OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices
Zhenhai Li, Jinchen Wei, Jialin Meng, et al.
Nano Letters (2023) Vol. 23, Iss. 10, pp. 4675-4682
Closed Access | Times Cited: 16
Zhenhai Li, Jinchen Wei, Jialin Meng, et al.
Nano Letters (2023) Vol. 23, Iss. 10, pp. 4675-4682
Closed Access | Times Cited: 16
Showing 16 citing articles:
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Y. P. Feng, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 29
Chao Zhou, Liyang Ma, Y. P. Feng, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 29
Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions
Eunjin Lim, Dahye Kim, Jongmin Park, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 47, pp. 473001-473001
Closed Access | Times Cited: 4
Eunjin Lim, Dahye Kim, Jongmin Park, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 47, pp. 473001-473001
Closed Access | Times Cited: 4
Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization
Sunghun Kim, J. Kim, Dahye Kim, et al.
APL Materials (2023) Vol. 11, Iss. 10
Open Access | Times Cited: 10
Sunghun Kim, J. Kim, Dahye Kim, et al.
APL Materials (2023) Vol. 11, Iss. 10
Open Access | Times Cited: 10
Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In2Se3 Ferroelectric Tunnel Junctions
Yingjie Luo, Jiwei Chen, Aumber Abbas, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 34
Closed Access | Times Cited: 3
Yingjie Luo, Jiwei Chen, Aumber Abbas, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 34
Closed Access | Times Cited: 3
Gradient Zn-doped HfCeO ferroelectric synapse with fast domain switching
Junhui Wang, Jiajia Liao, Tong Zhu, et al.
Chemical Engineering Journal (2025), pp. 163407-163407
Closed Access
Junhui Wang, Jiajia Liao, Tong Zhu, et al.
Chemical Engineering Journal (2025), pp. 163407-163407
Closed Access
Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications
Hanbin Chen, Chia‐Hsun Hsu, Wan-Yu Wu, et al.
Applied Surface Science (2024) Vol. 665, pp. 160305-160305
Closed Access | Times Cited: 3
Hanbin Chen, Chia‐Hsun Hsu, Wan-Yu Wu, et al.
Applied Surface Science (2024) Vol. 665, pp. 160305-160305
Closed Access | Times Cited: 3
Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications
Yongkai Liu, Tianyu Wang, Kang Xu, et al.
Materials Horizons (2023) Vol. 11, Iss. 2, pp. 490-498
Closed Access | Times Cited: 7
Yongkai Liu, Tianyu Wang, Kang Xu, et al.
Materials Horizons (2023) Vol. 11, Iss. 2, pp. 490-498
Closed Access | Times Cited: 7
Sub-5nm Al-doped HfO2 ferroelectric thin films compatible with 3D NAND process
Jiajia Liao, Wanqian Shi, Jiangheng Yang, et al.
Journal of Alloys and Compounds (2024) Vol. 1007, pp. 176327-176327
Closed Access | Times Cited: 2
Jiajia Liao, Wanqian Shi, Jiangheng Yang, et al.
Journal of Alloys and Compounds (2024) Vol. 1007, pp. 176327-176327
Closed Access | Times Cited: 2
PEALD deposited aluminum hafnium mixed oxide dielectrics for amorphous-IGZO TFTs
Hanbin Chen, Wan-Yu Wu, Yao-Tian Wang, et al.
Ceramics International (2023) Vol. 50, Iss. 3, pp. 5350-5362
Closed Access | Times Cited: 5
Hanbin Chen, Wan-Yu Wu, Yao-Tian Wang, et al.
Ceramics International (2023) Vol. 50, Iss. 3, pp. 5350-5362
Closed Access | Times Cited: 5
Exploring the role of TiN electrodes in the formation of ferroelectric HfxZr1-xO2 thin films through transmission electron microscopy
Sojin Kim, Jaewook Lee, Jong Hyeok Seo, et al.
Journal of the Korean Ceramic Society (2024) Vol. 61, Iss. 2, pp. 327-334
Closed Access | Times Cited: 1
Sojin Kim, Jaewook Lee, Jong Hyeok Seo, et al.
Journal of the Korean Ceramic Society (2024) Vol. 61, Iss. 2, pp. 327-334
Closed Access | Times Cited: 1
Achieving the large remanent polarization of top heavily doped Al:HfO2 nanofilms embedded with Al-rich interlayers and revealing the underlying phase transition kinetics from atomic structure modelling
Lulu Yao, Sambit Das, Haoliang Liu, et al.
Thin Solid Films (2024), pp. 140596-140596
Closed Access | Times Cited: 1
Lulu Yao, Sambit Das, Haoliang Liu, et al.
Thin Solid Films (2024), pp. 140596-140596
Closed Access | Times Cited: 1
HfAlOx-based ferroelectric memristor for nociceptor and synapse functions
Dongyeol Ju, Yongjin Park, Minseo Noh, et al.
The Journal of Chemical Physics (2024) Vol. 161, Iss. 8
Closed Access | Times Cited: 1
Dongyeol Ju, Yongjin Park, Minseo Noh, et al.
The Journal of Chemical Physics (2024) Vol. 161, Iss. 8
Closed Access | Times Cited: 1
Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film
Minjin Kim, Cheol Jun Kim, Bo Soo Kang
Nanomaterials (2023) Vol. 13, Iss. 14, pp. 2146-2146
Open Access | Times Cited: 2
Minjin Kim, Cheol Jun Kim, Bo Soo Kang
Nanomaterials (2023) Vol. 13, Iss. 14, pp. 2146-2146
Open Access | Times Cited: 2
Effect of ternary compound on HfO2-Al2O3 mixture coatings revealed by solid-state NMR and TOF-SIMS
Jiahui Wen, Liang Ke, Jinjun Ren, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108785-108785
Closed Access
Jiahui Wen, Liang Ke, Jinjun Ren, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108785-108785
Closed Access
Robust ferroelectric and low coercive field in ZrO2 thin film through wide chemical-processing window
X. G. Liu, Hangren Li, Dongxing Zheng, et al.
Nano Today (2024) Vol. 59, pp. 102470-102470
Closed Access
X. G. Liu, Hangren Li, Dongxing Zheng, et al.
Nano Today (2024) Vol. 59, pp. 102470-102470
Closed Access
Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Zhenhai Li, Sen Tang, Tianyu Wang, et al.
Advanced Science (2024)
Closed Access
Zhenhai Li, Sen Tang, Tianyu Wang, et al.
Advanced Science (2024)
Closed Access
Doping engineering to reduce the coercive field of ferroelectric Zr O 2
Dipti Gupta, Pawan Kumar, Jun Hee Lee
Physical Review Applied (2024) Vol. 22, Iss. 6
Closed Access
Dipti Gupta, Pawan Kumar, Jun Hee Lee
Physical Review Applied (2024) Vol. 22, Iss. 6
Closed Access
