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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor
Jiangqiu Wang, Bai Sun, Guangdong Zhou, et al.
Journal of Alloys and Compounds (2023) Vol. 939, pp. 168761-168761
Closed Access | Times Cited: 23

Showing 23 citing articles:

Memristor-based neural networks: a bridge from device to artificial intelligence
Zelin Cao, Bai Sun, Guangdong Zhou, et al.
Nanoscale Horizons (2023) Vol. 8, Iss. 6, pp. 716-745
Closed Access | Times Cited: 68
Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review
Girish U. Kamble, Akhilesh P. Patil, Rajanish K. Kamat, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 5, pp. 2454-2481
Closed Access | Times Cited: 33
Advances in two-dimensional heterojunction for sophisticated memristors
Shiwei Qin, Ye Tao, Ting Hu, et al.
Materials Today Physics (2024) Vol. 41, pp. 101336-101336
Closed Access | Times Cited: 9
The g-C3N4-TiO2 nanocomposite for non-volatile memory and artificial synaptic device applications
V. B. Patil, O.Y. Pawar, Harshal S. Patil, et al.
Journal of Alloys and Compounds (2023) Vol. 962, pp. 171024-171024
Open Access | Times Cited: 18
Nonvolatile resistive switching memory behavior of the TiOx-based memristor
Hosameldeen Elshekh, Hongyan Wang, Shouhui Zhu, et al.
Chemical Physics (2024) Vol. 580, pp. 112217-112217
Closed Access | Times Cited: 5
Robust Resistive Switching in Solution-Processed Copper Bromide Binary Metal Halide System
Juyoung Jin, Youngseok Song, Ankita Nikam, et al.
Journal of Alloys and Compounds (2025), pp. 178685-178685
Closed Access
Multi-functional Synaptic Memristor for Neuromorphic Pattern Recognition and Image Compression
Hao Sun, Siyuan Li, Xiaofei Dong, et al.
Materials Today Physics (2025), pp. 101684-101684
Closed Access
Recent Progress on Heterojunction‐Based Memristors and Artificial Synapses for Low‐Power Neural Morphological Computing
Zhi‐Xiang Yin, Hao Chen, Shuo Yin, et al.
Small (2025)
Closed Access
Quantum dot-based memristors for information processing and artificial intelligence applications
Daoming Tian, Chuan Ke, Bai Sun, et al.
Nanoscale (2025)
Closed Access
ZnO-ITO/WO3−x heterojunction structured memristor for optoelectronic co-modulation neuromorphic computation
Jianyong Pan, Tong Wu, Wenhao Yang, et al.
Science China Materials (2024) Vol. 67, Iss. 9, pp. 2838-2847
Closed Access | Times Cited: 4
Wearable flexible memristor based on titanium dioxide (TiO2)-Zinc oxide (ZnO) embedded in polyvinyl alcohol (PVA) matrix
Manisha Singh, Surbhi Pathania, P. Chinnamuthu, et al.
Materials Science in Semiconductor Processing (2023) Vol. 170, pp. 107953-107953
Closed Access | Times Cited: 7
TiN/TiOx/WOx/Pt heterojunction memristor for sensory and neuromorphic computing
Dongyeol Ju, Jungwoo Lee, Hyojin So, et al.
Journal of Alloys and Compounds (2024) Vol. 1004, pp. 175830-175830
Closed Access | Times Cited: 2
Flexible TiO2-WO3−x hybrid memristor with enhanced linearity and synaptic plasticity for precise weight tuning in neuromorphic computing
Jianyong Pan, Hao Kan, Zhaorui Liu, et al.
npj Flexible Electronics (2024) Vol. 8, Iss. 1
Open Access | Times Cited: 2
Stable resistive switching behavior of polyvinyl alcohol coating film-based memristor under multiple operating voltages by doping AgNWs
Haotian Liang, Chuan Ke, Bai Sun, et al.
Colloids and Surfaces A Physicochemical and Engineering Aspects (2023) Vol. 675, pp. 132053-132053
Closed Access | Times Cited: 6
Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction
Hosameldeen Elshekh, Hongyan Wang, Chuan Yang, et al.
Journal of Applied Physics (2024) Vol. 135, Iss. 13
Open Access | Times Cited: 1
Voltage controlled polarity switching of photoresponse in graphene oxide-based memristor
Soma Saha, Anindya Datta, Tapanendu Kundu
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 38, pp. 15553-15564
Closed Access | Times Cited: 1
Investigation on the mechanism and a universal structural design method for resistive switching devices
Bowen Yang, Guokun Ma, Xinyu Wan, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 25, pp. 255106-255106
Closed Access
Impact of variation in oxygen partial pressure on the crystallinity and electronic structure of WO3 thin films deposited using Pulsed laser deposition
Sunidhi, S. K. Arora, Vishal Sharma, et al.
Materials Today Proceedings (2024)
Closed Access
Potential for multi-application advancements from doping zirconium (Zr) for improved optical, electrical, and resistive memory properties of zinc oxide (ZnO) thin films
Amit Kumar Chawla, Navjot Hothi, Akula Umamaheswara Rao, et al.
Physica Scripta (2024) Vol. 99, Iss. 9, pp. 095935-095935
Closed Access
Non-volatile WORM memory device based on Moringa Oleifera Lam. for sustainable bioelectronics
Farhana Yasmin Rahman, M. J. Uddin, Debayoti Bhattacharjee, et al.
Deleted Journal (2024) Vol. 245, Iss. 1
Closed Access
Role of sulphur in resistive switching behavior of natural rubber-based memory
Muhammad Awais, Nadras Othman, Mohamad Danial Shafiq, et al.
Nanotechnology (2024) Vol. 36, Iss. 3, pp. 035201-035201
Closed Access
Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO2:Y2O3/SrTiO3 thin films for non-volatile memory devices
Zhihong Yang, Xiaozhong Huang, Hailong Hu, et al.
Journal of Central South University (2024) Vol. 31, Iss. 10, pp. 3674-3687
Closed Access
Optimizing short-term memory in transparent neuromorphic devices via microwave treatment: Enhancing transmittance and relaxation time
Yuseong Jang, Doowon Lee, Myoungsu Chae, et al.
Journal of Alloys and Compounds (2024) Vol. 1010, pp. 178036-178036
Closed Access
NDR effect and negative-set/reset phenomenon in core-shell structure-based memristor under the effect of humidity
Haotian Liang, Chuan Ke, Bai Sun, et al.
Materials Science and Engineering B (2023) Vol. 299, pp. 117059-117059
Closed Access
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