OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses
Tomoki Wada, Daiki Nishioka, Wataru Namiki, et al.
Advanced Intelligent Systems (2023) Vol. 5, Iss. 9
Open Access | Times Cited: 20

Showing 20 citing articles:

Few- and single-molecule reservoir computing experimentally demonstrated with surface-enhanced Raman scattering and ion gating
Daiki Nishioka, Yoshitaka Shingaya, Takashi Tsuchiya, et al.
Science Advances (2024) Vol. 10, Iss. 9
Open Access | Times Cited: 12

Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism
Wataru Namiki, Daiki Nishioka, Takashi Tsuchiya, et al.
Nano Letters (2024) Vol. 24, Iss. 15, pp. 4383-4392
Open Access | Times Cited: 7

Investigation of electric double layer effects at Li3PO4 Li+ solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal
Kaoru Shibata, Wataru Namiki, Daiki Nishioka, et al.
Japanese Journal of Applied Physics (2025) Vol. 64, Iss. 2, pp. 02SP04-02SP04
Closed Access

Experimental Demonstration of High‐Performance Physical Reservoir Computing with Nonlinear Interfered Spin Wave Multidetection
Wataru Namiki, Daiki Nishioka, Yu Yamaguchi, et al.
Advanced Intelligent Systems (2023) Vol. 5, Iss. 12
Open Access | Times Cited: 18

Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing
Makoto Takayanagi, Daiki Nishioka, Takashi Tsuchiya, et al.
Materials Today Advances (2023) Vol. 18, pp. 100393-100393
Open Access | Times Cited: 13

Redox-based ion-gating reservoir consisting of (104) oriented LiCoO2 film, assisted by physical masking
Kaoru Shibata, Daiki Nishioka, Wataru Namiki, et al.
Scientific Reports (2023) Vol. 13, Iss. 1
Open Access | Times Cited: 11

Oxide‐Based Electrolyte‐Gated Transistors with Stable and Tunable Relaxation Responses for Deep Time‐Delayed Reservoir Computing
Renrui Fang, Shaocong Wang, Woyu Zhang, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 4
Open Access | Times Cited: 3

Inverted input method for computing performance enhancement of the ion-gating reservoir
Yu Yamaguchi, Daiki Nishioka, Wataru Namiki, et al.
Applied Physics Express (2024) Vol. 17, Iss. 2, pp. 024501-024501
Open Access | Times Cited: 3

Enhanced synaptic characteristics of H x WO3-based neuromorphic devices, achieved by current pulse control, for artificial neural networks
Daiki Nishioka, Takashi Tsuchiya, Tohru Higuchi, et al.
Neuromorphic Computing and Engineering (2023) Vol. 3, Iss. 3, pp. 034008-034008
Open Access | Times Cited: 8

Opto-magnonic reservoir computing coupling nonlinear interfered spin wave and visible light switching
Wataru Namiki, Yu Yamaguchi, Daiki Nishioka, et al.
Materials Today Physics (2024) Vol. 45, pp. 101465-101465
Open Access | Times Cited: 2

A high-performance deep reservoir computer experimentally demonstrated with ion-gating reservoirs
Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, et al.
Communications Engineering (2024) Vol. 3, Iss. 1
Open Access | Times Cited: 2

Fast physical reservoir computing, achieved with nonlinear interfered spin waves
Wataru Namiki, Daiki Nishioka, Takashi Tsuchiya, et al.
Neuromorphic Computing and Engineering (2024) Vol. 4, Iss. 2, pp. 024015-024015
Open Access | Times Cited: 2

Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing
Wataru Namiki, Takashi Tsuchiya, Daiki Nishioka, et al.
Japanese Journal of Applied Physics (2024) Vol. 63, Iss. 3, pp. 03SP13-03SP13
Open Access | Times Cited: 1

Improved dynamic characteristics of oxide electrolyte-gated transistor for time-delayed reservoir computing
Renrui Fang, Xufan Li, Kuan Ren, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 5
Closed Access | Times Cited: 1

Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing
Takashi Tsuchiya, Makoto Takayanagi, Daiki Nishioka, et al.
Journal of Solid State Electrochemistry (2024) Vol. 28, Iss. 12, pp. 4367-4376
Closed Access | Times Cited: 1

Using the Transversal Admittance to Understand Organic Electrochemical Transistors
Juan Bisquert, Scott T. Keene
Advanced Science (2024)
Open Access | Times Cited: 1

Bio‐Plausible Multimodal Learning with Emerging Neuromorphic Devices
Haonan Sun, Haoxiang Tian, Yihao Hu, et al.
Advanced Science (2024)
Open Access

Electric Double-Layer Effect in Solid State Ionics-Based Transistors and the Application to Neuromorphic Computing
Takashi Tsuchiya, Makoto Takayanagi, Daiki Nishioka, et al.
˜The œMaterials Research Society series (2024), pp. 513-523
Closed Access

Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms
Takashi Tsuchiya, Daiki Nishioka, Wataru Namiki, et al.
Advanced Electronic Materials (2024)
Closed Access

A time-delayed physical reservoir with various time constants
Yutaro Yamazaki, Kentaro Kinoshita
Applied Physics Express (2024) Vol. 17, Iss. 2, pp. 027001-027001
Open Access

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