OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles
Hassan Algadi, Chandreswar Mahata, Turki Alsuwian, et al.
Materials Letters (2021) Vol. 298, pp. 130011-130011
Closed Access | Times Cited: 21

Showing 21 citing articles:

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence
Muhammad Ismail, Chandreswar Mahata, Osung Kwon, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 3, pp. 1288-1300
Closed Access | Times Cited: 39

Atomic Layer Deposition Films for Resistive Random‐Access Memories
Chunxue Hao, Jun Peng, Robert Zierold, et al.
Advanced Materials Technologies (2024) Vol. 9, Iss. 16
Open Access | Times Cited: 8

Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Applied Surface Science (2022) Vol. 581, pp. 152427-152427
Closed Access | Times Cited: 37

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
Markus Hellenbrand, Judith L. MacManus‐Driscoll
Nano Convergence (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 18

Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
Chandreswar Mahata, Juyeong Pyo, Beomki Jeon, et al.
Advanced Composites and Hybrid Materials (2023) Vol. 6, Iss. 4
Closed Access | Times Cited: 17

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Nanoscale Research Letters (2022) Vol. 17, Iss. 1
Open Access | Times Cited: 23

Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Ceramics International (2023) Vol. 49, Iss. 11, pp. 19032-19042
Closed Access | Times Cited: 14

Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application
Vivek Pratap Singh, Chandra Prakash Singh, Harsh Ranjan, et al.
Materials Letters (2023) Vol. 344, pp. 134431-134431
Closed Access | Times Cited: 13

Exploitation of temporal dynamics and synaptic plasticity in multilayered ITO/ZnO/IGZO/ZnO/ITO memristor for energy-efficient reservoir computing
Muhammad Ismail, Seung Jun Lee, Maria Rasheed, et al.
Journal of Material Science and Technology (2025)
Closed Access

Energy-efficient synaptic devices based on planar structured h-BN memristor
Yisen Wang, Haowei Liu, Pei Liu, et al.
Journal of Alloys and Compounds (2022) Vol. 909, pp. 164775-164775
Closed Access | Times Cited: 13

Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition
Muhammad Ismail, Maria Rasheed, Yongjin Park, et al.
The Journal of Chemical Physics (2024) Vol. 161, Iss. 13
Closed Access | Times Cited: 2

Conductance quantization control and neuromorphic properties in Pt-nanoparticle incorporated HfAlOx alloy memristor
Chandreswar Mahata, Muhammad Ismail, Sungjun Kim
Applied Physics Letters (2021) Vol. 119, Iss. 22
Closed Access | Times Cited: 17

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films
Ghulam Abbas, Muhammad Hassan, Qasim Khan, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 9
Closed Access | Times Cited: 10

HfAlO-based ferroelectric memristors for artificial synaptic plasticity
Jie Yang, Zixuan Jian, Zhongrong Wang, et al.
Frontiers of Physics (2023) Vol. 18, Iss. 6
Closed Access | Times Cited: 5

Memristor Based on a Lotus Root/Lactalbumin Bilayer as a Biocompatible Artificial Synapse for Neuromorphic Electronics
Yanmei Sun, Qi Yuan, Yufei Wang, et al.
ACS Sustainable Chemistry & Engineering (2023) Vol. 11, Iss. 43, pp. 15710-15720
Closed Access | Times Cited: 4

Dynamic FeOx/FeWOx nanocomposite memristor for neuromorphic and reservoir computing
Muhammad Ismail, Maria Rasheed, Yongjin Park, et al.
Nanoscale (2024)
Closed Access | Times Cited: 1

Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers
Zongjie Shen, Chun Zhao, Yina Liu, et al.
2022 19th International SoC Design Conference (ISOCC) (2021)
Closed Access | Times Cited: 5

Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure
Cheng-Han Lyu, Rajneesh Chaurasiya, Bo-Ru Lai, et al.
Applied Physics Letters (2022) Vol. 121, Iss. 18
Closed Access | Times Cited: 3

Effect of a “Zn Bridge” on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials
Jiacong Guo, Yankun Zhang, Guofeng Tian, et al.
Chemistry - A European Journal (2021) Vol. 27, Iss. 49, pp. 12526-12534
Closed Access | Times Cited: 3

Thickness dependent resistive switching behaviors in Ta2O5 layer at low temperature: Towards flexible, invisible, cryo-electronic applications in aerospace
Ajit Kumar, Krishnaiah Mokurala, Dhananjay Mishra, et al.
Materials Letters (2022) Vol. 319, pp. 132272-132272
Closed Access | Times Cited: 2

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