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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Two dimensional semiconducting materials for ultimately scaled transistors
Tianyao Wei, Zichao Han, Xinyi Zhong, et al.
iScience (2022) Vol. 25, Iss. 10, pp. 105160-105160
Open Access | Times Cited: 49

Showing 1-25 of 49 citing articles:

Transistor engineering based on 2D materials in the post-silicon era
Senfeng Zeng, Chunsen Liu, Peng Zhou
Nature Reviews Electrical Engineering (2024) Vol. 1, Iss. 5, pp. 335-348
Closed Access | Times Cited: 26
Oxygen Driven Defect Engineering of Monolayer MoS2 for Tunable Electronic, Optoelectronic, and Electrochemical Devices
Irfan Haider Abidi, Sindhu Priya Giridhar, Jonathan O. Tollerud, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 37
Open Access | Times Cited: 25
3D integration of 2D electronics
Darsith Jayachandran, Najam U Sakib, Saptarshi Das
Nature Reviews Electrical Engineering (2024) Vol. 1, Iss. 5, pp. 300-316
Closed Access | Times Cited: 22
Two-Dimensional Materials for Brain-Inspired Computing Hardware
Shreyash Hadke, Min‐A Kang, Vinod K. Sangwan, et al.
Chemical Reviews (2025)
Closed Access | Times Cited: 2
Transfer of 2D Films: From Imperfection to Perfection
Phuong V. Pham, The-Hung Mai, Saroj P. Dash, et al.
ACS Nano (2024) Vol. 18, Iss. 23, pp. 14841-14876
Open Access | Times Cited: 14
Single-Step Synthesis of Ni-Doped MoS2 Nanostructures for Symmetrical Supercapacitor Devices
Abhishek Panghal, Dhirendra Sahoo, Deepak Deepak, et al.
ACS Applied Nano Materials (2024) Vol. 7, Iss. 5, pp. 5358-5371
Closed Access | Times Cited: 10
Solution-processed 2D van der Waals networks: Fabrication strategies, properties, and scalable device applications
Dongjoon Rhee, Deep Jariwala, Jeong Ho Cho, et al.
Applied Physics Reviews (2024) Vol. 11, Iss. 2
Open Access | Times Cited: 8
Sustaining the future: Semiconductor materials and their recovery
Anuj Kumar, Anirudh Thorbole, Ram K. Gupta
Materials Science in Semiconductor Processing (2024) Vol. 185, pp. 108943-108943
Closed Access | Times Cited: 7
A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review
Vishal Narula, Mohit Agarwal, Shekhar Verma
Engineering Research Express (2024) Vol. 6, Iss. 1, pp. 012301-012301
Open Access | Times Cited: 6
Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing
Weihui Sang, Du Xiang, Yi Cao, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 4
Closed Access | Times Cited: 13
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
Jing Chen, Mingyuan Sun, Zhenhua Wang, et al.
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 5
All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
Md. Anamul Hoque, Antony George, Vasudev Ramachandra, et al.
npj 2D Materials and Applications (2024) Vol. 8, Iss. 1
Open Access | Times Cited: 5
High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes
Chiara Mancini, Anacleto Proietti, Giancarlo La Penna, et al.
Advanced Materials Interfaces (2025)
Open Access
Recent advances in CMOS-compatible synthesis and integration of 2D materials
Ajit K. Katiyar, J CHOI, Jong‐Hyun Ahn
Nano Convergence (2025) Vol. 12, Iss. 1
Open Access
Steep Subthreshold Slope in Solution-Gated Indium–Tin–Oxide-Based One-Piece Thin-Film Transistor Enables Highly Sensitive Biosensing
Ritsu Katayama, Xianqi Dong, Toshiya Sakata
ACS Applied Electronic Materials (2025)
Closed Access
Photolithography-Induced Doping and Interface Modulation for High-Performance Monolayer WSe2 P-Type Transistors
Yu-Tung Lin, Yu-Wei Hsu, Zeng-Shevan Fong, et al.
Nano Letters (2025) Vol. 25, Iss. 9, pp. 3571-3578
Closed Access
Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits
Junzhe Kang, Hanwool Lee, Ashwin Tunga, et al.
ACS Nano (2025)
Closed Access
Diffraction studies of WS2 crystallographic ordering during laser MBE growth on Al2O3(0001)
E. Yu. Lobanova, M. V. Dorogov, Vladimir V. Fedorov, et al.
AIP Advances (2025) Vol. 15, Iss. 3
Open Access
Hard X-ray resonant reflectivity studies of ultrathin WS2 layers grown by pulsed laser deposition
С.М. Сутурин, Polina A. Dvortsova, A. M. Korovin, et al.
Journal of Semiconductors (2025) Vol. 46, Iss. 3, pp. 032701-032701
Closed Access
Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
Tien Dat Ngo, Tuyen Huynh, Hanggyo Jung, et al.
Advanced Science (2023) Vol. 10, Iss. 21
Open Access | Times Cited: 12
High-Performance p-Type Transistor in Monolayer 2H-MoTe2
Anjaly Rajendran, Zhiying Wang, Thomas Darlington, et al.
The Journal of Physical Chemistry C (2025)
Closed Access
Exploring Vertical Transition Metal Dichalcogenide Heterostructure MOSFET
U. Malu, J. Charles Pravin, V. Sandeep
(2025), pp. 373-391
Closed Access
Advances in core technologies for semiconductor manufacturing: applications and challenges of atomic layer etching, neutral beam etching and atomic layer deposition
Tzu‐Yi Lee, Pei-Tien Chen, Chien-Chi Huang, et al.
Nanoscale Advances (2025)
Open Access
Rational Design of Stimuli‐Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule‐Programmable Nanoelectronics
José Muñoz
Advanced Materials (2023) Vol. 36, Iss. 8
Open Access | Times Cited: 10
A FinFET-based low-power, stable 8T SRAM cell with high yield
E. Mani, N. Padmaja, Shaik Javid Basha, et al.
AEU - International Journal of Electronics and Communications (2023) Vol. 175, pp. 155102-155102
Closed Access | Times Cited: 9
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