteti, Ertugrul Cubukcu, et al.
Frontiers in Neuroscience (2025) Vol. 19
Open Access
Piezotronics and Tribotronics of 2D Materials
Yi-Fei Wang, Qijun Sun, Zhong Lin Wang
Materials Science and Engineering R Reports (2025) Vol. 164, pp. 100951-100951
Closed Access
Yi-Fei Wang, Qijun Sun, Zhong Lin Wang
Materials Science and Engineering R Reports (2025) Vol. 164, pp. 100951-100951
Closed Access
Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing
Ming Xiao, Markus Hellenbrand, Nives Strkalj, et al.
Advanced Functional Materials (2025)
Open Access
Ming Xiao, Markus Hellenbrand, Nives Strkalj, et al.
Advanced Functional Materials (2025)
Open Access
Temperature-dependent random telegraph signal in Co/CoO/Co point contact devices
Zhongyang Ren, Muchan Li, Jiaojiao Tian, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 8
Closed Access
Zhongyang Ren, Muchan Li, Jiaojiao Tian, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 8
Closed Access
Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics
Adiba Adiba, Ph. Nonglen Meitei, Tufail Ahmad
Scientific Reports (2025) Vol. 15, Iss. 1
Open Access
Adiba Adiba, Ph. Nonglen Meitei, Tufail Ahmad
Scientific Reports (2025) Vol. 15, Iss. 1
Open Access
Lowering Off Current in Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-Based Resistive Random Access Memory By Modulating Molecular Orientation and Doping Levels
Yeunwoo Kwon, Jeong Han Song, Yeon Jun Kim, et al.
ACS Applied Electronic Materials (2025)
Open Access
Yeunwoo Kwon, Jeong Han Song, Yeon Jun Kim, et al.
ACS Applied Electronic Materials (2025)
Open Access
Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides
Donghyeon Lee, Seung Mo Kim, Jun-Cheol Park, et al.
Applied Surface Science (2024), pp. 161216-161216
Closed Access | Times Cited: 3
Donghyeon Lee, Seung Mo Kim, Jun-Cheol Park, et al.
Applied Surface Science (2024), pp. 161216-161216
Closed Access | Times Cited: 3
Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer
Jihee Park, Hyuk‐Jae Jang, Yongjin Byun, et al.
Chaos Solitons & Fractals (2024) Vol. 191, pp. 115910-115910
Closed Access | Times Cited: 1
Jihee Park, Hyuk‐Jae Jang, Yongjin Byun, et al.
Chaos Solitons & Fractals (2024) Vol. 191, pp. 115910-115910
Closed Access | Times Cited: 1
Oxygen vacancies kinetics in TaO$_{2-h}$/Ta$_2$O$_{5-x}$ memristive interfaces
C. Ferreyra, Rodrigo Leal Martir, D. Rubi, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 49, pp. 495307-495307
Open Access
C. Ferreyra, Rodrigo Leal Martir, D. Rubi, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 49, pp. 495307-495307
Open Access
Influence of TiN diffusion barrier on the leakage current and ferroelectricity in Al-doped HfOx ferroelectric tunneling junction and its application to neuromorphic computing
Eunjin Lim, Euncho Seo, Sungjun Kim
Nanoscale (2024) Vol. 16, Iss. 41, pp. 19445-19452
Closed Access
Eunjin Lim, Euncho Seo, Sungjun Kim
Nanoscale (2024) Vol. 16, Iss. 41, pp. 19445-19452
Closed Access
Localized Conduction Channels in Memristors
Kyung Seok Woo, R. Stanley Williams, Suhas Kumar
Chemical Reviews (2024)
Closed Access
Kyung Seok Woo, R. Stanley Williams, Suhas Kumar
Chemical Reviews (2024)
Closed Access
Energy Efficient Implementation of MVM Operations Using Filament-Free Bulk RRAM Array
Ashwani Kumar, Jaeseoung Park, Yucheng Zhou, et al.
(2024) Vol. 51, pp. 1-5
Closed Access
Ashwani Kumar, Jaeseoung Park, Yucheng Zhou, et al.
(2024) Vol. 51, pp. 1-5
Closed Access
Bio-plausible Learning-on-Chip with Selector-less Memristive Crossbars
Jeong-Hoon Kim, Soumil Jain, Gopabandhu Hota, et al.
2022 IEEE International Symposium on Circuits and Systems (ISCAS) (2024), pp. 1-5
Closed Access
Jeong-Hoon Kim, Soumil Jain, Gopabandhu Hota, et al.
2022 IEEE International Symposium on Circuits and Systems (ISCAS) (2024), pp. 1-5
Closed Access
Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction
Yoon‐Seok Lee, Beomki Jeon, Youngboo Cho, et al.
Advanced Materials Technologies (2024)
Closed Access
Yoon‐Seok Lee, Beomki Jeon, Youngboo Cho, et al.
Advanced Materials Technologies (2024)
Closed Access
Perspective: Entropy-stabilized oxide memristors
Sieun Chae, Sangmin Yoo, Emmanouil Kioupakis, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 7
Open Access
Sieun Chae, Sangmin Yoo, Emmanouil Kioupakis, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 7
Open Access
Effect of SiO2 Interfacial Layer on InGaZnO-Based Memristors for Neuromorphic Computing Applications
Seung Joo Myoung, Donghyeop Shin, Donguk Kim, et al.
Ceramics International (2024)
Closed Access
Seung Joo Myoung, Donghyeop Shin, Donguk Kim, et al.
Ceramics International (2024)
Closed Access
Forward-Forward Learning Exploiting Low-Voltage Reset of RRAM
B. Imbert, Adrien Renaudineau, Mamadou Mamarou Diallo, et al.
2021 IEEE International Electron Devices Meeting (IEDM) (2024), pp. 1-4
Closed Access
B. Imbert, Adrien Renaudineau, Mamadou Mamarou Diallo, et al.
2021 IEEE International Electron Devices Meeting (IEDM) (2024), pp. 1-4
Closed Access