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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition
Min Hoe Cho, Cheol Hee Choi, Min Jae Kim, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 15, pp. 19137-19151
Closed Access | Times Cited: 23

Showing 23 citing articles:

c-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility–Stability Trade-off
Su‐Hwan Choi, Seong‐Hwan Ryu, Dong-Gyu Kim, et al.
Nano Letters (2024) Vol. 24, Iss. 4, pp. 1324-1331
Closed Access | Times Cited: 9
All‐Solution‐Processed InGaO/PbI2 Heterojunction for Self‐Powered Omnidirectional Near‐Ultraviolet Photodetection and Imaging
Jie Zhang, Zixu Sa, Pengsheng Li, et al.
Advanced Optical Materials (2024) Vol. 12, Iss. 13
Closed Access | Times Cited: 9
Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer
Joo Hee Jeong, Seong Hun Yoon, Seung Hee Lee, et al.
IEEE Electron Device Letters (2024) Vol. 45, Iss. 5, pp. 849-852
Closed Access | Times Cited: 7
Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer
Joo Hee Jeong, Seung Wan Seo, Dongseon Kim, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access | Times Cited: 7
Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors
Ho Young Lee, Jae Seok Hur, Iaan Cho, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 44, pp. 51399-51410
Closed Access | Times Cited: 15
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer
Cheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access | Times Cited: 5
Design of an Atomic Layer-Deposited In2O3/Ga2O3 Channel Structure for High-Performance Thin-Film Transistors
Jae Seok Hur, Joo Hee Jeong, Gwang‐Bok Kim, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Enhancing Temperature Stability of ALD-deposited IGZO Thin-Film Transistor by Optimizing Composition Ratio
Jianting Wu, Huajian Zheng, Min Guo, et al.
Journal of Alloys and Compounds (2025), pp. 179753-179753
Closed Access
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors
Gwang‐Bok Kim, Taikyu Kim, Seon Woong Bang, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 4
Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability
Bang Ju Park, Sang Won Chung, Min Jae Kim, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 11, pp. 1857-1860
Closed Access | Times Cited: 7
The comprehensive study of hybrid dielectric layer adopted organic thin film transistors for low voltage operation
S. Lakshmi Priya, Tsu Wei Haung, Kaushlendra Agrahari, et al.
Journal of Molecular Liquids (2024) Vol. 409, pp. 125431-125431
Closed Access | Times Cited: 2
Power-efficient and high-performance potential of pentacene transistors enabled by metal-nitride gate insulators fabricated with nitrogen plasma
Yu‐Wu Wang, Pravinraj Selvaraj, Yu Han Cheng, et al.
Organic Electronics (2024) Vol. 128, pp. 107034-107034
Closed Access | Times Cited: 1
In2O3/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses
S. W. Sun, Minghao Zhang, Jing Bian, et al.
Nanotechnology (2024) Vol. 35, Iss. 36, pp. 365602-365602
Closed Access | Times Cited: 1
Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition
Jiwon Kang, Dong-Hee Lee, Young-Ha Kwon, et al.
Materials Science in Semiconductor Processing (2024) Vol. 181, pp. 108665-108665
Closed Access | Times Cited: 1
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors
Gwang‐Bok Kim, Taikyu Kim, J.S. Bak, et al.
IEEE Electron Device Letters (2024) Vol. 45, Iss. 10, pp. 1831-1834
Closed Access | Times Cited: 1
Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process
Min Guo, Jianting Wu, Hai Ou, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Rational selection of the oxygen source for atomic layer deposition Al2O3 insulators
Xue Chen, Ruokai Wu, Jiaxian Wan, et al.
Vacuum (2023) Vol. 215, pp. 112315-112315
Closed Access | Times Cited: 2
Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
Xiao Li, Zhikang Ma, Jinxiong Li, et al.
Journal of Semiconductors (2024) Vol. 45, Iss. 10, pp. 102301-102301
Closed Access
High-performance InGaZnO power transistors: Effect of device structural parameters
Wenxing Huo, Yonghui Zhang, Chenglong Fang, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 16
Closed Access
Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review
Inhong Hwang, Minki Choe, Dahui Jeon, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 45, pp. 18167-18200
Closed Access
Investigation of the electrical performance and carrier transport mechanism for heterostructured bilayer In2O3/InGaSnO thin-film transistors
Zhenyu Han, Ablat Abliz
Applied Physics Letters (2024) Vol. 125, Iss. 23
Closed Access
One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm2 V−1 s−1 Mobility and Excellent Bias Stabilities by Using Offset Engineering
Md. Hasnat Rabbi, Md. Redowan Mahmud Arnob, Sabiqun Nahar, et al.
Advanced Functional Materials (2024)
Closed Access
Mesh-patterned IZO/Hf-doped IGZO thin film transistors with high mobility and mechanical stability for flexible display
Kangmin Lee, Nahyun Kim, Jin Kyung Lee, et al.
Applied Surface Science (2024), pp. 162102-162102
Closed Access
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