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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

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Showing 19 citing articles:

Unraveling the Role of Interfacial Interactions in Electrical Contacts of Atomically Thin Transition-Metal Dichalcogenides
Meiying Gong, Dabao Xie, Yiqian Tian, et al.
ACS Nano (2025)
Closed Access
Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts
Wen Ai, Yongfei Shi, Xiaohui Hu, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 10, pp. 5606-5613
Closed Access | Times Cited: 14
Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides
Jong Hun Kim, Ha-Yeong Sung, Gwan‐Hyoung Lee
Small Science (2023) Vol. 4, Iss. 1
Open Access | Times Cited: 14
Identification of Active Sites for Thermal Oxidation-Induced Doping and Etching in CVD-Grown Monolayer Transition Metal Dichalcogenides
Linghui Fang, Liqin Su, Haibiao Guan, et al.
ACS Applied Nano Materials (2024) Vol. 7, Iss. 5, pp. 5063-5073
Closed Access | Times Cited: 4
High‐Throughput Computational Screening of All‐MXene Metal–Semiconductor Junctions for Schottky‐Barrier‐Free Contacts with Weak Fermi‐Level Pinning
Jie Yan, Dan Cao, Meng Li, et al.
Small (2023) Vol. 19, Iss. 44
Closed Access | Times Cited: 11
Band Alignment Engineering in 2D Ferroelectric Van der Waals Heterostructures for All‐In‐One Optoelectronic Architecture
Yanan Lu, Dabao Xie, Congmin Zhang, et al.
Advanced Electronic Materials (2024)
Open Access | Times Cited: 3
Barrier-free semimetallic PtSe2 contact formation in two-dimensional PtSe2/PtSe2 homostructure for high-performance field-effect transistors
YunHo Kim, Min‐Sung Kang, Jae Won Choi, et al.
Applied Surface Science (2023) Vol. 638, pp. 158061-158061
Closed Access | Times Cited: 9
Expanding the landscape of anti-MoS2 monolayers: computational exploration of stability and multifaceted properties across the periodic table
Fengyu Li, Yu Liu, Linke Yu, et al.
Science China Materials (2024) Vol. 67, Iss. 4, pp. 1260-1272
Open Access | Times Cited: 2
Strongly Coupled NiMo@Alloy‐LDH Interfaces with Low‐Barrier Schottky Junctions for Oxygen Evolution Reaction
Chaojie Yin, Fanghe Zhou, Jiang Wu, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 51
Closed Access | Times Cited: 2
Ohmic MXene Contacts for Symmetric p- and n-type Monolayer WSe2 Schottky Barrier Field-Effect Transistors
Hong Li, Xinqi Yuan, Jingzhen Li, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 6, pp. 4187-4193
Closed Access | Times Cited: 1
Thickness-dependent carrier polarity of MoTe2 transistors with NiTe2 semimetal contacts
Boyuan Di, Xiaokun Wen, Wenyu Lei, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 19
Closed Access | Times Cited: 3
Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures
Yulun Liu, Yaojie Zhu, Zuowei Yan, et al.
Frontiers of Chemical Science and Engineering (2023) Vol. 18, Iss. 2
Closed Access | Times Cited: 3
Computational Screening of Highly Stable Semiconducting MXenes with Ultrahigh Carrier Mobilities for Optoelectronic Applications
Xue Yang, Dan Cao, Jie Yan, et al.
physica status solidi (RRL) - Rapid Research Letters (2023) Vol. 17, Iss. 9
Closed Access | Times Cited: 2
Metal contacts and Schottky barrier heights at boron arsenide interfaces: A first-principles study
Zhiyong Fu, Hailing Guo, Xiting Wang, et al.
Journal of Applied Physics (2023) Vol. 134, Iss. 11
Closed Access | Times Cited: 2
First‐Principles Study of Schottky Barrier Heights on Metal/4H‐SiC Polar Interfaces
Ji Wen, Xi Tang, Ruyue Cao, et al.
physica status solidi (b) (2024) Vol. 261, Iss. 5
Closed Access
Dopant-Mediated Carrier Tunneling in Short-Channel Two-Dimensional Transistors
Yue Lu, Chenyu Li, Shenbo Yang, et al.
Materials Chemistry Frontiers (2024) Vol. 8, Iss. 20, pp. 3300-3307
Open Access
Mechanistic insights into the electrical properties of Ti3C2T2/WS2 (T = F, O, OH) interfaces tuned by functional groups
Jinyan Guo, Yan Liu, Yang Ge, et al.
Computational Materials Science (2024) Vol. 246, pp. 113488-113488
Closed Access
Self-powered photodetector with GeSe/WS2/MoS2 van der Waals heterojunctions
Zhang Yong-zhi, Xunjun He
Sensors and Actuators A Physical (2024), pp. 116080-116080
Closed Access
Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts
Liujian Qi, Mengqi Che, Mingxiu Liu, et al.
Nanoscale (2023) Vol. 15, Iss. 32, pp. 13252-13261
Open Access | Times Cited: 1
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