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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
Jinju Lee, Jiho Ryu, Boram Kim, et al.
ACS Applied Materials & Interfaces (2020) Vol. 12, Iss. 30, pp. 33908-33916
Closed Access | Times Cited: 65

Showing 1-25 of 65 citing articles:

ABO3multiferroic perovskite materials for memristive memory and neuromorphic computing
Bai Sun, Guangdong Zhou, Linfeng Sun, et al.
Nanoscale Horizons (2021) Vol. 6, Iss. 12, pp. 939-970
Closed Access | Times Cited: 113
Biodegradable and Flexible Polymer‐Based Memristor Possessing Optimized Synaptic Plasticity for Eco‐Friendly Wearable Neural Networks with High Energy Efficiency
Sungjun Oh, Hyungjin Kim, Seong Eun Kim, et al.
Advanced Intelligent Systems (2023) Vol. 5, Iss. 5
Open Access | Times Cited: 44
Synaptic Properties and Short‐Term Memory Dynamics of TiO2/WOx Heterojunction Memristor for Reservoir Computing
Hyojin So, Jungwoo Lee, Chandreswar Mahata, et al.
Advanced Materials Technologies (2024) Vol. 9, Iss. 5
Closed Access | Times Cited: 21
2D materials-memristive devices nexus: From status quo to Impending applications
Muhammad Muqeet Rehman, Yarjan Abdul Samad, Jahan Zeb Gul, et al.
Progress in Materials Science (2025), pp. 101471-101471
Open Access | Times Cited: 2
Reliable organic memristors for neuromorphic computing by predefining a localized ion-migration path in crosslinkable polymer
Hea‐Lim Park, Min‐Hwi Kim, Min‐Hoi Kim, et al.
Nanoscale (2020) Vol. 12, Iss. 44, pp. 22502-22510
Closed Access | Times Cited: 74
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing
Jinwoong Yang, Hyojong Cho, Hojeong Ryu, et al.
ACS Applied Materials & Interfaces (2021) Vol. 13, Iss. 28, pp. 33244-33252
Closed Access | Times Cited: 64
Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system
Min‐Hwi Kim, Hea‐Lim Park, Min‐Hoi Kim, et al.
npj Flexible Electronics (2021) Vol. 5, Iss. 1
Open Access | Times Cited: 63
Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications
Atul C. Khot, Tukaram D. Dongale, Kiran A. Nirmal, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 8, pp. 10546-10557
Closed Access | Times Cited: 50
Implementation of reservoir computing using volatile WO -based memristor
Dahye Kim, Jiwoong Shin, Sungjun Kim
Applied Surface Science (2022) Vol. 599, pp. 153876-153876
Closed Access | Times Cited: 44
Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence
Muhammad Ismail, Chandreswar Mahata, Osung Kwon, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 3, pp. 1288-1300
Closed Access | Times Cited: 39
Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors
Haohan Chen, Yu Kang, Dong Pu, et al.
Nanoscale (2023) Vol. 15, Iss. 9, pp. 4309-4316
Closed Access | Times Cited: 27
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
Muhammad Ismail, Maria Rasheed, Chandreswar Mahata, et al.
Journal of Alloys and Compounds (2023) Vol. 960, pp. 170846-170846
Closed Access | Times Cited: 25
An overview of critical applications of resistive random access memory
Furqan Zahoor, Arshid Nisar, Usman Isyaku Bature, et al.
Nanoscale Advances (2024)
Open Access | Times Cited: 8
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Applied Surface Science (2022) Vol. 599, pp. 153906-153906
Closed Access | Times Cited: 32
Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware
Jing Xie, Sahra Afshari, Ivan Sanchez Esqueda
npj 2D Materials and Applications (2022) Vol. 6, Iss. 1
Open Access | Times Cited: 30
Sprayed FeWO4 thin film-based memristive device with negative differential resistance effect for non-volatile memory and synaptic learning applications
Amitkumar R. Patil, Tukaram D. Dongale, Lahu D. Namade, et al.
Journal of Colloid and Interface Science (2023) Vol. 642, pp. 540-553
Closed Access | Times Cited: 21
Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications
S. M. Sattari‐Esfahlan, Hyoung Gyun Kim, Sang Hwa Hyun, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 5, pp. 7274-7281
Open Access | Times Cited: 16
Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network
Hyunho Seok, Shihoon Son, Sagar Bhaurao Jathar, et al.
Sensors (2023) Vol. 23, Iss. 6, pp. 3118-3118
Open Access | Times Cited: 16
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
Tae‐Hyeon Kim, Hussein Nili, Min‐Hwi Kim, et al.
Applied Physics Letters (2020) Vol. 117, Iss. 15
Closed Access | Times Cited: 40
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
Umbreen Rasheed, Hojeong Ryu, Chandreswar Mahata, et al.
Journal of Alloys and Compounds (2021) Vol. 877, pp. 160204-160204
Closed Access | Times Cited: 35
Advancement in Soft Iontronic Resistive Memory Devices and Their Application for Neuromorphic Computing
Muhammad Umair Khan, Jungmin Kim, Mahesh Y. Chougale, et al.
Advanced Intelligent Systems (2022) Vol. 5, Iss. 2
Open Access | Times Cited: 26
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Nanoscale Research Letters (2022) Vol. 17, Iss. 1
Open Access | Times Cited: 23
Emulating Neuromorphic and In‐Memory Computing Utilizing Defect Engineering in 2D‐Layered WSeOx and WSe2 Thin Films by Plasma‐Assisted Selenization Process
Mayur Chaudhary, Tzu‐Yi Yang, Chieh‐Ting Chen, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 38
Closed Access | Times Cited: 15
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing
Muhammad Ismail, Maria Rasheed, Sunghun Kim, et al.
ACS Materials Letters (2023) Vol. 5, Iss. 11, pp. 3080-3092
Closed Access | Times Cited: 15
High‐Performance Memristors Based on Few‐Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing
Zhengjin Weng, Haofei Zheng, Lei Wei, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 9
Closed Access | Times Cited: 15
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