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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Graphene/GeTe van der Waals heterostructure: Functional Schottky device with modulated Schottky barriers via external strain and electric field
Xu Gao, Yanqing Shen, Yanyan Ma, et al.
Computational Materials Science (2019) Vol. 170, pp. 109200-109200
Closed Access | Times Cited: 37

Showing 1-25 of 37 citing articles:

Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field
Tuan V. Vu, Nguyen N. Hieu, Huynh V. Phuc, et al.
Applied Surface Science (2019) Vol. 507, pp. 145036-145036
Closed Access | Times Cited: 166
Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures
Ruixia Wu, Hongmei Zhang, Huifang Ma, et al.
Chemical Reviews (2024) Vol. 124, Iss. 17, pp. 10112-10191
Closed Access | Times Cited: 18
Interlayer coupling and electric field controllable Schottky barriers and contact types in graphene/ PbI2 heterostructures
Chương V. Nguyen, M. Idrees, Huynh V. Phuc, et al.
Physical review. B./Physical review. B (2020) Vol. 101, Iss. 23
Closed Access | Times Cited: 93
Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures
Xin Wu, Xiyue Chen, Ruxue Yang, et al.
Small (2022) Vol. 18, Iss. 15
Closed Access | Times Cited: 49
Highly Sensitive Band Alignment of the Graphene/MoSi2N4 Heterojunction via an External Electric Field
Gang Yuan, Zhengwang Cheng, Yuehuan Cheng, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 6, pp. 2897-2905
Closed Access | Times Cited: 41
Computational analysis of starch for sustainable power generation towards integrated wearable IoT
Thanjan Shaji Bincy, Asokan Poorani Sathya Prasanna, A. Sakthi Balaji, et al.
Applied Energy (2024) Vol. 370, pp. 123590-123590
Closed Access | Times Cited: 12
Electric gating and interlayer coupling controllable electronic structure and Schottky contact of graphene/ BiI3 van der Waals heterostructure
Chương V. Nguyen
Physical review. B./Physical review. B (2021) Vol. 103, Iss. 11
Closed Access | Times Cited: 55
Band alignment and optical features in Janus-MoSeTe/X(OH)2 (X = Ca, Mg) van der Waals heterostructures
Dat D. Vo, Tuan V. Vu, Nguyen N. Hieu, et al.
Physical Chemistry Chemical Physics (2019) Vol. 21, Iss. 46, pp. 25849-25858
Closed Access | Times Cited: 43
2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain
Manish Kumar Mohanta, Abir De Sarkar
Applied Surface Science (2020) Vol. 540, pp. 148389-148389
Closed Access | Times Cited: 39
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
Xuefeng Lu, Lingxia Li, Xin Guo, et al.
Computational Materials Science (2021) Vol. 198, pp. 110677-110677
Closed Access | Times Cited: 26
First-principles studies on tuning the geometrical, electronical, and optical traits of 2D α-GeTe/Sb Van der waals heterostructure
A. Sakthi Balaji, R. Akash, Hariharan Rajalakshmi Mohanraj, et al.
Journal of Physics and Chemistry of Solids (2024) Vol. 190, pp. 112024-112024
Closed Access | Times Cited: 3
A facile method to synthesize two-dimensional CsPb2Br5 nano-/micro-sheets for high-performance solution-processed photodetectors
Ruonan Zhi, Jinming Hu, Shengyi Yang, et al.
Journal of Alloys and Compounds (2020) Vol. 824, pp. 153970-153970
Closed Access | Times Cited: 27
Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures
Tuan V. Vu, Tan Phat Dao, M. Idrees, et al.
Physical Chemistry Chemical Physics (2020) Vol. 22, Iss. 15, pp. 7952-7961
Closed Access | Times Cited: 27
First principles study on optoelectronic properties of energetically stable Si/InS van der Waals heterobilayers
R. Caglayan, Y. Mogulkoc, A. Mogulkoc, et al.
Journal of Materials Science (2020) Vol. 55, Iss. 31, pp. 15199-15212
Closed Access | Times Cited: 22
Effects of electric field and strain engineering on the electronic properties, band alignment and enhanced optical properties of ZnO/Janus ZrSSe heterostructures
Dat D. Vo, Tuan V. Vu, Thị Huyền Nguyễn, et al.
RSC Advances (2020) Vol. 10, Iss. 17, pp. 9824-9832
Open Access | Times Cited: 21
Zirconium Dichalcogenide-Based van der Waals Heterostructures for Efficient Schottky Barrier Solar Cells
Laxman Tatikondewar, Sudip Chakraborty, Rajeev Ahuja, et al.
ACS Applied Energy Materials (2024) Vol. 7, Iss. 12, pp. 5071-5080
Closed Access | Times Cited: 2
Computational investigations of the metal/semiconductor NbS2/Boron phosphide van der Waals heterostructure: Effects of the electric fields
Nguyen V. Vinh, Son‐Tung Nguyen, Khang D. Pham
Dalton Transactions (2024) Vol. 53, Iss. 31, pp. 13022-13029
Closed Access | Times Cited: 2
Tunable Schottky contact at the graphene/Janus SMoSiN2 interface for high-efficiency electronic devices
Son‐Tung Nguyen, Cuong Q. Nguyen, Yee Sin Ang, et al.
Journal of Physics D Applied Physics (2022) Vol. 56, Iss. 4, pp. 045306-045306
Closed Access | Times Cited: 9
Understanding the electronic properties, contact types and optical performances in graphene/InN heterostructure: Role of electric gating
Chương V. Nguyen, Tan Phat Dao, Ta T. Tho, et al.
Diamond and Related Materials (2020) Vol. 106, pp. 107851-107851
Closed Access | Times Cited: 14
Strengthening mechanisms of graphene in copper matrix nanocomposites: A molecular dynamics study
Yuhang Zhang, Qing An, Jiejie Li, et al.
Journal of Molecular Modeling (2020) Vol. 26, Iss. 12
Closed Access | Times Cited: 13
Modulation of Schottky barrier in XSi2N4/graphene (X = Mo and W) heterojunctions by biaxial strain
Qian Liang, Xiangyan Luo, Yixin Wang, et al.
Chinese Physics B (2022) Vol. 31, Iss. 8, pp. 087101-087101
Closed Access | Times Cited: 8
Theoretical prediction of a type-II BP/SiH heterostructure for high-efficiency electronic devices
Nguyen Dang Khang, Cuong Q. Nguyen, Chương V. Nguyen
Dalton Transactions (2023) Vol. 52, Iss. 7, pp. 2080-2086
Closed Access | Times Cited: 4
A universal substrate for the nanoscale investigation of two-dimensional materials
Tuan‐Hoang Tran, Raúl D. Rodriguez, Dmitry Cheshev, et al.
Applied Surface Science (2022) Vol. 604, pp. 154585-154585
Open Access | Times Cited: 7
Novel wide spectrum light absorber heterostructures based on hBN/In(Ga)Te
Andrijana Šolajić, Jelena Pešić
Journal of Physics Condensed Matter (2022) Vol. 34, Iss. 34, pp. 345301-345301
Open Access | Times Cited: 5
Schottky barrier modification of GaSSe/graphene heterojunctions based on density functional theory
Lingling Lv, Yanqing Shen, Yanyan Ma, et al.
Journal of Physics D Applied Physics (2021) Vol. 54, Iss. 15, pp. 155104-155104
Closed Access | Times Cited: 7
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