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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing
V. Gaddam, Giuk Kim, Taeho Kim, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 38, pp. 43463-43473
Closed Access | Times Cited: 25

Showing 25 citing articles:

A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity
Xiang Zhou, Haoyang Sun, Jiachen Li, et al.
Journal of Materiomics (2023) Vol. 10, Iss. 1, pp. 210-217
Open Access | Times Cited: 22
Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film
Minhyun Jung, Seungyeob Kim, Junghyeon Hwang, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 2
Open Access | Times Cited: 7
Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology
Chun‐Ho Chuang, Ting‐Yun Wang, Chun‐Yi Chou, et al.
Advanced Science (2023) Vol. 10, Iss. 32
Open Access | Times Cited: 13
Enhancement of electrical properties of morphotropic phase boundary in Hf1-xZrxO2 films by integrating Mo electrode and TiN interlayer for DRAM capacitors
Ju Yong Park, Hyojun Choi, Jaewook Lee, et al.
Applied Surface Science Advances (2025) Vol. 27, pp. 100733-100733
Closed Access
Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications
Geun Hyeong Park, Dong Hyun Lee, Hyojun Choi, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 2, pp. 642-663
Closed Access | Times Cited: 12
Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
Hyojun Choi, Yong Hyeon Cho, Se Hyun Kim, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 4, pp. 983-997
Closed Access | Times Cited: 4
Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide
Seung Mo Kim, Minjae Kim, Chan Bin Lee, et al.
ACS Applied Materials & Interfaces (2025)
Open Access
Zro2 Seed-Layer Induced Crystallization of Hf1-Xzrxo2 with Energy Barrier Lowering Effect of the Ferroelectric Orthorhombic Phase Transition
Kyong Jae Kim, Eunseo Jo, Madani Labed, et al.
(2025)
Closed Access
Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations
Kun Hee Ye, In Won Yeu, Gyuseung Han, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 3
Closed Access | Times Cited: 10
Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering
Lei Liu Lei Liu, Chengfeng Jiang, Xi Yuan, et al.
Journal of Materiomics (2024)
Open Access | Times Cited: 3
Enhanced dielectric and energy storage performances of Hf0.6Zr0.4O2 thin films by Al doping
Seungwon Lee, Min Ji Jeong, Youkyoung Oh, et al.
Ceramics International (2023) Vol. 49, Iss. 11, pp. 18055-18060
Closed Access | Times Cited: 8
5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor
Zhen Luo, Xinzhe Du, Hui Gan, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 19
Closed Access | Times Cited: 8
Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary
Seungyeol Oh, Hojung Jang, Hyunsang Hwang
IEEE Electron Device Letters (2023) Vol. 45, Iss. 1, pp. 28-31
Closed Access | Times Cited: 8
Monolithic three-dimensional hafnia-based artificial nerve system
Minhyun Jung, Seungyeob Kim, Junghyeon Hwang, et al.
Nano Energy (2024) Vol. 126, pp. 109643-109643
Closed Access | Times Cited: 2
Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices
Yeongseok Jeong, V. Gaddam, Youngin Goh, et al.
IEEE Transactions on Electron Devices (2022) Vol. 70, Iss. 1, pp. 354-359
Closed Access | Times Cited: 11
Novel strategies for low-voltage NAND flash memory with negative capacitance effect
Giuk Kim, Taeho Kim, Sang Ho Lee, et al.
Japanese Journal of Applied Physics (2024) Vol. 63, Iss. 5, pp. 05SP06-05SP06
Open Access | Times Cited: 1
Stabilization of Morphotropic Phase Boundary in Hafnia Via Microwave Low‐temperature Crystallization Process for Next‐generation DRAM Technology
Hunbeom Shin, Giuk Kim, Sujeong Lee, et al.
physica status solidi (RRL) - Rapid Research Letters (2024) Vol. 18, Iss. 9
Closed Access | Times Cited: 1
CMOS-Compatible Low-T Processing Methods for HZO-based DRAM capacitors by E-field Cycling
Yuanbiao Li, Xinyi Tang, Guangwei Xu, et al.
(2024), pp. 1-4
Closed Access | Times Cited: 1
Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure
Geon Park, An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, et al.
IEEE Electron Device Letters (2024) Vol. 45, Iss. 10, pp. 1997-2000
Closed Access | Times Cited: 1
Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, et al.
Nanomaterials (2023) Vol. 13, Iss. 5, pp. 900-900
Open Access | Times Cited: 3
High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose
Xinzhe Du, Zhen Luo, Shengchun Shen, et al.
Applied Surface Science (2023) Vol. 638, pp. 158078-158078
Closed Access | Times Cited: 2
Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability
Seungwon Lee, Hyun‐Chang Kim, Ji‐Hoon Ahn
Surfaces and Interfaces (2023) Vol. 42, pp. 103499-103499
Closed Access | Times Cited: 2
All‐Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons
Jangsaeng Kim, Eun Chan Park, Wonjun Shin, et al.
Advanced Science (2024) Vol. 11, Iss. 44
Open Access
HZO ($>$10 nm) Films for Achieving High-TEXPRESERVE1 Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process
Yixin Qin, V. Gaddam, Taeseung Jung, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 9, pp. 5618-5623
Closed Access
Exploring the Morphotropic Phase Boundary in HfO2‐Based Ferroelectrics for Advanced High‐k Dielectrics
Seungyeol Oh, Hojung Jang, Mostafa Habibi, et al.
Advanced Materials Technologies (2024)
Closed Access
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