OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Polarized Tunneling Transistor for Ultrafast Memory
Jing Chen, Guan‐Hua Dun, Jianguo Hu, et al.
ACS Nano (2023) Vol. 17, Iss. 13, pp. 12374-12382
Closed Access | Times Cited: 15
Jing Chen, Guan‐Hua Dun, Jianguo Hu, et al.
ACS Nano (2023) Vol. 17, Iss. 13, pp. 12374-12382
Closed Access | Times Cited: 15
Showing 15 citing articles:
Two-dimensional materials for future information technology: status and prospects
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Two-Dimensional Materials for Brain-Inspired Computing Hardware
Shreyash Hadke, Min‐A Kang, Vinod K. Sangwan, et al.
Chemical Reviews (2025)
Closed Access | Times Cited: 2
Shreyash Hadke, Min‐A Kang, Vinod K. Sangwan, et al.
Chemical Reviews (2025)
Closed Access | Times Cited: 2
PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing
Jing Chen, Yeqing Zhu, Xuechun Zhao, et al.
Nano Letters (2023) Vol. 23, Iss. 22, pp. 10196-10204
Closed Access | Times Cited: 25
Jing Chen, Yeqing Zhu, Xuechun Zhao, et al.
Nano Letters (2023) Vol. 23, Iss. 22, pp. 10196-10204
Closed Access | Times Cited: 25
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors
Zhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 11
Zhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 11
Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications
Dingwen Cao, Yong Yan, Mengna Wang, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 28
Closed Access | Times Cited: 8
Dingwen Cao, Yong Yan, Mengna Wang, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 28
Closed Access | Times Cited: 8
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
Jing Chen, Mingyuan Sun, Zhenhua Wang, et al.
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 4
Jing Chen, Mingyuan Sun, Zhenhua Wang, et al.
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 4
Engineering of topological tunneling transistors via quantum point contact
Gongwei Hu, Jiaqi Yang, H. Chen, et al.
Physical Review Applied (2025) Vol. 23, Iss. 3
Closed Access
Gongwei Hu, Jiaqi Yang, H. Chen, et al.
Physical Review Applied (2025) Vol. 23, Iss. 3
Closed Access
Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system
Guangcheng Wu, Xiang Li, Wenqiang Wang, et al.
Science Bulletin (2023) Vol. 69, Iss. 4, pp. 473-482
Closed Access | Times Cited: 10
Guangcheng Wu, Xiang Li, Wenqiang Wang, et al.
Science Bulletin (2023) Vol. 69, Iss. 4, pp. 473-482
Closed Access | Times Cited: 10
Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor
Chao Tan, Haijuan Wu, Minmin Zhao, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 3
Chao Tan, Haijuan Wu, Minmin Zhao, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 3
Polarized Tunneling Transistor for Ultralow-Energy-Consumption Artificial Synapse toward Neuromorphic Computing
Jing Chen, Xuechun Zhao, Yeqing Zhu, et al.
ACS Nano (2023) Vol. 18, Iss. 1, pp. 581-591
Closed Access | Times Cited: 7
Jing Chen, Xuechun Zhao, Yeqing Zhu, et al.
ACS Nano (2023) Vol. 18, Iss. 1, pp. 581-591
Closed Access | Times Cited: 7
Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide‐Window Nonvolatile Memory and Neuromorphic Computing
Haojie Xu, Fapeng Sun, Enlong Li, et al.
Advanced Materials (2024)
Open Access | Times Cited: 2
Haojie Xu, Fapeng Sun, Enlong Li, et al.
Advanced Materials (2024)
Open Access | Times Cited: 2
Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm
Dong-Gyun Mah, Seong-Moo Oh, Jongwan Jung, et al.
Chemosensors (2024) Vol. 12, Iss. 7, pp. 134-134
Open Access
Dong-Gyun Mah, Seong-Moo Oh, Jongwan Jung, et al.
Chemosensors (2024) Vol. 12, Iss. 7, pp. 134-134
Open Access
Spin-correlation transport and multiple resistive states in multiferroic tunnel junctions
Xiaolin Zhang, Lei Yin, Sicong Zhu, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 2
Closed Access
Xiaolin Zhang, Lei Yin, Sicong Zhu, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 2
Closed Access
Human Memory‐Inspired MoS2/BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories
Chao Tan, Haijuan Wu, Jiahui Chen, et al.
Advanced Functional Materials (2024)
Open Access
Chao Tan, Haijuan Wu, Jiahui Chen, et al.
Advanced Functional Materials (2024)
Open Access
A metastable small organic molecule for secure memory devices
Hongliang Wang, Yuting Du, Xiaojuan Zhang, et al.
New Journal of Chemistry (2023) Vol. 48, Iss. 2, pp. 859-865
Closed Access
Hongliang Wang, Yuting Du, Xiaojuan Zhang, et al.
New Journal of Chemistry (2023) Vol. 48, Iss. 2, pp. 859-865
Closed Access
