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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives
Matteo Buffolo, Alessandro Caria, Francesco Piva, et al.
physica status solidi (a) (2022) Vol. 219, Iss. 8
Closed Access | Times Cited: 61

Showing 1-25 of 61 citing articles:

Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
Nicola Roccato, Francesco Piva, Carlo De Santi, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 16
Closed Access | Times Cited: 21
The future of the technology-based manufacturing in the European Union
A.K. Mallik
Results in Engineering (2023) Vol. 19, pp. 101356-101356
Open Access | Times Cited: 19
Potential and perspectives of halide perovskites in light emitting devices
Khan Lê, Niusha Heshmati, Sanjay Mathur
Nano Convergence (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 17
A Review of Diamond Materials and Applications in Power Semiconductor Devices
Feiyang Zhao, Yongjie He, Bin Huang, et al.
Materials (2024) Vol. 17, Iss. 14, pp. 3437-3437
Open Access | Times Cited: 6
Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs
Benjamin C. Letson, John Conklin, Peter Wass, et al.
ECS Journal of Solid State Science and Technology (2023) Vol. 12, Iss. 6, pp. 066002-066002
Open Access | Times Cited: 14
Advanced Defect Spectroscopy in Wide Bandgap Semicondutors: Review and Recent Results
Manuel Fregolent, Francesco Piva, Matteo Buffolo, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 43, pp. 433002-433002
Open Access | Times Cited: 5
Internal piezoelectric field and Auger recombination in InGaN/GaN quantum wells: impact on device performance
D. M. Samosvat, A. A. Karpova, G. G. Zegrya
Applied Physics A (2025) Vol. 131, Iss. 2
Closed Access
Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate
Haidong Yuan, Liwei Wang, Jiaqi Guo, et al.
Advanced Materials Interfaces (2025)
Open Access
Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures
Alessandro Caria, Riccardo Fraccaroli, G. Pierobon, et al.
Microelectronics Reliability (2025) Vol. 168, pp. 115634-115634
Open Access
Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
Katrin Pingen, Niklas Wolff, A. Hinz, et al.
Applied Surface Science Advances (2025) Vol. 26, pp. 100722-100722
Open Access
Carbon‐Related Trap Dynamics in Semi‐Insulating Buffer Layer of GaN‐on‐Si Substrate
Ryoma Kaneko, Jumpei Tajima, Akira Yoshioka, et al.
physica status solidi (a) (2025)
Closed Access
Role of micro-Raman technique in material characterization of GaN wide bandgap semiconductor: Review
P. Atheek, P.V.A. Padmanabhan, S. Munawar Basha, et al.
Progress in Crystal Growth and Characterization of Materials (2025) Vol. 71, Iss. 2, pp. 100665-100665
Closed Access
A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications
Kaustab Ghosh, Vigneshwaran Mani
Crystal Research and Technology (2024) Vol. 59, Iss. 7
Closed Access | Times Cited: 3
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
Francesco Piva, Marco Pilati, Matteo Buffolo, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 18
Open Access | Times Cited: 8
Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes
Alexander Herzog, Simon Benkner, Babak Zandi, et al.
IEEE Access (2023) Vol. 11, pp. 19928-19940
Open Access | Times Cited: 7
The GaN(0001) yellow-luminescence-related surface state and its interaction with air
Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker, et al.
Surfaces and Interfaces (2023) Vol. 38, pp. 102834-102834
Open Access | Times Cited: 7
Impact of Carbon Doping on Vertical Leakage Current in AlGaN‐Based Buffer Layer Grown on Silicon Substrate
Ryoma Kaneko, Hisashi Yoshida, Akira Yoshioka, et al.
physica status solidi (a) (2024) Vol. 221, Iss. 21
Closed Access | Times Cited: 2
III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers
Katrin Pingen, Niklas Wolff, Zahra Mohammadian, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 26, pp. 34294-34302
Open Access | Times Cited: 2
Charge Traps in Wide-Bandgap Semiconductors for Power Electronics Applications
Lee Kean Chuan, Martin Weis
Inorganics (2024) Vol. 12, Iss. 10, pp. 257-257
Open Access | Times Cited: 2
Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells
Marco Nicoletto, Alessandro Caria, Carlo De Santi, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 3, pp. 1115-1120
Closed Access | Times Cited: 6
Phonon vortices at heavy impurities in two-dimensional materials
De-Liang Bao, Mingquan Xu, Aowen Li, et al.
Nanoscale Horizons (2023) Vol. 9, Iss. 2, pp. 248-253
Open Access | Times Cited: 6
Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes
Nicola Trivellin, Francesco Piva, Davide Fiorimonte, et al.
physica status solidi (a) (2023) Vol. 220, Iss. 16
Open Access | Times Cited: 5
Structural Engineering in a Microscale Laser Diode with InGaN Tunnel-Junction Nanorods
Sung‐Un Kim, Dae‐Young Um, Jeong‐Kyun Oh, et al.
ACS Photonics (2023)
Closed Access | Times Cited: 4
Spatially resolved degradation effects in UVB LEDs stressed by constant current operation
Jan Ruschel, Jens W. Tomm, Johannes Glaab, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 13
Open Access | Times Cited: 4
Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon
Yingzhe Wang, Xuefeng Zheng, Tian Zhu, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 14
Closed Access | Times Cited: 4
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