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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses
Muhammad Ismail, Chandreswar Mahata, Haider Abbas, et al.
Journal of Alloys and Compounds (2021) Vol. 862, pp. 158416-158416
Closed Access | Times Cited: 37

Showing 1-25 of 37 citing articles:

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications
Muhammad Ismail, Maria Rasheed, Chandreswar Mahata, et al.
Nano Convergence (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 46
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Journal of Alloys and Compounds (2021) Vol. 892, pp. 162141-162141
Closed Access | Times Cited: 83
Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications
Haider Abbas, Jiayi Li, D. S. Ang
Micromachines (2022) Vol. 13, Iss. 5, pp. 725-725
Open Access | Times Cited: 49
Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence
Muhammad Ismail, Chandreswar Mahata, Osung Kwon, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 3, pp. 1288-1300
Closed Access | Times Cited: 39
All oxide based flexible multi-folded invisible synapse as vision photo-receptor
Ping‐Xing Chen, Debashis Panda, Tseung‐Yuen Tseng
Scientific Reports (2023) Vol. 13, Iss. 1
Open Access | Times Cited: 26
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
Muhammad Ismail, Maria Rasheed, Chandreswar Mahata, et al.
Journal of Alloys and Compounds (2023) Vol. 960, pp. 170846-170846
Closed Access | Times Cited: 25
Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Applied Surface Science (2022) Vol. 581, pp. 152427-152427
Closed Access | Times Cited: 37
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Applied Surface Science (2022) Vol. 599, pp. 153906-153906
Closed Access | Times Cited: 32
Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing
Dayanand Kumar, Saransh Shrivastava, Aftab Saleem, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 5, pp. 2180-2190
Closed Access | Times Cited: 28
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Nanoscale Research Letters (2022) Vol. 17, Iss. 1
Open Access | Times Cited: 23
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing
Muhammad Ismail, Maria Rasheed, Sunghun Kim, et al.
ACS Materials Letters (2023) Vol. 5, Iss. 11, pp. 3080-3092
Closed Access | Times Cited: 15
Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Ceramics International (2023) Vol. 49, Iss. 11, pp. 19032-19042
Closed Access | Times Cited: 14
Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect
Seokyeon Yun, Chandreswar Mahata, Min‐Hwi Kim, et al.
Applied Surface Science (2021) Vol. 579, pp. 152164-152164
Closed Access | Times Cited: 31
Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage
Muhammad Ismail, Haider Abbas, Chandreswar Mahata, et al.
Journal of Material Science and Technology (2021) Vol. 106, pp. 98-107
Closed Access | Times Cited: 27
Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Siqin Li, Jigang Du, Bojing Lu, et al.
Materials Horizons (2023) Vol. 10, Iss. 12, pp. 5643-5655
Closed Access | Times Cited: 11
Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
Muhammad Ismail, Sunghun Kim, Maria Rasheed, et al.
Journal of Alloys and Compounds (2024) Vol. 1003, pp. 175411-175411
Closed Access | Times Cited: 4
Exploitation of temporal dynamics and synaptic plasticity in multilayered ITO/ZnO/IGZO/ZnO/ITO memristor for energy-efficient reservoir computing
Muhammad Ismail, Seung Jun Lee, Maria Rasheed, et al.
Journal of Material Science and Technology (2025)
Closed Access
Zn2SnO4 Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing
Saransh Shrivastava, Yu-Tang Lin, Bhaskar Pattanayak, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 4, pp. 1784-1793
Closed Access | Times Cited: 18
Threshold Switching Memristor Based on the BaTiO3/Nb:SrTiO3 Epitaxial Heterojunction for Neuromorphic Computing
Peilin Liu, Caihong Jia, Weifeng Zhang
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 3, pp. 982-989
Closed Access | Times Cited: 16
Transition between resistive switching modes in asymmetric HfO2-based structures
Olga Permiakova, A. E. Rogozhin, Andrey V. Miakonkikh, et al.
Microelectronic Engineering (2023) Vol. 275, pp. 111983-111983
Closed Access | Times Cited: 10
Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiOxNy/SnOx Memristor for Neuromorphic Systems
Muhammad Ismail, Doohyung Kim, Eunjin Lim, et al.
ACS Materials Letters (2024), pp. 3514-3522
Closed Access | Times Cited: 3
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
Carlos Silva, Jonas Deuermeier, Weidong Zhang, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 11
Open Access | Times Cited: 7
Self-rectifying NiOX/WOX heterojunction synaptic memristor for crossbar architectured reservoir computing system
Hyojin So, Sungjun Kim, Sungjoon Kim
Journal of Alloys and Compounds (2024) Vol. 1003, pp. 175644-175644
Closed Access | Times Cited: 2
Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition
Muhammad Ismail, Maria Rasheed, Yongjin Park, et al.
The Journal of Chemical Physics (2024) Vol. 161, Iss. 13
Closed Access | Times Cited: 2
Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic Characteristics
A. D. Paul, S. Biswas, Avijit Dalal, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 4, pp. 1842-1848
Closed Access | Times Cited: 10
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