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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Parameter extraction techniques for the analysis and modeling of resistive memories
D. Maldonado, Samuel Aldana, Mireia Bargalló González, et al.
Microelectronic Engineering (2022) Vol. 265, pp. 111876-111876
Open Access | Times Cited: 18

Showing 18 citing articles:

Variability in Resistive Memories
J.B. Roldán, E. Miranda, D. Maldonado, et al.
Advanced Intelligent Systems (2023) Vol. 5, Iss. 6
Open Access | Times Cited: 92
Bottom electrode reactivity and bonding strength effect on resistive switching in HfO2-based RRAM
Sung-Woo Jung, Kyeong‐Bae Lee, Moon‐Soo Kim, et al.
Materials Science in Semiconductor Processing (2025) Vol. 192, pp. 109438-109438
Closed Access
Statistical, simulation and modeling analysis of variability in memristors with single and bilayer dielectrics of HfO2 and Al2O3, a comparison
A. Cantudo, F. Jiménez-Molinos, Paloma García-Villanova Ruiz, et al.
Chaos Solitons & Fractals (2025) Vol. 196, pp. 116352-116352
Closed Access
Variability in HfO2-based memristors described with a new bidimensional statistical technique
Christian Acal, D. Maldonado, A. Cantudo, et al.
Nanoscale (2024) Vol. 16, Iss. 22, pp. 10812-10818
Open Access | Times Cited: 3
TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance
D. Maldonado, A. Cantudo, Eduardo Pérez, et al.
Frontiers in Neuroscience (2023) Vol. 17
Open Access | Times Cited: 7
Resistive switching properties of hafnium oxide thin-films sputtered at different oxygen partial pressures
N. Arun, M. M. Neethish, V.V. Ravi Kanth Kumar, et al.
Journal of Materials Science Materials in Electronics (2024) Vol. 35, Iss. 3
Closed Access | Times Cited: 2
Soybean-based memristor for multilevel data storage and emulation of synaptic behavior
Lu Wang, Wenhao Li, Dianzhong Wen
Microelectronic Engineering (2022) Vol. 267-268, pp. 111911-111911
Closed Access | Times Cited: 11
Improving the switching behavior of TaOx/HfO2-based non-volatile memristors by embedded Ti and Pt nano-islands
Chunwei Huang, Zhaozhu Qu, Fanlin Long, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108829-108829
Closed Access | Times Cited: 1
A statistical and modeling study on the effects of radiation on Au/Ta/ZrO2(Y)/Pt/Ti memristive devices
D. Maldonado, A. Cantudo, D.V. Guseinov, et al.
Chaos Solitons & Fractals (2024) Vol. 191, pp. 115909-115909
Closed Access | Times Cited: 1
Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
Cristina Aguilera-Pedregosa, D. Maldonado, Mireia Bargalló González, et al.
Micromachines (2023) Vol. 14, Iss. 3, pp. 630-630
Open Access | Times Cited: 3
Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance
Raquel Rodríguez-Lamas, Dolors Pla, Caroline Pirovano, et al.
Materials Today Electronics (2023) Vol. 5, pp. 100054-100054
Open Access | Times Cited: 2
In-Depth Analysis of Transistor Influence on OxRAM Performance in Memory Bitcell, With Technology Scaling Perspectives
Flavien Berthaud, Sébastien Martin, Jean Rottner, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 4, pp. 2721-2728
Closed Access
Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications
Francesc Aràndiga, D. Barrera, Salah Eddargani, et al.
Mathematics and Computers in Simulation (2024) Vol. 223, pp. 158-170
Open Access
Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
D. Maldonado, A. Cantudo, Keerthi Dorai Swamy Reddy, et al.
Materials Science in Semiconductor Processing (2024) Vol. 182, pp. 108726-108726
Open Access
Statistical, Simulation and Modeling Analysis of Variability in Memristor with Single and Bilayer Dielectrics of Hfo2 and Al2o3, a Comparison
A. Cantudo, F. Jiménez-Molinos, Paloma García-Villanova Ruiz, et al.
(2024)
Closed Access
Variability and power enhancement of current controlled resistive switching devices
Guillermo Vinuesa, H. García, José Miguel Lendínez, et al.
Microelectronic Engineering (2023) Vol. 276, pp. 112008-112008
Open Access | Times Cited: 1
Cycle-to-cycle variability analysis of Ti/Al2O3-based memristors
Julius Rasbach, M. Saludes-Tapia, Mireia Bargalló González, et al.
Solid-State Electronics (2023) Vol. 210, pp. 108791-108791
Open Access
Characterization and Modeling of Variability in Commercial Self-Directed Channel Memristors
Ignacio Jiménez-Gallo, Pablo Alex-Lázaro, Guillermo Botella, et al.
(2023), pp. 1-4
Closed Access
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