OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer
Yongkai Liu, Tianyu Wang, Zhenhai Li, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 9
Yongkai Liu, Tianyu Wang, Zhenhai Li, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 9
Showing 9 citing articles:
Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films
Kangli Xu, Tianyu Wang, Yongkai Liu, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 2, pp. 1055-1062
Closed Access | Times Cited: 3
Kangli Xu, Tianyu Wang, Yongkai Liu, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 2, pp. 1055-1062
Closed Access | Times Cited: 3
Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications
Yongkai Liu, Tianyu Wang, Kang Xu, et al.
Materials Horizons (2023) Vol. 11, Iss. 2, pp. 490-498
Closed Access | Times Cited: 7
Yongkai Liu, Tianyu Wang, Kang Xu, et al.
Materials Horizons (2023) Vol. 11, Iss. 2, pp. 490-498
Closed Access | Times Cited: 7
Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles Under Low-Voltage Operation
Yin-Chi Liu, Ji-Ning Yang, Yuchun Li, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 388-391
Closed Access | Times Cited: 5
Yin-Chi Liu, Ji-Ning Yang, Yuchun Li, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 388-391
Closed Access | Times Cited: 5
Accurate compact nonlinear dynamical model for a volatile ferroelectric ZrO2 capacitor
Shiva Asapu, Taehwan Moon, K. Mahalingam, et al.
Deleted Journal (2024) Vol. 1, Iss. 1
Open Access | Times Cited: 1
Shiva Asapu, Taehwan Moon, K. Mahalingam, et al.
Deleted Journal (2024) Vol. 1, Iss. 1
Open Access | Times Cited: 1
Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing
Shuxian Lyu, Wei Wei, Yang Yang, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 348-351
Closed Access | Times Cited: 2
Shuxian Lyu, Wei Wei, Yang Yang, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 348-351
Closed Access | Times Cited: 2
Optimal Process Design for Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance
Hui Wang, Jiabin Qi, Xinyu Xie, et al.
Electronics (2024) Vol. 13, Iss. 15, pp. 2895-2895
Open Access
Hui Wang, Jiabin Qi, Xinyu Xie, et al.
Electronics (2024) Vol. 13, Iss. 15, pp. 2895-2895
Open Access
Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2 interfacial layer
Wei Zhang, Yuxuan Shi, Bowen Zhang, et al.
Nanotechnology (2024) Vol. 35, Iss. 43, pp. 435703-435703
Closed Access
Wei Zhang, Yuxuan Shi, Bowen Zhang, et al.
Nanotechnology (2024) Vol. 35, Iss. 43, pp. 435703-435703
Closed Access
Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Zhenhai Li, Sen Tang, Tianyu Wang, et al.
Advanced Science (2024)
Closed Access
Zhenhai Li, Sen Tang, Tianyu Wang, et al.
Advanced Science (2024)
Closed Access
Effect of Doping Concentration on Intrinsic Ferroelectric Properties of HfLaO-Based Ferroelectric Memory
Yongkai Liu, Tianyu Wang, Kangli Xu, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 376-379
Closed Access
Yongkai Liu, Tianyu Wang, Kangli Xu, et al.
IEEE Electron Device Letters (2023) Vol. 45, Iss. 3, pp. 376-379
Closed Access
