Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films
Xuepei Wang, Yichen Wen, Maokun Wu, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 12, pp. 15657-15667
Closed Access | Times Cited: 22

Showing 22 citing articles:

Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array
Jihyung Kim, Subaek Lee, Sungjoon Kim, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 8
Closed Access | Times Cited: 29
Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick
Yufan Shen, Kousuke Ooe, Xueyou Yuan, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 9
Electrochemistry of Thin Films and Nanostructured Materials
Grzegorz D. Sulka
Molecules (2023) Vol. 28, Iss. 10, pp. 4040-4040
Open Access | Times Cited: 14
Improving the endurance for ferroelectric Hf0.5Zr0.5O2 thin films by interface and defect engineering
Jing Zhou, Yue Guan, Miao Meng, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 9
Closed Access | Times Cited: 5
Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide
Seung Mo Kim, Minjae Kim, Chan Bin Lee, et al.
ACS Applied Materials & Interfaces (2025)
Open Access
Ultra-high remnant polarization in wake-up-free ferroelectric thin films realized by atomic layer annealing
Chi-Lin Mo, Hsin-Chih Lin, Miin‐Jang Chen
Acta Materialia (2025), pp. 120855-120855
Closed Access
Probing Hf0.5Zr0.5O2 Ferroelectricity: Neutron Reflectivity Reveals Critical Interface Effects
Hsing-Yang Chen, Chi-Lin Mo, Jing‐Jong Shyue, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Antiferroelectric–ferroelectric phase transition of HfO2 and its influencing factors
Yingjun Tan, Yao Wu, Tianpeng Duan, et al.
Computational Materials Science (2025), pp. 113873-113873
Closed Access
Hafnium oxide-based nonvolatile ferroelectric memcapacitor array for high energy-efficiency neuromorphic computing
Xuepei Wang, S. Ye, Boyao Cui, et al.
Nano Energy (2025), pp. 111011-111011
Closed Access
Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity
Yin-Chi Liu, Yuchun Li, Ze-Yu Gu, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 7, pp. 1116-1119
Closed Access | Times Cited: 9
Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films
Xuepei Wang, Maokun Wu, Ting Zhang, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 23
Closed Access | Times Cited: 2
Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films
Xuepei Wang, Maokun Wu, Boyao Cui, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 1, pp. 100-103
Closed Access | Times Cited: 6
Sn‐Doped Cs3Cu2I5 Microcrystals with High Photoluminescence and Hydrochromic Stability for Anti‐Counterfeiting and Encryption Applications
G. S. Dong, Weichen Li, Lu Zhang, et al.
Advanced Optical Materials (2023) Vol. 12, Iss. 6
Closed Access | Times Cited: 5
Influence of metal electrodes on the irradiation resistance of HZO ferroelectric thin film capacitors and mechanism analysis
Shaoan Yan, Junyi Zang, Yingfang Zhu, et al.
Journal of Alloys and Compounds (2023) Vol. 976, pp. 173175-173175
Closed Access | Times Cited: 5
Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2 ferroelectric capacitors towards long endurance and high temperature retention
Sheng-Min Wang, Chengrui Liu, Yu‐Ting Chen, et al.
Nanotechnology (2024) Vol. 35, Iss. 20, pp. 205704-205704
Open Access | Times Cited: 1
Influence of TiN diffusion barrier on the leakage current and ferroelectricity in Al-doped HfOx ferroelectric tunneling junction and its application to neuromorphic computing
Eunjin Lim, Euncho Seo, Sungjun Kim
Nanoscale (2024) Vol. 16, Iss. 41, pp. 19445-19452
Closed Access | Times Cited: 1
Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf0.5Zr0.5O2 thin films
Kuan 宽 Liu 刘, Kai 楷 Liu 刘, Xingchang 醒昌 Zhang 张, et al.
Chinese Physics Letters (2024) Vol. 41, Iss. 11, pp. 117701-117701
Closed Access | Times Cited: 1
Hf 0.5Zr0.5O2/Fe65Co35薄膜中电阻开关行为的偏置电压控制
Lili Guo, Yemei Han, Yuming Chen, et al.
(2024)
Closed Access
Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer
Kuan Liu, Kai Liu, Xingchang Zhang, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 10
Open Access
Bias voltage modulated electric transport properties in Fe65Co35/Hf0.5Zr0.5O2 films
Lili Guo, Yemei Han, Yuming Chen, et al.
Vacuum (2024), pp. 113675-113675
Closed Access
Direct growth of ferroelectric orthorhombic ZrO2 on Ru by atomic layer deposition at 300 °C
M. Ko, Ji Su Park, Soyun Joo, et al.
Materials Horizons (2024)
Closed Access
Impact of Scaling Thickness on the Ferroelectric Properties of Pt/Al$_{\text{0.8}}$Sc$_{\text{0.2}}$N/Pt Capacitors
Xiaoxi Li, Yuan Fang, Jiuren Zhou, et al.
IEEE Transactions on Electron Devices (2024) Vol. 72, Iss. 1, pp. 370-375
Closed Access
Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Devices Enabled by Microwave Annealing
Yinchi Liu, Hao Zhang, Jining Yang, et al.
Chip (2024), pp. 100120-100120
Open Access
Page 1

Scroll to top