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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Ultralow Power Consumption and Large Dynamic Range Synaptic Transistor Based on α-In2Se3 Nanosheets
Bin Tang, Xuan Li, Jianhui Liao, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 2, pp. 598-605
Closed Access | Times Cited: 28

Showing 1-25 of 28 citing articles:

Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing
Chunsheng Chen, Yaoqiang Zhou, Lei Tong, et al.
Advanced Materials (2024)
Open Access | Times Cited: 23
Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials
Fang Yang, Hong Kuan Ng, Xin Ju, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 21
Closed Access | Times Cited: 16
Donor Engineering Tuning the Analog Switching Range and Operational Stability of Organic Synaptic Transistors for Neuromorphic Systems
Yanfei Zhao, Chaohui Su, Guangyue Shen, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 36
Closed Access | Times Cited: 39
2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing
Xuwen Xia, Wen Huang, Pengjie Hang, et al.
ACS Materials Letters (2023) Vol. 5, Iss. 4, pp. 1109-1135
Closed Access | Times Cited: 33
Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors
Yitong Chen, Dingwei Li, Huihui Ren, et al.
Small (2022) Vol. 18, Iss. 45
Closed Access | Times Cited: 31
2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects
Chloe Leblanc, Seunguk Song, Deep Jariwala
Current Opinion in Solid State and Materials Science (2024) Vol. 32, pp. 101178-101178
Open Access | Times Cited: 6
A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe2/In2Se3 Ferroelectric Heterostructure
Xuan Li, Shuo Li, Bin Tang, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 10
Closed Access | Times Cited: 24
Temperature-Driven α-β Phase Transformation and Enhanced Electronic Property of 2H α-In2Se3
Fengjiao Lyu, Xuan Li, Jiamin Tian, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 20, pp. 23637-23644
Closed Access | Times Cited: 22
Flexible Temperature Sensor with 2D In2Se3 Ferroelectric‐Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity
Taebin Lim, Junmi Lee, Jin Jang
Small (2025)
Closed Access
Artificial Synapse with High Weight-Updating Performance Based on Charge-Trapping Mechanism
Zishuo Han, Yanhui Xing, Yu Lin, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Tunable Synaptic Plasticity in 2D Ferroelectric Semiconductor Transistor for High-Precision Neuromorphic Computing
Tingting Ma, Yichen Wei
ACS Applied Electronic Materials (2025)
Closed Access
Polar Ohmic Contact Switching with a Ferroelectric Metal
Eunji Hwang, Seungil Baek, Woohyun Cho, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Resistive Switching in α-In2Se3 Lateral Field-Effect Transistors
Ting-Ching Chu, Hyeonseon Choi, Christopher Mead, et al.
ACS Nano (2025)
Closed Access
Non‐Volatile Reconfigurable p–n Junction Utilizing In‐Plane Ferroelectricity in 2D WSe2/α‐In2Se3 Asymmetric Heterostructures
Michael Uzhansky, Subhrajit Mukherjee, G. Vijayan, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 8
Open Access | Times Cited: 9
Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory
Aniello Pelella, Kimberly Intonti, Loredana Viscardi, et al.
Journal of Physics and Chemistry of Solids (2023) Vol. 183, pp. 111653-111653
Open Access | Times Cited: 8
Triboelectric potential tuned oxide artificial tactile sensory platform with ultra-low power consumption
Xin Li Chen, Xin Huang, Yan Li, et al.
Applied Materials Today (2023) Vol. 36, pp. 102034-102034
Closed Access | Times Cited: 8
Transistor-Based Synaptic Devices for Neuromorphic Computing
Wen Huang, Huixing Zhang, Zhengjian Lin, et al.
Crystals (2024) Vol. 14, Iss. 1, pp. 69-69
Open Access | Times Cited: 2
Full‐vdW Heterosynaptic Memtransistor with the Ferroelectric Inserted Functional Layer and its Neuromorphic Applications
Zongjie Shen, Alei Li, Qinan Wang, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 2
Realizing multiple non-volatile resistance states in a two-dimensional domain wall ferroelectric tunneling junction
Minzhi Dai, Zhiyuan Tang, Xin Luo, et al.
Nanoscale (2023) Vol. 15, Iss. 20, pp. 9171-9178
Closed Access | Times Cited: 6
Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory
Taebin Lim, Jae Heon Lee, Dong-Gyu Kim, et al.
Advanced Materials (2023) Vol. 36, Iss. 4
Closed Access | Times Cited: 4
In2Se3 Synthesized by the FWF Method for Neuromorphic Computing
Jaeho Shin, Jingon Jang, Chi Hun Choi, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐k Laminates
Yushan Li, Ruiqiang Tao, Beijing Zhang, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 9
Closed Access | Times Cited: 7
Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing
Byeong Hyeon Lee, Ji Ye Lee, Akash Kumar, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 12
Closed Access | Times Cited: 5
Photoluminescence of bulk α -In2Se3 crystals irradiated by high-energy electrons
A. Lobanov, М. А. Сулимов, D. I. Radzivonchik, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 26
Closed Access | Times Cited: 2
High-Performance Memristive Synapse Based on Space-Charge-Limited Conduction in LiNbO3
Youngmin Lee, Sejoon Lee
Nanomaterials (2024) Vol. 14, Iss. 23, pp. 1884-1884
Open Access
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