OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
NbS2/MoSi2P4 van der Waals Heterojunction: Flexibly tunable electrical contact properties and potential applications for Schottky junction devices
Zhanhai Li, Jiangchao Han, Shiqian Cao, et al.
Applied Surface Science (2023) Vol. 636, pp. 157766-157766
Closed Access | Times Cited: 15
Zhanhai Li, Jiangchao Han, Shiqian Cao, et al.
Applied Surface Science (2023) Vol. 636, pp. 157766-157766
Closed Access | Times Cited: 15
Showing 15 citing articles:
First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer Mo Si 2 N 4
Zhanhai Li, Jianing Han, Shengguo Cao, et al.
Physical Review Applied (2024) Vol. 21, Iss. 5
Closed Access | Times Cited: 20
Zhanhai Li, Jianing Han, Shengguo Cao, et al.
Physical Review Applied (2024) Vol. 21, Iss. 5
Closed Access | Times Cited: 20
Physical properties of monolayer Mn ( BiTeS ) 2
Zhanhai Li, Jianing Han, Shengguo Cao, et al.
Physical review. B./Physical review. B (2023) Vol. 108, Iss. 18
Closed Access | Times Cited: 25
Zhanhai Li, Jianing Han, Shengguo Cao, et al.
Physical review. B./Physical review. B (2023) Vol. 108, Iss. 18
Closed Access | Times Cited: 25
Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure
P. H. Nha, Chương V. Nguyen, Nguyen N. Hieu, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 4, pp. 1193-1201
Open Access | Times Cited: 10
P. H. Nha, Chương V. Nguyen, Nguyen N. Hieu, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 4, pp. 1193-1201
Open Access | Times Cited: 10
Geometrical stability, electrical contact and optical properties for ZrX2(X = Cl, Br, I) /Zr2Cl2 semiconductor-metal heterojunctions
Yu Yi, Zhanhai Li, Shengguo Cao, et al.
Applied Surface Science (2024) Vol. 682, pp. 161730-161730
Closed Access | Times Cited: 10
Yu Yi, Zhanhai Li, Shengguo Cao, et al.
Applied Surface Science (2024) Vol. 682, pp. 161730-161730
Closed Access | Times Cited: 10
The control of the contact properties in the ferroelectric heterojunction T-NbTe<sub>2</sub>/Ga<sub>2</sub>S<sub>3</sub>
Sun Zhi-Xuan, Zhao Chang-Song, Cheng Fang
Acta Physica Sinica (2025) Vol. 74, Iss. 10
Open Access
Sun Zhi-Xuan, Zhao Chang-Song, Cheng Fang
Acta Physica Sinica (2025) Vol. 74, Iss. 10
Open Access
Electrical contact between 2D material NbS2 and WSSe
Jingjun Chen, Zelong Ma, Danni Wang, et al.
Physica E Low-dimensional Systems and Nanostructures (2025), pp. 116179-116179
Closed Access
Jingjun Chen, Zelong Ma, Danni Wang, et al.
Physica E Low-dimensional Systems and Nanostructures (2025), pp. 116179-116179
Closed Access
Controllable electrical contact characteristics of graphene/Ga2X3 (X = S, Se) ferroelectric heterojunctions
X. Liu, Yuliang Mao
Applied Physics Letters (2024) Vol. 125, Iss. 4
Closed Access | Times Cited: 2
X. Liu, Yuliang Mao
Applied Physics Letters (2024) Vol. 125, Iss. 4
Closed Access | Times Cited: 2
Flexoelectric effects in a bent α − In 2 Se 3
Hongli Chen, Chen Hu, Li Chen, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 1
Closed Access | Times Cited: 1
Hongli Chen, Chen Hu, Li Chen, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 1
Closed Access | Times Cited: 1
Exploring the versatility in the MoSe2/WS2 heterostructures
Tuan V. Vu, Dat D. Vo, Cuong Q. Nguyen, et al.
Dalton Transactions (2024) Vol. 53, Iss. 48, pp. 19342-19350
Closed Access
Tuan V. Vu, Dat D. Vo, Cuong Q. Nguyen, et al.
Dalton Transactions (2024) Vol. 53, Iss. 48, pp. 19342-19350
Closed Access
Layer-dependent Schottky contact atTaX2–BY (X=S, Se, T; Y = P, As, Sb) van der Waals interfaces
INZMAM UL HAQ, Arij Mustaqeem, Basit Ali, et al.
Nanoscale Advances (2024)
Open Access
INZMAM UL HAQ, Arij Mustaqeem, Basit Ali, et al.
Nanoscale Advances (2024)
Open Access
PtSe2/MoSe2异质结非常规V-型能带对齐与物理场耦合下的稳定性
Xinyan Li, Zhanhai Li, Sheng-Guo CAO, et al.
Zhongguo kexue. Wulixue Lixue Tianwenxue (2024) Vol. 54, Iss. 12, pp. 126811-126811
Closed Access
Xinyan Li, Zhanhai Li, Sheng-Guo CAO, et al.
Zhongguo kexue. Wulixue Lixue Tianwenxue (2024) Vol. 54, Iss. 12, pp. 126811-126811
Closed Access
Negligible Influence of C-related Defect on the Barrier Properties of Ti3C2T2/SiC Contacts: A First-Principles Study
Liuqiang Gu, Lingqin Huang, Junqiang Wang, et al.
Journal of Alloys and Compounds (2024), pp. 177850-177850
Closed Access
Liuqiang Gu, Lingqin Huang, Junqiang Wang, et al.
Journal of Alloys and Compounds (2024), pp. 177850-177850
Closed Access
The device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors
Xingyi Tan, Qiang Li, Dahua Ren, et al.
Nanoscale (2023) Vol. 15, Iss. 48, pp. 19726-19734
Closed Access | Times Cited: 1
Xingyi Tan, Qiang Li, Dahua Ren, et al.
Nanoscale (2023) Vol. 15, Iss. 48, pp. 19726-19734
Closed Access | Times Cited: 1
Achieving Ohmic Contacts in NbS2/MoSe2 van der Waals Heterostructure: A First‐Principles Study
Nguyen Dang Khang, Cuong Q. Nguyen, Chương V. Nguyen
Advanced Theory and Simulations (2023) Vol. 7, Iss. 3
Closed Access | Times Cited: 1
Nguyen Dang Khang, Cuong Q. Nguyen, Chương V. Nguyen
Advanced Theory and Simulations (2023) Vol. 7, Iss. 3
Closed Access | Times Cited: 1
Electronic properties and modulation effects on edge-modified GeS<sub>2</sub> nanoribbons
Jinghui Li, Shengguo Cao, Jia-Ning Han, et al.
Acta Physica Sinica (2023) Vol. 73, Iss. 5, pp. 056102-056102
Open Access
Jinghui Li, Shengguo Cao, Jia-Ning Han, et al.
Acta Physica Sinica (2023) Vol. 73, Iss. 5, pp. 056102-056102
Open Access
