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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In2O3 Thin-Film Transistor with Gd2O3 Solid Electrolyte
You-Hang Zhou, Jun Li, Yaohua Yang, et al.
ACS Applied Materials & Interfaces (2019) Vol. 12, Iss. 1, pp. 980-988
Closed Access | Times Cited: 53

Showing 1-25 of 53 citing articles:

All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems
Qihan Liu, Li Yin, Chun Zhao, et al.
Nano Energy (2022) Vol. 97, pp. 107171-107171
Closed Access | Times Cited: 81
Solution-processed electronics for artificial synapses
Kuakua Lu, Xiaomeng Li, Qingqing Sun, et al.
Materials Horizons (2020) Vol. 8, Iss. 2, pp. 447-470
Closed Access | Times Cited: 90
Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system
Min‐Hwi Kim, Hea‐Lim Park, Min‐Hoi Kim, et al.
npj Flexible Electronics (2021) Vol. 5, Iss. 1
Open Access | Times Cited: 63
Multimode transistors and neural networks based on ion-dynamic capacitance
Xiaoci Liang, Yiyang Luo, Yanli Pei, et al.
Nature Electronics (2022) Vol. 5, Iss. 12, pp. 859-869
Open Access | Times Cited: 59
Two-dimensional materials memory devices with floating metal gate for neuromorphic applications
Muhammad Asghar Khan, Sungbin Yim, Shania Rehman, et al.
Materials Today Advances (2023) Vol. 20, pp. 100438-100438
Open Access | Times Cited: 25
A review on topical advancement and challenges of indium oxide based gas sensors: Future outlooks
Katlego L. Morulane, H.C. Swart, David E. Motaung
Journal of environmental chemical engineering (2024) Vol. 12, Iss. 2, pp. 112144-112144
Open Access | Times Cited: 11
LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond
Shunfeng Chen, Yuanjie Ning, Chi Sin Tang, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 3
Open Access | Times Cited: 10
High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing
Qian Yang, Huihuang Yang, Dongxu Lv, et al.
ACS Applied Materials & Interfaces (2021) Vol. 13, Iss. 7, pp. 8672-8681
Closed Access | Times Cited: 46
Graphene/gadolinium oxide composite modified screen-printed electrochemical sensor for detection of diclofenac sodium
Sudip Das, Arghya Chakravorty, Sahil Luktuke, et al.
Results in Chemistry (2023) Vol. 6, pp. 101189-101189
Open Access | Times Cited: 19
Mimicking Pain-Perceptual Sensitization and Pattern Recognition Based on Capacitance- and Conductance-Regulated Neuroplasticity in Neural Network
Kuan‐Ting Chen, Li‐Chung Shih, Shi‐Cheng Mao, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 7, pp. 9593-9603
Closed Access | Times Cited: 17
Synaptic Plasticity Powering Long‐Afterglow Organic Light‐Emitting Transistors
Yu‐Sheng Chen, Hanlin Wang, Yifan Yao, et al.
Advanced Materials (2021) Vol. 33, Iss. 39
Open Access | Times Cited: 36
Enhanced Artificial Synaptic Properties Enabled by Arrays of Electrolyte-Gated Electrospun InZnO Nanowires
Yu Chang, Haofei Cong, Ruifu Zhou, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 5, pp. 2570-2579
Closed Access | Times Cited: 27
Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In2O3/AlLiO Thin-Film Transistor
Dongliang Jiang, Jun Li, Wenhui Fu, et al.
ACS Applied Electronic Materials (2020) Vol. 2, Iss. 9, pp. 2772-2779
Closed Access | Times Cited: 33
Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption
June‐Mo Yang, Young‐Kwang Jung, Ju-Hee Lee, et al.
Nanoscale Horizons (2021) Vol. 6, Iss. 12, pp. 987-997
Closed Access | Times Cited: 30
Artificial Synapses Based on WSe2 Homojunction via Vacancy Migration
Junwen Ren, Hongzhi Shen, Zeyi Liu, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 18, pp. 21141-21149
Closed Access | Times Cited: 19
Synaptic plasticity and memory mimicked in solution-processed K-doped CuI thin film transistors
J. H. Lei, Wei Dou, Wei Hou, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 3
Closed Access | Times Cited: 4
High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
Huimin Su, Linfeng Lan, Jintao Xu, et al.
ACS Omega (2025)
Open Access
High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels
Siwei Wang, Xuemeng Hu, Baifan Qian, et al.
Advanced Electronic Materials (2025)
Open Access
Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
Sami Bolat, Galo Torres Sevilla, Alessio Mancinelli, et al.
Scientific Reports (2020) Vol. 10, Iss. 1
Open Access | Times Cited: 32
Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics
Taebin Lim, Suhui Lee, Jiseob Lee, et al.
Advanced Functional Materials (2022) Vol. 33, Iss. 8
Closed Access | Times Cited: 17
Bend‐Resistant and Energy‐Friendly GO‐PVA/PVA Polymer Electret Synaptic Transistors for Neuromorphic Computations
Xiao Fu, Zhihao Liang, Wentao Shuai, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 52
Closed Access | Times Cited: 9
Flexible, solution-processed, indium oxide (In2O3) thin film transistors (TFT) and circuits for internet-of-things (IoT)
Sagar R. Bhalerao, Donald Lupo, Paul R. Berger
Materials Science in Semiconductor Processing (2021) Vol. 139, pp. 106354-106354
Open Access | Times Cited: 23
Recent advances in solid electrolytes for synaptic transistors
Jun Li, Wenhui Fu, Linkang Li, et al.
Organic Electronics (2021) Vol. 95, pp. 106196-106196
Closed Access | Times Cited: 20
Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdO x Bilayer Gate Dielectrics
Leini Wang, Gang He, Shanshan Jiang, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 6, pp. 3169-3174
Closed Access | Times Cited: 12
Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors
Yang Ming Fu, Hu Li, Tianye Wei, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 6, pp. 2933-2942
Open Access | Times Cited: 11
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