
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Artificial Indium‐Tin‐Oxide Synaptic Transistor by Inkjet Printing Using Solution‐Processed ZrOx Gate Dielectric
Youn Goo Kim, Dongxu Lv, Jingsong Huang, et al.
physica status solidi (a) (2020) Vol. 217, Iss. 19
Closed Access | Times Cited: 11
Youn Goo Kim, Dongxu Lv, Jingsong Huang, et al.
physica status solidi (a) (2020) Vol. 217, Iss. 19
Closed Access | Times Cited: 11
Showing 11 citing articles:
Electrolyte-gated neuromorphic transistors for brain-like dynamic computing
Yongli He, Shanshan Jiang, Chunsheng Chen, et al.
Journal of Applied Physics (2021) Vol. 130, Iss. 19
Open Access | Times Cited: 40
Yongli He, Shanshan Jiang, Chunsheng Chen, et al.
Journal of Applied Physics (2021) Vol. 130, Iss. 19
Open Access | Times Cited: 40
Artificial Synaptic Properties in Oxygen-Based Electrochemical Random-Access Memory with CeO2 Nanoparticle Assembly as Gate Insulator for Neuromorphic Computing
Boyoung Jeong, Taeyun Noh, Jimin Han, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
Boyoung Jeong, Taeyun Noh, Jimin Han, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels
Siwei Wang, Xuemeng Hu, Baifan Qian, et al.
Advanced Electronic Materials (2025)
Open Access
Siwei Wang, Xuemeng Hu, Baifan Qian, et al.
Advanced Electronic Materials (2025)
Open Access
Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics
Taebin Lim, Suhui Lee, Jiseob Lee, et al.
Advanced Functional Materials (2022) Vol. 33, Iss. 8
Closed Access | Times Cited: 17
Taebin Lim, Suhui Lee, Jiseob Lee, et al.
Advanced Functional Materials (2022) Vol. 33, Iss. 8
Closed Access | Times Cited: 17
Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters
Sang-Joon Park, Tae‐Jun Ha
Journal of Alloys and Compounds (2022) Vol. 912, pp. 165228-165228
Closed Access | Times Cited: 13
Sang-Joon Park, Tae‐Jun Ha
Journal of Alloys and Compounds (2022) Vol. 912, pp. 165228-165228
Closed Access | Times Cited: 13
Printing flexible thin-film transistors
Gengming Zhang, Yunchao Xu, Mustafa Haider, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 3
Open Access | Times Cited: 7
Gengming Zhang, Yunchao Xu, Mustafa Haider, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 3
Open Access | Times Cited: 7
Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High-k Oxide Composite Dielectric
Yushan Li, Wei Cai, R. Tao, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19271-19282
Open Access | Times Cited: 2
Yushan Li, Wei Cai, R. Tao, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19271-19282
Open Access | Times Cited: 2
Perspective on oxide-based three-terminal artificial synapses in physical neural networks
Kuan‐Ting Chen, Jen‐Sue Chen
Applied Physics Letters (2022) Vol. 121, Iss. 19
Closed Access | Times Cited: 9
Kuan‐Ting Chen, Jen‐Sue Chen
Applied Physics Letters (2022) Vol. 121, Iss. 19
Closed Access | Times Cited: 9
Artificial synapses based on boron ions-modulated transistors for neuromorphic applications
Guangtan Miao, Qingliang Liu, Yepeng Shi, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 20
Closed Access | Times Cited: 1
Guangtan Miao, Qingliang Liu, Yepeng Shi, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 20
Closed Access | Times Cited: 1
Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor
Yeoungjin Chang, Ravindra Naik Bukke, Jinbaek Bae, et al.
Nanomaterials (2023) Vol. 13, Iss. 17, pp. 2410-2410
Open Access | Times Cited: 3
Yeoungjin Chang, Ravindra Naik Bukke, Jinbaek Bae, et al.
Nanomaterials (2023) Vol. 13, Iss. 17, pp. 2410-2410
Open Access | Times Cited: 3
Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors
Sami Bolat, Evangelos Agiannis, Shih‐Chi Yang, et al.
Frontiers in Electronics (2022) Vol. 2
Open Access | Times Cited: 3
Sami Bolat, Evangelos Agiannis, Shih‐Chi Yang, et al.
Frontiers in Electronics (2022) Vol. 2
Open Access | Times Cited: 3
Linearity Improvement of TiOx‐Based Flexible Memristor Synapses Even Under Bending
Hongjia Song, Shimin Hu, Yingdong Liu, et al.
physica status solidi (a) (2024) Vol. 221, Iss. 6
Closed Access
Hongjia Song, Shimin Hu, Yingdong Liu, et al.
physica status solidi (a) (2024) Vol. 221, Iss. 6
Closed Access