OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Showing 1-25 of 63 citing articles:

Stone–Wales Defect in Graphene
Santosh K. Tiwari, Sarvesh Kumar Pandey, Raunak Pandey, et al.
Small (2023) Vol. 19, Iss. 44
Open Access | Times Cited: 47

Tunable contact types of VSe2/BC6N van der Waals heterostructures via vertical strain and electric field
Zheng-Yong Chen, You Xie, Shaorong Li, et al.
Materials Science in Semiconductor Processing (2025) Vol. 192, pp. 109416-109416
Closed Access | Times Cited: 2

Interfacial hybridization of Janus MoSSe and BX (X = P, As) monolayers for ultrathin excitonic solar cells, nanopiezotronics and low-power memory devices
Manish Kumar Mohanta, Abir De Sarkar
Nanoscale (2020) Vol. 12, Iss. 44, pp. 22645-22657
Closed Access | Times Cited: 94

Highly Sensitive Band Alignment of the Graphene/MoSi2N4 Heterojunction via an External Electric Field
Gang Yuan, Zhengwang Cheng, Yuehuan Cheng, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 6, pp. 2897-2905
Closed Access | Times Cited: 41

Built-in electric fields and extra electric fields in the oxygen evolution reaction
Zihang Feng, fangyin lu, Qiming Hu, et al.
Journal of Materials Chemistry A (2024) Vol. 12, Iss. 29, pp. 18047-18070
Closed Access | Times Cited: 10

Effective modulation of ohmic contact and carrier concentration in a graphene- MgX ( X=S,Se ) van der Waals heterojunction with tunable band-gap opening via strain and electric field
Manish Kumar Mohanta, Anu Arora, Abir De Sarkar
Physical review. B./Physical review. B (2021) Vol. 104, Iss. 16
Closed Access | Times Cited: 45

Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field
Xinguo Ma, Huatin Bo, Xue‐Qing Gong, et al.
Applied Surface Science (2023) Vol. 615, pp. 156385-156385
Closed Access | Times Cited: 18

Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M = Cr, Mo, W) heterostructure: Insights from first-principles
Linwei Yao, Jiangni Yun, Peng Kang, et al.
Applied Surface Science (2024) Vol. 652, pp. 159363-159363
Closed Access | Times Cited: 7

2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain
Manish Kumar Mohanta, Abir De Sarkar
Applied Surface Science (2020) Vol. 540, pp. 148389-148389
Closed Access | Times Cited: 39

Strain engineering on the electronic properties and interface contact of graphene/GeN3 van der Waals heterostructure
Yu Shu, Kaijun He, Rui Xiong, et al.
Applied Surface Science (2022) Vol. 604, pp. 154540-154540
Closed Access | Times Cited: 25

Janus transition-metal dichalcogenides heterostructures for highly efficient excitonic solar cells
M. Bikerouin, M. Ballı
Applied Surface Science (2022) Vol. 598, pp. 153835-153835
Closed Access | Times Cited: 23

NbS2/MoSi2P4 van der Waals Heterojunction: Flexibly tunable electrical contact properties and potential applications for Schottky junction devices
Zhanhai Li, Jiangchao Han, Shiqian Cao, et al.
Applied Surface Science (2023) Vol. 636, pp. 157766-157766
Closed Access | Times Cited: 15

Two-dimensional ultrathin van der Waals heterostructures of indium selenide and boron monophosphide for superfast nanoelectronics, excitonic solar cells, and digital data storage devices
Manish Kumar Mohanta, Amal Kishore, Abir De Sarkar
Nanotechnology (2020) Vol. 31, Iss. 49, pp. 495208-495208
Closed Access | Times Cited: 34

Conflux of tunable Rashba effect and piezoelectricity in flexible magnesium monochalcogenide monolayers for next-generation spintronic devices
Manish Kumar Mohanta, Anu Arora, Abir De Sarkar
Nanoscale (2021) Vol. 13, Iss. 17, pp. 8210-8223
Closed Access | Times Cited: 28

Tunable properties of ZnSe/graphene heterostructure as a promising candidate for photo/electro-catalyst applications
Yue‐Fei Zhang, Jiemin Wei, Tianyun Liu, et al.
Applied Surface Science (2021) Vol. 574, pp. 151679-151679
Closed Access | Times Cited: 27

Graphene/MoSi2X4: A class of van der Waals heterojunctions with unique mechanical and optical properties and controllable electrical contacts
Zhanhai Li, Jiangchao Han, Shiqian Cao, et al.
Applied Surface Science (2022) Vol. 614, pp. 156095-156095
Closed Access | Times Cited: 22

Stable WSeTe/PtTe2 van der Waals heterojunction: Excellent mechanical, electronic, and optical properties and device applications
ChangSong Zhao, Zhanhai Li, Zhenhua Zhang
Applied Surface Science (2024) Vol. 672, pp. 160859-160859
Closed Access | Times Cited: 4

Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
Xuefeng Lu, Lingxia Li, Xin Guo, et al.
Computational Materials Science (2021) Vol. 198, pp. 110677-110677
Closed Access | Times Cited: 26

Tunable Schottky contact in graphene/InP3 van der Waals heterostructures
Dingbo Zhang, Yue Hu
Applied Surface Science (2021) Vol. 554, pp. 149608-149608
Closed Access | Times Cited: 25

Theoretical design of BAs/WX2 (X = S, Se) heterostructures for high-performance photovoltaic applications from DFT calculations
Yue Guan, Xiaodan Li, Qing‐Miao Hu, et al.
Applied Surface Science (2022) Vol. 599, pp. 153865-153865
Closed Access | Times Cited: 18

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices
Son‐Tung Nguyen, Cuong Q. Nguyen, Nguyen N. Hieu, et al.
Langmuir (2023) Vol. 39, Iss. 48, pp. 17251-17260
Closed Access | Times Cited: 10

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures
Xiangjiu Zhu, H. X. Jiang, Yukai Zhang, et al.
Molecules (2023) Vol. 28, Iss. 14, pp. 5607-5607
Open Access | Times Cited: 9

Atomistic manipulation of interfacial properties in HfN2/MoTe2 van der Waals heterostructure via strain and electric field for next generation multifunctional nanodevice and energy conversion
Manish Kumar Mohanta, Ashima Rawat, Abir De Sarkar
Applied Surface Science (2021) Vol. 568, pp. 150928-150928
Closed Access | Times Cited: 20

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction
Wenjing Zhang, Guoqiang Hao, Rui Zhang, et al.
Journal of Physics and Chemistry of Solids (2021) Vol. 157, pp. 110189-110189
Closed Access | Times Cited: 18

Page 1 - Next Page

Scroll to top