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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter
Hsuan Chang, Chi‐Hsin Huang, Kenji Nomura
ACS Applied Electronic Materials (2021) Vol. 3, Iss. 11, pp. 4943-4949
Closed Access | Times Cited: 21

Showing 21 citing articles:

High-mobility wide bandgap amorphous gallium oxide thin-film transistors for NMOS inverters
Yong Zhang, Chi‐Hsin Huang, Kenji Nomura
Applied Physics Reviews (2024) Vol. 11, Iss. 1
Open Access | Times Cited: 8
High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates
Mitta Divya, Jyoti Ranjan Pradhan, Sushree Sangita Priyadarsini, et al.
Small (2022) Vol. 18, Iss. 32
Closed Access | Times Cited: 32
Electrically and environmentally stable nitric acid-assisted SnO2 films for the active channel layer of thin-film transistors
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, et al.
Materials Today Advances (2025) Vol. 26, pp. 100575-100575
Closed Access
Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistors
Chi‐Hsin Huang, Ruei‐Hong Cyu, Yu‐Lun Chueh, et al.
Nature Communications (2025) Vol. 16, Iss. 1
Open Access
Inkjet‐Printed, Deep Subthreshold Operated Pseudo‐CMOS Inverters with High Voltage Gain and Low Power Consumption
Jyoti Ranjan Pradhan, Manvendra Singh, Subho Dasgupta
Advanced Electronic Materials (2022) Vol. 8, Iss. 11
Closed Access | Times Cited: 18
Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors
Candell Grace Paredes Quino, Juan Paolo Bermundo, Hidenori Kawanishi, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 1, pp. 505-513
Open Access | Times Cited: 3
In-situ Ar plasma treatment as a low thermal budget technique for high performance InGaSnO thin film transistors fabricated using magnetron sputtering
Mengzhen Hu, Lei Xu, Xinnan Zhang, et al.
Applied Surface Science (2022) Vol. 604, pp. 154621-154621
Closed Access | Times Cited: 13
How to print high-mobility metal oxide transistors—Recent advances in ink design, processing, and device engineering
William J. Scheideler, Vivek Subramanian
Applied Physics Letters (2022) Vol. 121, Iss. 22
Closed Access | Times Cited: 11
Outstanding High Field‐Effect Mobility of 299 cm2 V−1 s−1 by Nitrogen‐Doped SnO2 Nanosheet Thin‐Film Transistor
Pheiroijam Pooja, Chien Chun, Shi‐Hao Zeng, et al.
Advanced Materials Technologies (2023) Vol. 8, Iss. 7
Closed Access | Times Cited: 6
Additives in Nanocrystalline Tin Dioxide: Recent Progress in the Characterization of Materials for Gas Sensor Applications
Darya Filatova, M. N. Rumyantseva
Materials (2023) Vol. 16, Iss. 20, pp. 6733-6733
Open Access | Times Cited: 6
Combustion-assisted low-temperature solution process for high-performance SnO2 thin-film transistors
Bongho Jang, Jaewon Jang, Jae Eun Jang, et al.
Ceramics International (2022) Vol. 48, Iss. 14, pp. 20591-20598
Closed Access | Times Cited: 9
High-performance tin oxide field-effect transistors deposited by thermal atomic layer deposition
Chanhyeok Park, Seon-Chang Kim, Dawon Lee, et al.
Materials Today Communications (2023) Vol. 37, pp. 107064-107064
Closed Access | Times Cited: 4
High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process
Zengcai Song, Mengzhen Hu, Xinnan Zhang, et al.
Thin Solid Films (2024) Vol. 795, pp. 140309-140309
Closed Access | Times Cited: 1
High-performance ultrathin solution-processed SnO2 top-gate thin-film transistors by constructing high-quality dielectric/channel interface
Fenglan Kuang, Jinxuan Wang, Jun Zhao, et al.
Surfaces and Interfaces (2024) Vol. 48, pp. 104333-104333
Closed Access | Times Cited: 1
Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment
Yinli Lu, Xiaochuang Dai, Jianwen Yang, et al.
Vacuum (2024) Vol. 225, pp. 113208-113208
Closed Access | Times Cited: 1
Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches
Jyoti Ranjan Pradhan, Sushree Sangita Priyadarsini, Sanjana R. Nibgoor, et al.
Exploration (2024)
Open Access | Times Cited: 1
Ultrathin α-Bi2O3 Thin-Film Transistor for Cost-Effective Oxide-TFT Inverters
Liang Zhang, Chi‐Hsin Huang, Ruei‐Hong Cyu, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 44, pp. 60548-60555
Closed Access | Times Cited: 1
Effect of SiO2 gate insulator on electrical performance of solution processed SnO2-Based thin film phototransistor
Seda Aktas, Müjdat Çağlar
Physica B Condensed Matter (2023) Vol. 670, pp. 415337-415337
Closed Access | Times Cited: 3
Effect of Ga on the Morphology of SnO<sub>2</sub> Nano/Micro-Crystals Grown by a Thermal Evaporation Method
Geun-Hyoung Lee
Korean Journal of Metals and Materials (2024) Vol. 62, Iss. 7, pp. 558-563
Open Access
Impact of UV annealing on the hole effective mobility in SnO pFET
Shi‐Hao Zeng, Pheiroijam Pooja, Jiancheng Wu, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access
In-Situ Ar Plasma Treatment as a Low Thermal Budget Technique for High Performance Ingasno Thin Film Transistors Fabricated Using Magnetron Sputtering
Mengzhen Hu, Lei Xu, Xinnan Zhang, et al.
SSRN Electronic Journal (2022)
Closed Access
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