OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
Jeong Yong Yang, Minseong Park, Min Jae Yeom, et al.
ACS Nano (2023) Vol. 17, Iss. 8, pp. 7695-7704
Closed Access | Times Cited: 27

Showing 1-25 of 27 citing articles:

Bidirectional Synaptic Phototransistor Based on Two-Dimensional Ferroelectric Semiconductor for Mixed Color Pattern Recognition
Yitong Chen, Min Zhang, Dingwei Li, et al.
ACS Nano (2023) Vol. 17, Iss. 13, pp. 12499-12509
Closed Access | Times Cited: 25

Recent Advances in Layered Two‐Dimensional Ferroelectrics from Material to Device
Shenmao Lin, Geyang Zhang, Qinglin Lai, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 42
Closed Access | Times Cited: 23

Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors
Zhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 11

Recent Advances in the Preparation of Gallium‐based 2D Materials and Devices Based on Gallium Liquid Metal
Fangliang Gao, Zexi Li, Shuti Li
Advanced Functional Materials (2025)
Closed Access | Times Cited: 1

Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric
Jeong Yong Yang, S. Y. Oh, Min Jae Yeom, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 8, pp. 1260-1263
Closed Access | Times Cited: 17

Optoelectronic dual-synapse based on wafer-level GaN-on-Si device incorporating embedded SiO2 barrier layers
Kuan‐Chang Chang, H. H. Liu, Xinqin Duan, et al.
Nano Energy (2024) Vol. 125, pp. 109564-109564
Closed Access | Times Cited: 6

2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects
Chloe Leblanc, Seunguk Song, Deep Jariwala
Current Opinion in Solid State and Materials Science (2024) Vol. 32, pp. 101178-101178
Open Access | Times Cited: 6

Spatially Resolved Light‐Induced Ferroelectric Polarization in α‐In2Se3/Te Heterojunctions
Kai Zhang, Haozhe Li, Haoran Mu, et al.
Advanced Materials (2024) Vol. 36, Iss. 38
Closed Access | Times Cited: 6

Strategic Development of Memristors for Neuromorphic Systems: Low‐Power and Reconfigurable Operation
Jang Woo Lee, Jiye Han, Boseok Kang, et al.
Advanced Materials (2025)
Closed Access

Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems
Zhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Advanced Materials (2025)
Closed Access

Multifunctional Two-Terminal Optoelectronic Synapse Based on an Organic Semiconductor Film
Pengfei Zhao, Xiyuan Peng, Mingqing Cui, et al.
ACS Applied Polymer Materials (2023) Vol. 5, Iss. 10, pp. 8764-8773
Closed Access | Times Cited: 9

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP 2 S 6 /GaN HEMT
Minseong Park, Jeong Yong Yang, Min Jae Yeom, et al.
Science Advances (2023) Vol. 9, Iss. 38
Open Access | Times Cited: 8

Reconfigurable Physical Reservoir Enabled by Polarization of Ferroelectric Polymer P(VDF–TrFE) and Interface Charge‐Trapping/Detrapping in Dual‐Gate IGZO Transistor
Fang‐Jui Chu, Y. C. Chen, Li‐Chung Shih, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 10
Closed Access | Times Cited: 7

Neuromorphic Engineering in GaN HEMTs Exploiting Dendritic Dislocations for Neuromodulations Behaviors and Adaptive Intelligent Power Forecasting Systems
Lei Li, H. H. Liu, Qunkai Peng, et al.
Nano Energy (2024) Vol. 130, pp. 110129-110129
Closed Access | Times Cited: 2

Large-scale synthesis and exciton dynamics of monolayer MoS2 on differently doped GaN substrates
Pengcheng Jian, Xueqing Cai, Yongming Zhao, et al.
Nanophotonics (2023) Vol. 12, Iss. 24, pp. 4475-4484
Open Access | Times Cited: 5

Nonvolatile Electro-optic Response of Graphene Driven by Ferroelectric Polarization
Jianghong Wu, Jialing Jian, Hui Ma, et al.
Nano Letters (2024) Vol. 24, Iss. 37, pp. 11469-11475
Closed Access | Times Cited: 1

A Self‐Driven Ga2O3 Memristor Synapse for Humanoid Robot Learning
Jianya Zhang, Jiamin Li, Rui Xu, et al.
Small Methods (2024)
Closed Access | Times Cited: 1

Realizing Bidirectional Photocurrent in Monolithic Dual‐Mode Device for Neuromorphic Vision and Logically‐Encrypted Transmission
Min Jiang, Yukun Zhao, Lifeng Bian, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 1

Two-dimensional van der Waals ferroelectric field-effect transistors toward nonvolatile memory and neuromorphic computing
Xiankai Lin, Xuguang Huang, Qian Zhang, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 18
Closed Access | Times Cited: 2

An artificial synaptic device based on 1,2-diphenylacetylene with femtojoule energy consumption for neuromorphic computing
Mengyuan Duan, Jiesong Liu, Zhengjie Li, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 20, pp. 7377-7385
Closed Access

Two-dimensional ferroelectric semiconductor floating-gate transistor with light-tunable field effect for memory and photo-synapse
Yurong Jiang, Rui Wang, Yuting Peng, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 10
Closed Access

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