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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Recent progress in ferroelectric synapses and their applications
Shaoan Yan, Junyi Zang, Pei Xu, et al.
Science China Materials (2022) Vol. 66, Iss. 3, pp. 877-894
Open Access | Times Cited: 28

Showing 1-25 of 28 citing articles:

2D multifunctional devices: from material preparation to device fabrication and neuromorphic applications
Zhuohui Huang, Yanran Li, Yi Zhang, et al.
International Journal of Extreme Manufacturing (2024) Vol. 6, Iss. 3, pp. 032003-032003
Open Access | Times Cited: 20
Nanomaterials for Flexible Neuromorphics
Guanglong Ding, Hang Li, Jiyu Zhao, et al.
Chemical Reviews (2024) Vol. 124, Iss. 22, pp. 12738-12843
Closed Access | Times Cited: 8
Synapse with Diverse Plasticity in Ferroelectric BaTiO3 Thin Films for Neuromorphic Computing
Yi Xiao, Mengyuan Duan, Ang Li, et al.
The Journal of Physical Chemistry C (2024) Vol. 128, Iss. 5, pp. 2231-2239
Closed Access | Times Cited: 5
Charge-compensated co-doping stabilizes robust hafnium oxide ferroelectricity
Gang Li, Yulin Liu, Shaoan Yan, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 17, pp. 6257-6266
Closed Access | Times Cited: 5
Synaptic plasticity enhancement by supercritical fluid processed a-IGZO transistors for robust image recognition applications
Jo‐Lin Chen, Yu-Chuan Chiu, Tsung-Che Chiang, et al.
Applied Surface Science (2025), pp. 163028-163028
Closed Access
Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor
Yaqian Liu, Minrui Lian, Wei Chen, et al.
International Journal of Extreme Manufacturing (2024) Vol. 6, Iss. 2, pp. 022008-022008
Open Access | Times Cited: 4
Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization
Boyu Zuo, Xuhui Lou, Yu Chen, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 1
Closed Access
Artificial intelligence-driven phase stability evaluation and new dopants identification of hafnium oxide-based ferroelectric materials
Shaoan Yan, Pei Xu, Gang Li, et al.
npj Computational Materials (2025) Vol. 11, Iss. 1
Open Access
All electrical switching of 2D multiferroic heterostructure
Kian Ping Loh
Science China Materials (2025)
Closed Access
Unraveling the origins of ferroelectricity in doped hafnia through carrier-mediated phase transitions
Gang Li, Shaoan Yan, Yulin Liu, et al.
npj Computational Materials (2025) Vol. 11, Iss. 1
Open Access
Effects of different metal electrodes on the ferroelectric properties of HZO thin films
Pei Xu, Shaoan Yan, Yingfang Zhu, et al.
Journal of Materials Science Materials in Electronics (2023) Vol. 34, Iss. 28
Closed Access | Times Cited: 9
Recent advances in memristors based on two-dimensional ferroelectric materials
Wenbiao Niu, Guanglong Ding, Ziqi Jia, et al.
Frontiers of Physics (2023) Vol. 19, Iss. 1
Closed Access | Times Cited: 8
Deep-learning enabled atomic insights into the phase transitions and nanodomain topology of lead-free (K,Na)NbO3 ferroelectrics
Xu Zhang, Bei Li, Ji Jun Zou, et al.
Science China Materials (2024) Vol. 67, Iss. 9, pp. 3029-3038
Closed Access | Times Cited: 2
Influence of metal electrodes on the irradiation resistance of HZO ferroelectric thin film capacitors and mechanism analysis
Shaoan Yan, Junyi Zang, Yingfang Zhu, et al.
Journal of Alloys and Compounds (2023) Vol. 976, pp. 173175-173175
Closed Access | Times Cited: 5
Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli
Jie Lu, Zeyang Xiang, Kexiang Wang, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 8
Closed Access | Times Cited: 1
Impact of Ag concentration in As-S-Se chalcogenide on physical, topological and resistive switching properties
Kristina O. Čajko, Dalibor Sekulić, Roman Yatskiv, et al.
Journal of Non-Crystalline Solids (2023) Vol. 622, pp. 122663-122663
Closed Access | Times Cited: 2
Low-Voltage Synaptic Transistors Based on PrOx/ZrO2 Bilayer Dielectric for Neuromorphic Computing
Guangtan Miao, Limeng Chen, Ranran Ci, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 4, pp. 2702-2707
Closed Access
Universal insights into the origin of ferroelectricity in doped hafnia
Minghua Tang, Gang Li, Shaoan Yan, et al.
Research Square (Research Square) (2024)
Open Access
High-Performance Artificial Synapse Developed by HZO on (110) NSTO
Liang Tian, Mengshuang Chi, Yilin Zhao, et al.
ACS Applied Nano Materials (2024) Vol. 7, Iss. 16, pp. 19006-19013
Closed Access
Simulation of synaptic properties of ferroelectric memory capacitors and neural network applications
Shikai Liu, Xingyu Li, Yingfang Zhu, et al.
Engineering Research Express (2024) Vol. 6, Iss. 3, pp. 035347-035347
Closed Access
In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity
Shikai Liu, Xingyu Li, Gang Li, et al.
Coatings (2024) Vol. 14, Iss. 9, pp. 1121-1121
Open Access
Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence
Shaoan Yan, Peilong Xu, Gang Li, et al.
Journal of Materiomics (2024), pp. 100968-100968
Open Access
Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition method
Woo-Hyun Park, Yongjin Park, Sungjun Kim
The Journal of Chemical Physics (2024) Vol. 161, Iss. 23
Closed Access
Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor
Hongbo Li, Jianqi Zhang, Chongyong Guo, et al.
Semiconductor Science and Technology (2024) Vol. 39, Iss. 10, pp. 105012-105012
Closed Access
Ferroelectric Domains Engineering in 2D Van Der Waals Ferroelectric α‑In2Se3 Via Flexoelectric Effect
Qinming He, Bin Jiang, Jiayu Ma, et al.
Small Methods (2024)
Open Access
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