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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Resistive switching performance and synaptic behavior of La-doped HfO2 thin film
Wu-Wen-Bo Zhang, Yan‐Ping Jiang, Xin‐Gui Tang, et al.
Thin Solid Films (2023) Vol. 774, pp. 139842-139842
Closed Access | Times Cited: 11

Showing 11 citing articles:

New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO2 Ferroelectric Memristor
Junlin Fang, Zhenhua Tang, Xi-Cai Lai, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 24, pp. 31348-31362
Closed Access | Times Cited: 9
Analog bipolar resistive switching in Sm doped BaTiO3 thin films for Opto-memristor application
Vaishali Chandmare, Parvender Sheoran, Kusum Kumari, et al.
Materials Chemistry and Physics (2025), pp. 130764-130764
Closed Access | Times Cited: 1
Resistive switching properties and photoelectric synaptic behavior of multilayer structured Au/Ce:HfO2/Al2O3/Ce:HfO2/FTO films
Jiayu Tang, Yan‐Ping Jiang, Yunfeng Su, et al.
Journal of Alloys and Compounds (2025), pp. 179114-179114
Closed Access
Yttrium Doping Effects on the Resistive Random Access Memory Characteristics of Sputtered HfOx Films and Mechanism Investigations
Kuan-Lin Yeh, Po-An Shih, K. Y. Hsu, et al.
ACS Applied Electronic Materials (2025)
Open Access
Effects of Dy on structural, morphology, optical, and resistive switching properties of HfO2 thin films
S. Gálvez-Barbosa, Luis A. González, G. Rosas
Thin Solid Films (2024) Vol. 793, pp. 140278-140278
Closed Access | Times Cited: 1
Resistive switching and synaptic characteristics of Hf-doped ZnO sandwiched between HfO2-based memristors for neuromorphic computing
Jian‐Hao Feng, Jiajia Liao, Yan‐Ping Jiang, et al.
Materials Today Communications (2024) Vol. 40, pp. 109805-109805
Closed Access | Times Cited: 1
Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness
Linlin Li, Zhijiang Ye, Meixia Wu, et al.
Journal of Alloys and Compounds (2024) Vol. 1009, pp. 176890-176890
Closed Access | Times Cited: 1
Enhancing the Resistive Switching Properties of Nd2Ti2O7 Thin Films through Ca-Doping and Thermal Treatments
Wanyu Liu, Chia-Chien Wu, Tsung-Hsien Hsu, et al.
Journal of Alloys and Compounds (2024), pp. 177083-177083
Closed Access | Times Cited: 1
Effect of Annealing Conditions on Resistive Switching in Hafnium Oxide-based MIM Devices for Low-power RRAM
Kifayat H. Mir, Tarun Garg
Physica Scripta (2024) Vol. 99, Iss. 12, pp. 125941-125941
Closed Access | Times Cited: 1
Controlling the Digital-to-Analog Switching in Hfo2-Based Memristors Via Modulating the Oxide Thickness
Linlin Li, Zhijiang Ye, Meixia Wu, et al.
(2024)
Closed Access
Impact of lanthanum doping on the electronic structure of oxygen vacancies in hafnium oxide
Timofey V. Perevalov, Damir R. Islamov
Computational Materials Science (2023) Vol. 233, pp. 112708-112708
Closed Access | Times Cited: 1
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