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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

From lab to fab: path forward for 2D material electronics
Hongkai Ning, Zhihao Yu, Taotao Li, et al.
Science China Information Sciences (2023) Vol. 66, Iss. 6
Open Access | Times Cited: 18

Showing 18 citing articles:

Two-dimensional materials for future information technology: status and prospects
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 26
Large-Area Epitaxial Growth of Transition Metal Dichalcogenides
Guodong Xue, Biao Qin, Chaojie Ma, et al.
Chemical Reviews (2024) Vol. 124, Iss. 17, pp. 9785-9865
Closed Access | Times Cited: 9
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
Jing Chen, Mingyuan Sun, Zhenhua Wang, et al.
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 4
An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors
Hongkai Ning, Hengdi Wen, Yuan Meng, et al.
Nature Electronics (2025)
Closed Access
A review of hafnium-based ferroelectrics for advanced computing
Xiangdong Xu, Z. Luo, Huabin Sun, et al.
Solid-State Electronics (2025), pp. 109053-109053
Closed Access
Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe2 membranes
Bo Xu, Zejuan Zhang, Jiaze Qin, et al.
Microsystems & Nanoengineering (2025) Vol. 11, Iss. 1
Open Access
Precise p‐Type Substitutional Doping Enables WS2 p‐n Anti‐Ambipolar Homojunction Phototransistor Arrays
Boxiang Gao, Yan Yan, Shuai Zhang, et al.
Advanced Functional Materials (2025)
Closed Access
The role of buffer layer in epitaxial growth of TMDCs
Dechun Zhou, Wenjin Gao, Andrew T. S. Wee, et al.
Nano Today (2025) Vol. 62, pp. 102718-102718
Closed Access
Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide
Jieyuan Liang, Zixing Zou, Junwu Liang, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 5
Closed Access | Times Cited: 2
超高开态电流的二维MoS2弹道晶体管
英根 李, Zongmeng Yang, Qiuhui Li, et al.
Science China Materials (2024) Vol. 67, Iss. 10, pp. 3083-3086
Closed Access | Times Cited: 2
Metal oxide ion gated transistors based sensors
Yang Li, Yu Yao, LeLe Wang, et al.
Science China Technological Sciences (2024) Vol. 67, Iss. 4, pp. 1040-1060
Closed Access | Times Cited: 1
Progress on the program of Si-compatible two-dimensional semiconductor materials and devices
Mingsheng Xu, Yuwei Wang, Ji‐Wei Liu, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Closed Access | Times Cited: 1
A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts
Chi Zhang, Jing Ning, Boyu Wang, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 3
Open Access | Times Cited: 1
Stable α-CsPbI3 with extremely red emission for expanding the color gamut
Yong Zhang, Xin Wei, Lei Gao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 5
Closed Access
Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Zheng Bian, Feng Tian, Zongwen Li, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Closed Access
Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits
Liang Meng, Han Yan, Nasrullah Wazir, et al.
Nanomaterials (2024) Vol. 14, Iss. 17, pp. 1408-1408
Open Access
Physical origin of planar linear dichroism in van der Waals semiconductors using main group elements
Qiang Gao, Yali Yu, Kaiyao Xin, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 12
Closed Access
Electronic Properties and Ballistic Transport Performances of 2D GaO: A DFT-NEGF Study
Jingwen Zhang, Yurong Qin, Wenhan Zhou, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 10, pp. 5598-5605
Closed Access | Times Cited: 1
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