Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric
Jiabiao Chen, Zhaochao Liu, Xinyue Dong, et al.
Nature Communications (2023) Vol. 14, Iss. 1
Open Access | Times Cited: 31

Showing 1-25 of 31 citing articles:

Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics
Jiashuai Yuan, Chuanyong Jian, Zhihui Shang, et al.
Nature Communications (2025) Vol. 16, Iss. 1
Open Access | Times Cited: 2
Ionic polarization modulation for wide-bandgap high-κ 2D insulators
Yunseok Choi, Seung‐Il Kim, Sang‐Hoon Bae
Nature Materials (2025)
Closed Access | Times Cited: 2
2D Free‐Standing GeS1−xSex with Composition‐Tunable Bandgap for Tailored Polarimetric Optoelectronics
Tao Zheng, Yuan Pan, Mengmeng Yang, et al.
Advanced Materials (2024) Vol. 36, Iss. 28
Closed Access | Times Cited: 11
Dielectric Regulation in Quasi‐vdW Europium Oxysulfur Compounds by Compositional Engineering for 2D Electronics
Chuanyong Jian, Jiashuai Yuan, Wenting Hong, et al.
Advanced Materials (2025)
Closed Access | Times Cited: 1
Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses
Lei Zhang, Zhaochao Liu, Wei Ai, et al.
Nature Electronics (2024) Vol. 7, Iss. 8, pp. 662-670
Closed Access | Times Cited: 6
Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit
Yeon Ho Kim, Wei Jiang, Donghun Lee, et al.
Advanced Materials (2024) Vol. 36, Iss. 29
Closed Access | Times Cited: 5
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
Jing Chen, Mingyuan Sun, Zhenhua Wang, et al.
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 5
Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors
Weiting Xu, Jiayang Jiang, Yujia Chen, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 5
High-κ monocrystalline dielectrics for low-power two-dimensional electronics
Lei Yin, Ruiqing Cheng, Xuhao Wan, et al.
Nature Materials (2024)
Closed Access | Times Cited: 5
Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer
Xinyue Dong, Yuyu He, Yue Guan, et al.
Science China Materials (2024) Vol. 67, Iss. 3, pp. 906-913
Open Access | Times Cited: 4
Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2
Jung Ho Kim, Byoung Hee Moon, Gang Hee Han
Applied Physics Letters (2024) Vol. 124, Iss. 12
Open Access | Times Cited: 4
Controllable Synthesis of Transferable Ultrathin Bi2Ge(Si)O5 Dielectric Alloys with Composition-Tunable High-κ Properties
Jiabiao Chen, Zhaochao Liu, Zunxian Lv, et al.
Journal of the American Chemical Society (2024)
Closed Access | Times Cited: 4
Coupling Strategies of Multi‐Physical Fields in 2D Materials‐Based Photodetectors
Ruofei Xing, Xinglong Zhang, Xueshuo Fan, et al.
Advanced Materials (2025)
Closed Access
2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors
Xiulian Fan, Jiali Yi, Bin Deng, et al.
Nature Communications (2025) Vol. 16, Iss. 1
Open Access
Low‐Temperature Controlled Growth of 2D LaOCl with Enhanced Dielectric Properties for Advanced Electronics
Zhipeng Fu, Chuanyong Jian, Yao Yu, et al.
Advanced Functional Materials (2025)
Closed Access
CMOS-Compatible Fabrication of 2D Semiconductor-Based CFETs via High-k Dielectric van der Waals Encapsulation
Yujia Yan, Tao Yan, Feng Wang, et al.
Nano Letters (2025)
Closed Access
Reliability challenges of gate dielectric materials in transistors
Ting‐Wei Liu, Zhe Zhao, Ruyue Cao, et al.
Deleted Journal (2025)
Open Access
Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics
Huije Ryu, Hyunjun Kim, Jae Hwan Jeong, et al.
ACS Nano (2024) Vol. 18, Iss. 20, pp. 13098-13105
Closed Access | Times Cited: 3
Versatile fitting approach for operando spectroscopic imaging ellipsometry of HfS2 oxidation
Irina Chircă, AbdulAziz AlMutairi, Barat Achinuq, et al.
2D Materials (2024) Vol. 11, Iss. 4, pp. 045001-045001
Open Access | Times Cited: 3
Synthesis of 2D Nonlayered α‐Nb2O5 Nanosheets by the Growth Promoter of Sulfur and Alkali Halides
Bo Zhang, Chengyang Niu, Wenlong Chu, et al.
physica status solidi (RRL) - Rapid Research Letters (2024) Vol. 18, Iss. 8
Closed Access | Times Cited: 2
2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications
Madani Labed, Ji‐Yun Moon, Seung‐Il Kim, et al.
ACS Nano (2024) Vol. 18, Iss. 44, pp. 30153-30183
Closed Access | Times Cited: 2
Wafer-scale synthesis of two-dimensional materials for integrated electronics
Zijia Liu, Xunguo Gong, Jinran Cheng, et al.
Chip (2023) Vol. 3, Iss. 1, pp. 100080-100080
Open Access | Times Cited: 6
Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs
Yuehua Xu, Daqing Li, He Bi Sun, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 5, pp. 4284-4297
Closed Access | Times Cited: 1
Orientation-engineered 2D electronics on van der Waals dielectrics
Weijun Wang, Yuxuan Zhang, Wei Wang, et al.
Matter (2024) Vol. 7, Iss. 6, pp. 2236-2249
Closed Access | Times Cited: 1
Design of heterostructure photocatalysts based on layered perovskite-like bismuth silicate
Yulia A. Belik, Roman Vergilessov, Evgenia A. Kovaleva, et al.
Applied Surface Science (2024) Vol. 682, pp. 161733-161733
Closed Access | Times Cited: 1
Page 1 - Next Page

Scroll to top