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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Improving Electrical Stability of a-InGaZnO Thin-Film Transistors with Thermally Deposited Self-Assembled Monolayers
Mingyu Kim, Seong‐Yong Cho, Youn‐Seob Shin, et al.
Electronic Materials Letters (2020) Vol. 16, Iss. 5, pp. 451-456
Closed Access | Times Cited: 12

Showing 12 citing articles:

Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
Seongjae Kim, Hocheon Yoo
Micromachines (2021) Vol. 12, Iss. 5, pp. 565-565
Open Access | Times Cited: 31
Binary solvent engineering for small-molecular organic semiconductor crystallization
Zhengran He, Ziyang Zhang, Kyeiwaa Asare‐Yeboah, et al.
Materials Advances (2023) Vol. 4, Iss. 3, pp. 769-786
Open Access | Times Cited: 11
Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers
Hyun-Min Ahn, Young-Ha Kwon, Nak‐Jin Seong, et al.
Electronic Materials Letters (2022) Vol. 18, Iss. 3, pp. 294-303
Closed Access | Times Cited: 18
Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps
Se-Na Choi, Sung‐Min Yoon
Electronic Materials Letters (2021) Vol. 17, Iss. 6, pp. 485-492
Closed Access | Times Cited: 21
A Green Binary Solvent Method to Control Organic Semiconductor Crystallization
Li Sun, Tianyu Li, Jiajian Zhou, et al.
ChemistrySelect (2023) Vol. 8, Iss. 1
Closed Access | Times Cited: 4
Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser
Fei Shan, Jae‐Yun Lee, Han-Lin Zhao, et al.
Electronic Materials Letters (2021) Vol. 17, Iss. 5, pp. 451-458
Closed Access | Times Cited: 9
Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition
Shin-Ho Noh, Hyoeun Kim, Young-Ha Kwon, et al.
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2022) Vol. 40, Iss. 4
Closed Access | Times Cited: 4
P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display
Chuanbao Luo, Jiangbo Yao, Wei Ding, et al.
SID Symposium Digest of Technical Papers (2024) Vol. 55, Iss. 1, pp. 1431-1433
Closed Access
Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method
W.I. Lee, Jaeho Lee, Amarja Katware, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 46, pp. 63778-63785
Closed Access
Surface properties of an InGaZnO4 layer with a monolayer formed using a phosphonic acid: wettability, work function, and thermal stability
Y Kitano, Yoshiaki Hattori, M. Kitamura
Japanese Journal of Applied Physics (2023) Vol. 63, Iss. 1, pp. 01SP32-01SP32
Closed Access | Times Cited: 1
P‐1.2: Improvement of Mobility and Reliability of a‐IGZO TFTs by Dual‐Gate Driving
Chuanbao Luo, Kai Zhou, Xiujuan Xian, et al.
SID Symposium Digest of Technical Papers (2022) Vol. 53, Iss. S1, pp. 575-577
Closed Access | Times Cited: 1
Metal Oxide Semiconductors for Transistors
Zhigang Zang, Wensi Cai, Yong Zhou
(2023), pp. 67-114
Closed Access
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