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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Aqueous-solution-driven HfGdO gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits
Yongchun Zhang, Gang He, Wenhao Wang, et al.
Journal of Material Science and Technology (2020) Vol. 50, pp. 1-12
Closed Access | Times Cited: 41

Showing 1-25 of 41 citing articles:

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits
Yongchun Zhang, Gang He, Leini Wang, et al.
ACS Nano (2022) Vol. 16, Iss. 3, pp. 4961-4971
Closed Access | Times Cited: 63
Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors
Cheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 5, pp. 2317-2323
Closed Access | Times Cited: 18
Recent advances in flexible solution-processed thin-film transistors for wearable electronics
Ma Li Ya, Norhayati Soin, Siti Nabila Aidit, et al.
Materials Science in Semiconductor Processing (2023) Vol. 165, pp. 107658-107658
Closed Access | Times Cited: 17
Cu2O p-type Thin-Film Transistors with Enhanced Switching Characteristics for CMOS Logic Circuit by Controlling Deposition Condition and Annealing in the N2 Atmosphere
Jae‐Hak Lee, Jiyeon Kim, Minho Jin, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 2, pp. 1123-1130
Closed Access | Times Cited: 16
High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor
Myeong Gil Chae, Jina Kim, Hee Won Jang, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 4, pp. 1992-1999
Closed Access | Times Cited: 13
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer
Cheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
Scientific Reports (2024) Vol. 14, Iss. 1
Open Access | Times Cited: 5
Effect of Annealing Temperature on the Microstructure and Optical Properties of Lanthanum-Doped Hafnium Oxide
Xiangduo Cui, Kamale Tuokedaerhan, Haotian Cai, et al.
Coatings (2022) Vol. 12, Iss. 4, pp. 439-439
Open Access | Times Cited: 20
Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors
Seung-Hyun Lim, Tae In Kim, Ick-Joon Park, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 9, pp. 4816-4825
Closed Access | Times Cited: 12
Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control
Donghyeon Lee, Dong-Gyu Kim, Minseok Kim, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 11, pp. 5608-5616
Closed Access | Times Cited: 16
Electrical Performance and Reliability Enhancement of a-IGZO TFTs via Post-N2O Plasma Optimization
Hyojung Kim, Chanhee Han, Dongbhin Kim, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 7, pp. 3611-3616
Closed Access | Times Cited: 9
Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO transistors and exploration in digital circuits
Bing Yang, Gang He, Qian Gao, et al.
Journal of Material Science and Technology (2021) Vol. 87, pp. 143-154
Closed Access | Times Cited: 18
Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits
Leini Wang, Gang He, Wenhao Wang, et al.
Journal of Material Science and Technology (2023) Vol. 159, pp. 41-51
Closed Access | Times Cited: 7
Solution-Driven HfLaOx-Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters
Wenhao Wang, Gang He, Leini Wang, et al.
IEEE Transactions on Electron Devices (2021) Vol. 68, Iss. 9, pp. 4437-4443
Closed Access | Times Cited: 16
Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdO x Bilayer Gate Dielectrics
Leini Wang, Gang He, Shanshan Jiang, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 6, pp. 3169-3174
Closed Access | Times Cited: 12
Edible Dielectric Composite for the Enhancement of Performance and Electromechanical Stability of Eco-Friendly Flexible Organic Transistors
Gargi Konwar, Pulkit Saxena, Sachin Rahi, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 10, pp. 5055-5064
Closed Access | Times Cited: 12
Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide
Jidong Jin, Xiaoyu Lin, Jiawei Zhang, et al.
Advanced Electronic Materials (2022) Vol. 9, Iss. 3
Open Access | Times Cited: 12
All-Solution-Driven Thin-Film Transistor With Low Power Dissipation for Logic Electronics and Neuronal Synapse
Wenhao Wang, Gang He, Yujiao Li, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 7, pp. 3590-3597
Closed Access | Times Cited: 6
Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition
Qi-Zhen Chen, Chun-Yan Shi, Ming-Jie Zhao, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 3, pp. 448-451
Closed Access | Times Cited: 6
A review of rare-earth oxide films as high k dielectrics in MOS devices — Commemorating the 100th anniversary of the birth of Academician Guangxian Xu
Shuan Li, Youyu Lin, Siyao Tang, et al.
Journal of Rare Earths (2020) Vol. 39, Iss. 2, pp. 121-128
Closed Access | Times Cited: 15
Low Voltage Operable Eco-Friendly Water-Induced LiOx Dielectric Based Organic Field Effect Transistor
Prashant Kumar, Vishwambahar Nath Mishra, Rajiv Prakash
IEEE Electron Device Letters (2023) Vol. 44, Iss. 4, pp. 638-641
Closed Access | Times Cited: 5
Optimization of electrical performance and stability of fully solution-driven α-InGaZnO thin-film transistors by graphene quantum dots
Xiaofen Xu, Gang He, Leini Wang, et al.
Journal of Material Science and Technology (2022) Vol. 141, pp. 100-109
Closed Access | Times Cited: 8
Effect of sintering temperature on the chemical bonding, electronic structure and electrical transport properties of β-Ga1.9Fe0.1O3 compounds
Swadipta Roy, C.V. Ramana
Journal of Material Science and Technology (2020) Vol. 67, pp. 135-144
Open Access | Times Cited: 12
High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics
Filipp S. Talalaev, Sergey Yu. Luchkin, Alexander V. Mumyatov, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 4, pp. 2000-2006
Closed Access | Times Cited: 4
Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability
Gergely Tarsoly, Jae‐Yun Lee, Kwan-Jun Heo, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 8, pp. 4308-4315
Closed Access | Times Cited: 4
Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlOx Gate Insulator with SiO2 Blocking Layer
Yuna Kim, Byunglib Jung, Md Mobaidul Islam, et al.
Advanced Materials Technologies (2024)
Closed Access | Times Cited: 1
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