
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Novel Type of Synaptic Transistors Based on a Ferroelectric Semiconductor Channel
Bin Tang, Sabir Hussain, Rui Xu, et al.
ACS Applied Materials & Interfaces (2020) Vol. 12, Iss. 22, pp. 24920-24928
Closed Access | Times Cited: 53
Bin Tang, Sabir Hussain, Rui Xu, et al.
ACS Applied Materials & Interfaces (2020) Vol. 12, Iss. 22, pp. 24920-24928
Closed Access | Times Cited: 53
Showing 1-25 of 53 citing articles:
Artificial Neuron Devices
Ke He, Cong Wang, Yongli He, et al.
Chemical Reviews (2023) Vol. 123, Iss. 23, pp. 13796-13865
Closed Access | Times Cited: 83
Ke He, Cong Wang, Yongli He, et al.
Chemical Reviews (2023) Vol. 123, Iss. 23, pp. 13796-13865
Closed Access | Times Cited: 83
Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications
Fanqing Zhang, Chunyang Li, Zhong‐Yi Li, et al.
Microsystems & Nanoengineering (2023) Vol. 9, Iss. 1
Open Access | Times Cited: 73
Fanqing Zhang, Chunyang Li, Zhong‐Yi Li, et al.
Microsystems & Nanoengineering (2023) Vol. 9, Iss. 1
Open Access | Times Cited: 73
Electron trapping & blocking effect enabled by MXene/TiO2 intermediate layer for charge regulation of triboelectric nanogenerators
Xiaoping Chen, Yina Liu, Yi Sun, et al.
Nano Energy (2022) Vol. 98, pp. 107236-107236
Closed Access | Times Cited: 72
Xiaoping Chen, Yina Liu, Yi Sun, et al.
Nano Energy (2022) Vol. 98, pp. 107236-107236
Closed Access | Times Cited: 72
Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing
Chunsheng Chen, Yaoqiang Zhou, Lei Tong, et al.
Advanced Materials (2024)
Open Access | Times Cited: 24
Chunsheng Chen, Yaoqiang Zhou, Lei Tong, et al.
Advanced Materials (2024)
Open Access | Times Cited: 24
All‐Solid‐State Vertical Three‐Terminal N‐Type Organic Synaptic Devices for Neuromorphic Computing
Zhichao Xie, Chenyu Zhuge, Yanfei Zhao, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 21
Closed Access | Times Cited: 49
Zhichao Xie, Chenyu Zhuge, Yanfei Zhao, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 21
Closed Access | Times Cited: 49
Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In2Se3
Qinming He, Zhiyuan Tang, Minzhi Dai, et al.
Nano Letters (2023) Vol. 23, Iss. 7, pp. 3098-3105
Closed Access | Times Cited: 28
Qinming He, Zhiyuan Tang, Minzhi Dai, et al.
Nano Letters (2023) Vol. 23, Iss. 7, pp. 3098-3105
Closed Access | Times Cited: 28
Multi‐Functional Platform for In‐Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α‐In2Se3
Xuan Li, Shuo Li, Jiamin Tian, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 3
Open Access | Times Cited: 23
Xuan Li, Shuo Li, Jiamin Tian, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 3
Open Access | Times Cited: 23
Recent advances in neuromorphic transistors for artificial perception applications
Wei Sheng Wang, Li Qiang Zhu
Science and Technology of Advanced Materials (2022) Vol. 24, Iss. 1
Open Access | Times Cited: 31
Wei Sheng Wang, Li Qiang Zhu
Science and Technology of Advanced Materials (2022) Vol. 24, Iss. 1
Open Access | Times Cited: 31
Recent progress in ferroelectric synapses and their applications
Shaoan Yan, Junyi Zang, Pei Xu, et al.
Science China Materials (2022) Vol. 66, Iss. 3, pp. 877-894
Open Access | Times Cited: 28
Shaoan Yan, Junyi Zang, Pei Xu, et al.
Science China Materials (2022) Vol. 66, Iss. 3, pp. 877-894
Open Access | Times Cited: 28
Recent progress on two-dimensional neuromorphic devices and artificial neural network
Changfa Tian, Liubo Wei, Yanran Li, et al.
Current Applied Physics (2021) Vol. 31, pp. 182-198
Closed Access | Times Cited: 34
Changfa Tian, Liubo Wei, Yanran Li, et al.
Current Applied Physics (2021) Vol. 31, pp. 182-198
Closed Access | Times Cited: 34
Ultralow Power Consumption and Large Dynamic Range Synaptic Transistor Based on α-In2Se3 Nanosheets
Bin Tang, Xuan Li, Jianhui Liao, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 2, pp. 598-605
Closed Access | Times Cited: 28
Bin Tang, Xuan Li, Jianhui Liao, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 2, pp. 598-605
Closed Access | Times Cited: 28
Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses
Yichen Cai, Jialong Zhang, Mengge Yan, et al.
npj Flexible Electronics (2022) Vol. 6, Iss. 1
Open Access | Times Cited: 28
Yichen Cai, Jialong Zhang, Mengge Yan, et al.
npj Flexible Electronics (2022) Vol. 6, Iss. 1
Open Access | Times Cited: 28
A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe2/In2Se3 Ferroelectric Heterostructure
Xuan Li, Shuo Li, Bin Tang, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 10
Closed Access | Times Cited: 25
Xuan Li, Shuo Li, Bin Tang, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 10
Closed Access | Times Cited: 25
Advanced artificial synaptic thin-film transistor based on doped potassium ions for neuromorphic computing via third-generation neural network
Yixin Cao, Tianshi Zhao, Chun Zhao, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 8, pp. 3196-3206
Open Access | Times Cited: 24
Yixin Cao, Tianshi Zhao, Chun Zhao, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 8, pp. 3196-3206
Open Access | Times Cited: 24
Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc–Tin Oxide Transistor
Ching-Kang Shen, Rajneesh Chaurasiya, Kuan‐Ting Chen, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 14, pp. 16939-16948
Closed Access | Times Cited: 24
Ching-Kang Shen, Rajneesh Chaurasiya, Kuan‐Ting Chen, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 14, pp. 16939-16948
Closed Access | Times Cited: 24
Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity
Yanggeun Joo, Eunji Hwang, Heemyoung Hong, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 14
Yanggeun Joo, Eunji Hwang, Heemyoung Hong, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 14
Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure
Jingjie Niu, Sumin Jeon, Donggyu Kim, et al.
InfoMat (2023) Vol. 6, Iss. 2
Open Access | Times Cited: 14
Jingjie Niu, Sumin Jeon, Donggyu Kim, et al.
InfoMat (2023) Vol. 6, Iss. 2
Open Access | Times Cited: 14
Flexible Artificial Synapses with a Biocompatible Maltose–Ascorbic Acid Electrolyte Gate for Neuromorphic Computing
Wei Qin, Byung Ha Kang, Hyun Jae Kim
ACS Applied Materials & Interfaces (2021) Vol. 13, Iss. 29, pp. 34597-34604
Closed Access | Times Cited: 29
Wei Qin, Byung Ha Kang, Hyun Jae Kim
ACS Applied Materials & Interfaces (2021) Vol. 13, Iss. 29, pp. 34597-34604
Closed Access | Times Cited: 29
An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition
Neha Mohta, Ankit Rao, Nayana Remesh, et al.
RSC Advances (2021) Vol. 11, Iss. 58, pp. 36901-36912
Open Access | Times Cited: 28
Neha Mohta, Ankit Rao, Nayana Remesh, et al.
RSC Advances (2021) Vol. 11, Iss. 58, pp. 36901-36912
Open Access | Times Cited: 28
Temperature-Driven α-β Phase Transformation and Enhanced Electronic Property of 2H α-In2Se3
Fengjiao Lyu, Xuan Li, Jiamin Tian, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 20, pp. 23637-23644
Closed Access | Times Cited: 22
Fengjiao Lyu, Xuan Li, Jiamin Tian, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 20, pp. 23637-23644
Closed Access | Times Cited: 22
Ferroelectric materials for neuroinspired computing applications
Dong Wang, Shenglan Hao, Brahim Dkhil, et al.
Fundamental Research (2023) Vol. 4, Iss. 5, pp. 1272-1291
Open Access | Times Cited: 12
Dong Wang, Shenglan Hao, Brahim Dkhil, et al.
Fundamental Research (2023) Vol. 4, Iss. 5, pp. 1272-1291
Open Access | Times Cited: 12
Enhanced Electrical Polarization in van der Waals α‐In2Se3 Ferroelectric Semiconductor Field‐Effect Transistors by Eliminating Surface Screening Charge
J.M. Kim, Seung‐Hwan Kim, Hyun‐Yong Yu
Small (2024)
Closed Access | Times Cited: 4
J.M. Kim, Seung‐Hwan Kim, Hyun‐Yong Yu
Small (2024)
Closed Access | Times Cited: 4
Non-Volatile Memory and Artificial Synapse Based on 2d Α-In2se3(2h) Ferroelectric
Baohua Lv, Yuzhen Li
(2025)
Closed Access
Baohua Lv, Yuzhen Li
(2025)
Closed Access
Flexible Temperature Sensor with 2D In2Se3 Ferroelectric‐Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity
Taebin Lim, Junmi Lee, Jin Jang
Small (2025)
Closed Access
Taebin Lim, Junmi Lee, Jin Jang
Small (2025)
Closed Access
Tunable Synaptic Plasticity in 2D Ferroelectric Semiconductor Transistor for High-Precision Neuromorphic Computing
Tingting Ma, Yichen Wei
ACS Applied Electronic Materials (2025)
Closed Access
Tingting Ma, Yichen Wei
ACS Applied Electronic Materials (2025)
Closed Access